IP Library Granted Patent US 8,920,767
Granted Patent B2
US 8,920,767 · App. 13/213,923 · Granted Dec 30, 2014

Array of titanium dioxide nanostructures for solar energy utilization

Inventors: Xiaofeng Qiu (Sleepy Hollow, NY); Mariappan Parans Paranthaman (Knoxville, TN); Miaofang Chi (Knoxville, TN); Ilia N. Ivanov (Knoxville, TN); Zhenyu Zhang (Oak Ridge, TN)
Assignee: UT-Battelle, LLC
H01B1/08H01L31/035281H01L31/18Y02E10/50H01L31/035218
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Quick Facts
Patent No.
US 8,920,767
App. No.
13/213,923
Granted
Dec 30, 2014
Kind
B2
Abstract

An array of titanium dioxide nanostructures for solar energy utilization includes a plurality of nanotubes, each nanotube including an outer layer coaxial with an inner layer, where the inner layer comprises p-type titanium dioxide and the outer layer comprises n-type titanium dioxide. An interface between the inner layer and the outer layer defines a p-n junction.

Claims (28)

1. A titanium dioxide nanostructure for solar energy utilization, the nanostructure comprising:

a nanotube comprising an outer layer coaxial with an inner layer, the inner layer comprising p-type titanium dioxide and the outer layer comprising n-type titanium dioxide, an interface between the inner layer and the outer layer defining a p-n junction.

2. The nanostructure of claim 1 , wherein the inner layer comprises a thickness of between about 5 nm and 40 nm.

3. The nanostructure of claim 1 , wherein the inner layer comprises titanium dioxide doped with nitrogen.

4. The nanostructure of claim 3 , wherein the nitrogen is present in an amount that varies along a radial direction.

5. The nanostructure of claim 4 , wherein the amount of nitrogen decreases in the radial direction away from a center of the nanotube.

6. The nanostructure of claim 3 , wherein the nitrogen is present in an amount that is substantially uniform along a radial direction.

7. The nanostructure of claim 3 , wherein the nitrogen is present in both substitutional and interstitial sites of the titanium dioxide.

8. The nanostructure of claim 7 , wherein a majority of the nitrogen is present in the substitutional sites.

9. The nanostructure of claim 1 , wherein the outer layer comprises substantially undoped titanium dioxide.

10. The nanostructure of claim 9 , wherein the outer layer comprises a thickness of between about 5 nm and 40 nm.

11. The nanostructure of claim 1 , wherein the nanotube has an inner diameter of between about 10 nm and 80 nm.

12. An array of titanium dioxide nanostructures for solar energy utilization, the array comprising:

a plurality of nanotubes, each nanotube comprising an outer layer coaxial with an inner layer, the inner layer comprising p-type titanium dioxide and the outer layer comprising n-type titanium dioxide, an interface between the inner layer and the outer layer defining a p-n junction.

13. The array of claim 12 , wherein the plurality of nanotube structures exhibit a light absorption of visible light by shifting from 400 nm to 625 nm.

14. A method of making an array of titanium dioxide nanostructures for solar energy utilization, the method comprising:

creating an array of nanotubes comprising titanium dioxide;

exposing the array of nanotubes to a gas comprising a dopant element; and

controllably doping each of the nanotubes to form an inner layer comprising p-type titanium dioxide and an outer layer coaxial with the inner layer that comprises n-type titanium dioxide, where an interface between the inner layer and the outer layer defines a p-n junction.

15. The method of claim 14 , wherein creating the array of titanium dioxide nanotubes comprises anodizing a titanium foil.

16. The method of claim 15 , wherein the anodizing is carried out at a voltage between 10 V and 100 V.

17. The method of claim 16 , wherein the voltage is between about 40 V and 60 V.

18. The method of claim 14 , wherein the anodizing is carried out at an anodizing temperature of between about −20° C. and about 20° C.

19. The method of claim 14 , wherein the dopant element is nitrogen.

20. The method of claim 14 , wherein exposing the array to the gas comprises flowing the gas through the array at a flow rate of between about 2 milliliters/hour and 10 liters/hour.

21. The method of claim 14 , further comprising heating the array at an annealing temperature of between about 100° C. and 700° C. during the exposure to the gas.

22. The method of claim 21 , wherein the annealing temperature is at least about 500° C.

23. The method of claim 14 , wherein the gas is NH 3 .

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2012
From: QIU, XIAOFENG
To: OAK RIDGE ASSOCIATED UNIVERSITIES
Reel/Frame 027672/0519 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2012
From: OAK RIDGE ASSOCIATED UNIVERSITIES
To: UT-BATTELLE, LLC
Reel/Frame 027672/0548 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2012
From: PARANTHAMAN, MARIAPPAN PARANS; CHI, MIAOFANG; IVANOV, ILIA N.; ZHANG, ZHENYU
To: UT-BATTELLE, LLC
Reel/Frame 027672/0617 →
CONFIRMATORY LICENSE Recorded Dec 14, 2011
From: UT-BATTELLE, LLC
To: U.S. DEPARTMENT OF ENERGY
Reel/Frame 027379/0830 →
Continuity (1)
Related Publication 20130045383A1 · Feb 21, 2013