Semiconductor modules and methods of formation thereof

1. A method of forming a semiconductor module, the method comprising:

providing a semiconductor package comprising a semiconductor die disposed in a first encapsulant;

forming an opening in the first encapsulant of the semiconductor package to expose a plurality of contact metallization of the semiconductor die;

forming contact pads over the plurality of contact metallization;

placing a semiconductor component within the opening; and

attaching the semiconductor component to the contact pads.

2. The method of claim 1 , further comprising forming a second encapsulant over the semiconductor component.

3. The method of claim 1 , wherein forming contact pads over the plurality of contact metallization comprises performing an electrochemical deposition process.

4. The method of claim 1 , wherein attaching the semiconductor component to the contact pads comprises electrically coupling the semiconductor component using a bonding process.

5. The method of claim 1 , further comprising applying a second encapsulant after attaching the semiconductor component to the contact pads.

6. The method of claim 1 , wherein the semiconductor die comprises a power semiconductor die.

7. The method of claim 1 , wherein the semiconductor component comprises a semiconductor die packaged within an encapsulant.

8. The method of claim 1 , wherein the semiconductor component comprises a semiconductor die after wafer singulation.

9. A method of forming a semiconductor module, the method comprising:

providing a semiconductor package comprising:

a plurality of leads;

a first semiconductor die supported by a die paddle and disposed in a first encapsulant,

a clip coupling a region to a lead of the plurality of leads of the semiconductor package;

forming an opening in the first encapsulant of the semiconductor package to expose a portion of a top surface of the clip;

placing a semiconductor component within the opening; and

attaching the semiconductor component to the exposed portion of the top surface of the clip.

10. The method of claim 9 , further comprising forming a second encapsulant over the semiconductor component.

11. The method of claim 9 , further comprising depositing a contact pad by performing an electrochemical deposition process after exposing the portion of the top surface of the clip.

12. The method of claim 9 , further comprising applying a second encapsulant after attaching the semiconductor component.

13. The method of claim 9 , wherein the semiconductor component comprises a semiconductor die packaged within an encapsulant.

14. The method of claim 9 , wherein the semiconductor component comprises a semiconductor die after wafer singulation.

15. A method of forming a semiconductor module, the method comprising:

providing a first semiconductor package comprising a first semiconductor die disposed in a first encapsulant;

forming an opening in the first encapsulant; and

providing a second semiconductor package comprising a second semiconductor die disposed in a second encapsulant, wherein the second semiconductor package is disposed at least partially within the opening in the first encapsulant.

16. The method of claim 15 , further comprising:

forming a third encapsulant over the second semiconductor package.

17. The method of claim 15 , wherein the first and the second semiconductor dies comprise discrete power semiconductors.

18. The method of claim 15 , wherein the first semiconductor package comprises a clip coupling a contact pad on the first semiconductor die to a lead, wherein the second semiconductor package comprises a contact pad coupled to a portion of the clip.

19. The method of claim 15 , wherein the first semiconductor die comprises a contact pad, wherein the second semiconductor package comprises a contact pad coupled to the contact pad of the first semiconductor die.

20. The method of claim 15 , further comprising:

forming a redistribution layer over the first semiconductor die; and

forming a contact pad on the redistribution layer, the second semiconductor package comprising a component pad coupled to the contact pad.

21. The method of claim 15 , wherein the second semiconductor package comprises an inductor, a resistor, and/or a capacitor.

22. The method of claim 15 , wherein the second semiconductor package comprises a discrete passive device.

23. A method of forming a semiconductor module, the method comprising:

providing a semiconductor package comprising a first semiconductor die disposed in a first encapsulant;

forming an opening in the first encapsulant; and

attaching a second semiconductor die at least partially within the opening in the first encapsulant.

24. The method of claim 23 , wherein the second die comprises an inductor, a resistor, and/or a capacitor.

25. The method of claim 23 , wherein the second die comprises a discrete passive device.

26. The method of claim 23 , further comprising:

forming a second encapsulant over the second semiconductor die and the semiconductor package.

27. The method of claim 26 , wherein the first and the second semiconductor dies comprise discrete power semiconductors.

28. The method of claim 26 , wherein the second semiconductor die protrudes out of the opening.

29. The method of claim 26 , wherein the second semiconductor die is disposed completely within the opening.

30. The method of claim 26 , wherein the semiconductor package comprises a clip coupling a contact pad on the first semiconductor die to a lead, wherein the second semiconductor die comprises a contact pad coupled to a portion of the clip, and wherein the second semiconductor die is attached over the clip.

31. The method of claim 26 , wherein the first semiconductor die comprises a first contact pad, wherein the second semiconductor die comprises a second contact pad attached to the first contact pad of the first semiconductor die.