Light-emitting device
In a light-emitting device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
1. A light-emitting device comprising a thin film transistor comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a microcrystalline semiconductor film over the gate insulating film, the microcrystalline semiconductor film including a channel formation region;
a buffer layer over and in direct contact with the microcrystalline semiconductor film, the buffer layer comprising an amorphous semiconductor;
source and drain regions over the buffer layer;
source and drain electrodes over the source and drain regions; and
an insulating film over the source and drain electrodes, and the source and drain regions,
wherein entirety of one of the source and drain electrodes is over and in direct contact with one of the source and drain regions,
wherein a part of an upper surface of the source and drain regions is in direct contact with the source and drain electrodes,
wherein the other part of the upper surface of the source and drain regions is not in direct contact with the source and drain electrodes,
wherein the other part of the upper surface of the source and drain regions and a part of the buffer layer are in direct contact with the insulating film,
wherein at least a part of an upper surface of the one of the source and drain electrodes is in direct contact with the insulating film,
wherein the buffer layer includes:
a concave portion overlapping at least a part of the channel formation region; and
an end portion,
wherein the source and drain electrodes do not overlap with a horizontal upper surface of the end portion of the buffer layer,
wherein a side of the concave portion is aligned with edge portions of the source and drain regions, and
wherein the buffer layer contains nitrogen.
2. The light-emitting device according to claim 1 , further comprising:
a pixel electrode over the insulating film,
wherein the pixel electrode is electrically connected to the source and drain electrodes through a contact hole in the insulating film.
3. The light-emitting device according to claim 2 , wherein a light-emitting layer comprising an organic compound is over and in direct contact with the pixel electrode.
4. The light-emitting device according to claim 1 ,
wherein a part of the microcrystalline semiconductor film overlaps the source and drain regions with the buffer layer interposed therebetween,
wherein the microcrystalline semiconductor film includes an impurity element which imparts p-type conductivity, and
wherein the source and drain regions include an impurity element which imparts n-type conductivity.
5. The light-emitting device according to claim 1 , wherein the amorphous semiconductor comprises at least any one of hydrogen, and halogen.
6. The light-emitting device according to claim 1 , wherein a concentration of the nitrogen is 5×10 18 cm −3 or less.
7. The light-emitting device according to claim 1 , further comprising a wiring being over and electrically connected to the other of the source and drain electrodes.
8. The light-emitting device according to claim 1 ,
wherein the microcrystalline semiconductor film contains silicon, and
wherein the buffer layer contains silicon.
9. The light-emitting device according to claim 1 ,
wherein the microcrystalline semiconductor film has crystal grains with a diameter of 0.5 nm to 20 nm inclusive in a non-single-crystal semiconductor,
wherein a thickness of the microcrystalline semiconductor film is 1 nm to 100 nm inclusive, and
wherein a thickness of the concave portion is 1 nm to 100 nm inclusive.
10. A light-emitting device comprising a thin film transistor comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a microcrystalline semiconductor film over the gate insulating film, the microcrystalline semiconductor film including a channel formation region;
a buffer layer over and in direct contact with the microcrystalline semiconductor film, the buffer layer comprising an amorphous semiconductor;
source and drain regions over the buffer layer;
source and drain electrodes over the source and drain regions; and
an insulating film over the source and drain electrodes, and the source and drain regions,
wherein entirety of one of the source and drain electrodes is over and in direct contact with one of the source and drain regions,
wherein a part of an upper surface of the source and drain regions and a part of the buffer layer are in direct contact with the insulating film,
wherein at least a part of an upper surface of the one of the source and drain electrodes is in direct contact with the insulating film,
wherein the buffer layer includes:
a concave portion overlapping at least a part of the channel formation region; and
an end portion,
wherein the source and drain electrodes do not overlap with a horizontal upper surface of the end portion of the buffer layer,
wherein a side of the concave portion is aligned with edge portions of the source and drain regions, and
wherein the buffer layer contains nitrogen.
11. The light-emitting device according to claim 10 , further comprising:
a pixel electrode over the insulating film,
wherein the pixel electrode is electrically connected to the source and drain electrodes through a contact hole in the insulating film.
12. The light-emitting device according to claim 11 , wherein a light-emitting layer comprising an organic compound is over and in direct contact with the pixel electrode.
13. The light-emitting device according to claim 10 ,
wherein a part of the microcrystalline semiconductor film overlaps the source and drain regions with the buffer layer interposed therebetween,
wherein the microcrystalline semiconductor film includes an impurity element which imparts p-type conductivity, and
wherein the source and drain regions include an impurity element which imparts n-type conductivity.
14. The light-emitting device according to claim 10 , wherein the amorphous semiconductor comprises at least any one of hydrogen, and halogen.
15. The light-emitting device according to claim 10 , wherein a concentration of the nitrogen is 5×10 18 cm −3 or less.
16. The light-emitting device according to claim 10 , further comprising a wiring being over and electrically connected to the other of the source and drain electrodes.
17. The light-emitting device according to claim 10 ,
wherein the microcrystalline semiconductor film contains silicon, and
wherein the buffer layer contains silicon.
18. The light-emitting device according to claim 10 ,
wherein the microcrystalline semiconductor film has crystal grains with a diameter of 0.5 nm to 20 nm inclusive in a non-single-crystal semiconductor,
wherein a thickness of the microcrystalline semiconductor film is 1 nm to 100 nm inclusive, and
wherein a thickness of the concave portion is 1 nm to 100 nm inclusive.
19. A light-emitting device comprising a thin film transistor comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a microcrystalline semiconductor film over the gate insulating film, the microcrystalline semiconductor film including a channel formation region;
a buffer layer over and in direct contact with the microcrystalline semiconductor film, the buffer layer comprising an amorphous semiconductor;
source and drain regions over the buffer layer;
source and drain electrodes over the source and drain regions; and
an insulating film over the source and drain electrodes, and the source and drain regions,
wherein entirety of one of the source and drain electrodes is over and in direct contact with one of the source and drain regions,
wherein a part of an upper surface of the source and drain regions and a part of the buffer layer are in direct contact with the insulating film,
wherein at least a part of an upper surface of the one of the source and drain electrodes is in direct contact with the insulating film,
wherein the source and drain regions extend beyond edges of the source and drain electrodes,
wherein a distance between edges of the source and drain regions facing each other is shorter than a distance between the edges of the source and drain electrodes facing each other,
wherein the buffer layer includes:
a concave portion overlapping at least a part of the channel formation region; and
an end portion,
wherein the source and drain electrodes do not overlap with a horizontal upper surface of the end portion of the buffer layer,
wherein a side of the concave portion is aligned with edge portions of the source and drain regions, and
wherein the buffer layer contains nitrogen.
20. The light-emitting device according to claim 19 , further comprising:
a pixel electrode over the insulating film,
wherein the pixel electrode is electrically connected to the source and drain electrodes through a contact hole in the insulating film.
21. The light-emitting device according to claim 20 , wherein a light-emitting layer comprising an organic compound is over and in direct contact with the pixel electrode.
22. The light-emitting device according to claim 19 ,
wherein a part of the microcrystalline semiconductor film overlaps the source and drain regions with the buffer layer interposed therebetween,
wherein the microcrystalline semiconductor film includes an impurity element which imparts p-type conductivity, and
wherein the source and drain regions include an impurity element which imparts n-type conductivity.
23. The light-emitting device according to claim 19 , wherein the amorphous semiconductor comprises at least any one of hydrogen, and halogen.
24. The light-emitting device according to claim 19 , wherein a concentration of the nitrogen is 5×10 18 cm −3 or less.
25. The light-emitting device according to claim 19 , further comprising a wiring being over and electrically connected to the other of the source and drain electrodes.
26. The light-emitting device according to claim 19 ,
wherein the microcrystalline semiconductor film contains silicon, and
wherein the buffer layer contains silicon.
27. The light-emitting device according to claim 19 ,
wherein the microcrystalline semiconductor film has crystal grains with a diameter of 0.5 nm to 20 nm inclusive in a non-single-crystal semiconductor,
wherein a thickness of the microcrystalline semiconductor film is 1 nm to 100 nm inclusive, and
wherein a thickness of the concave portion is 1 nm to 100 nm inclusive.