Alignment method of semiconductor optical amplifier and light output device
Provided is an alignment method of a semiconductor optical amplifier with which optimization of coupling efficiency between incident laser light and light waveguide of the semiconductor optical amplifier is enabled without depending on an external monitoring device. The alignment method of a semiconductor optical amplifier is a method that optically amplifies laser light from a laser light source and outputs the optically amplified laser light, which adjusts relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier by flowing a given value of current to the semiconductor optical amplifier while entering the laser light from the laser light source to the semiconductor optical amplifier so that a voltage applied to the semiconductor optical amplifier becomes the maximum.
1. A method for aligning a semiconductor optical amplifier configured to optically amplify laser light from a laser light source and output the optically amplified laser light, the method comprising:
adjusting a relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier by applying a given value of current to the semiconductor optical amplifier while the laser light from the laser light source enters the semiconductor optical amplifier so that a voltage applied to the semiconductor optical amplifier is at a maximum,
wherein,
the semiconductor optical amplifier includes a first electrode and a second electrode,
the second electrode includes a first section and a second section,
0.001≦LAmp-2/LAmp-1≦0.01 is satisfied, where a length of the first section is LAmp-1 and a length of the second section is LAmp-2,
light amplification is performed by applying voltage to the first section of the second electrode, and
measurement for position adjustment is performed by applying voltage to the second section of the second electrode.
2. The method of claim 1 , further comprising:
readjusting the relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier if light output from the semiconductor amplifier is measured and changed from a desired value by applying the given value of current to the semiconductor optical amplifier while the laser light from the laser light source enters the semiconductor optical amplifier so that the voltage applied to the semiconductor optical amplifier is at the maximum.
3. The method of claim 2 , further comprising:
adjusting a light path through which the laser light outputted from the semiconductor optical amplifier passes if a result of the readjustment of the relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier is the same as the relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier before the readjustment.
4. The method of claim 1 , wherein the semiconductor optical amplifier includes:
(a) a laminated structure having a first compound semiconductor layer with a first conductivity type and composed of GaN compound semiconductor, a third compound semiconductor layer with a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer with a second conductivity type different from the first conductivity type and composed of GaN compound semiconductor,
(b) the second electrode formed on the second compound semiconductor layer, and
(c) the first electrode electrically connected to the first compound semiconductor layer.
5. The method of claim 1 , wherein the light output of the laser light outputted from the semiconductor optical amplifier reaches the maximum by adjusting the relative position of the semiconductor optical amplifier with respect to the laser light entering the semiconductor optical amplifier.
6. The method of claim 1 , wherein the semiconductor optical amplifier is composed of a transmissive semiconductor optical amplifier.
7. The method of claim 1 ,
wherein,
the laser light source is composed of a mode locking laser diode device, and
the mode locking laser diode device is configured to output a pulse laser light that enters the semiconductor optical amplifier based on mode locking operation.
8. A method of aligning a semiconductor optical amplifier configured to optically amplify laser light from a laser light source and output the optically amplified laser light, the method comprising:
adjusting a relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier by applying a given value of voltage to the semiconductor optical amplifier while the laser light from the laser light source enters the semiconductor optical amplifier so that a current flowing in the semiconductor optical amplifier is at a maximum; and
applying a voltage of −20 to 4 volts both inclusive to the semiconductor optical amplifier to perform measurement for position adjustment,
wherein,
the semiconductor optical amplifier includes (a) a laminated structure having a first compound semiconductor layer with a first conductivity type and composed of GaN compound semiconductor, a third compound semiconductor layer with a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer with a second conductivity type different from the first conductivity type and composed of GaN compound semiconductor, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer,
the second electrode is composed of a first section and a second section that is (i) provided on a light output end face side of the semiconductor optical amplifier, and (ii) separated from the first section by an isolation trench,
the voltage of −20 to 4 volts both inclusive is applied to the second section of the second electrode to perform measurement for position adjustment, and
another voltage is applied to the first section of the second electrode to perform light amplification.
9. The method of claim 8 , further comprising:
readjusting the relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier if light output from the semiconductor optical amplifier is measured and changed from a desired value by applying the given value of voltage to the semiconductor optical amplifier while the laser light from the laser light source enters the semiconductor optical amplifier so that the current flowing in the semiconductor optical amplifier is at the maximum.
10. The method of claim 9 , further comprising:
adjusting a light path through which the laser light outputted from the semiconductor optical amplifier passes if a result of the readjustment of the relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier is the same as the relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier before the readjustment.
11. The method of claim 8 , wherein 0.001≦LAmp-2/LAmp-1≦0.01 is satisfied, where a length of the first section is LAmp-1 and a length of the second section is LAmp-2.
12. The method of claim 8 , wherein the voltage applied to the semiconductor optical amplifier is applied to the second section of the second electrode.
13. A light output device comprising:
a laser light source;
a semiconductor optical amplifier configured to (i) optically amplify laser light received from the laser light source, and (ii) output the optically amplified light;
an alignment device configured to adjust a relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier; and
a semiconductor optical amplifier control device configured to control operation of the semiconductor optical amplifier,
wherein,
the laser light source is configured to transmit the laser light to the semiconductor optical amplifier while a given value of current is applied to the semiconductor optical amplifier,
the semiconductor optical amplifier control device is configured to monitor a voltage applied to the semiconductor optical amplifier, and
the relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier is configured to be adjusted by the alignment device so that the voltage applied to the semiconductor optical amplifier is at a maximum, and
resolution of a voltage monitor in the semiconductor optical amplifier control device is 1 millivolt or less.
14. A light output device comprising:
a laser light source;
a semiconductor optical amplifier configured to (i) optically amplify laser light from the laser light source, and (ii) output the optically amplified light;
an alignment device configured to adjust a relative position of the semiconductor optical amplifier with respect to the laser light entering the semiconductor optical amplifier; and
a semiconductor optical amplifier control device configured to control operation of the semiconductor optical amplifier,
wherein,
the laser light source is configured to transmit the laser light to the semiconductor optical amplifier while a given value of voltage is applied to the semiconductor optical amplifier,
the semiconductor optical amplifier control device is configured to monitor a current applied to the semiconductor optical amplifier,
the relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier is configured to be adjusted by the alignment device so that the current applied to the semiconductor optical amplifier is at a maximum, and
resolution of a current monitor in the semiconductor optical amplifier control device is 100 microamperes or less.