Power electronics modules with solder layers having reduced thermal stress
Power electronics modules having solder layers with reduced thermal-stress are disclosed. In one embodiment, a power electronics module includes a power electronics device having a first surface, a second surface, a first edge, and a second edge opposite the first edge. The power electronics device has a device length measured from the first edge to the second edge. A first solder layer is adjacent to the first surface of the power electronics device, and a second solder layer is adjacent to the second surface. The first solder layer and the second solder layer have a maximum thickness T along a length that is less than the device length of the power electronics device. A first thermally conductive layer is adjacent to the first solder layer, and a second thermally conductive layer is adjacent to the second solder layer. In some embodiments, the first and second solder layers have tapered portions.
1. A power electronics module comprising:
a power electronics device comprising a first surface, a second surface opposite from the first surface, a first edge, and a second edge opposite the first edge, the power electronics device having a device length measured from the first edge to the second edge;
a first solder layer adjacent to the first surface of the power electronics device;
a second solder layer adjacent to the second surface of the power electronics device, wherein the first solder layer and the second solder layer have a maximum thickness T along a length that is less than the device length of the power electronics device;
a first thermally conductive layer adjacent to the first solder layer, wherein the first solder layer thermally couples the first thermally conductive layer to the first surface of the power electronics device;
a second thermally conductive layer adjacent to the second solder layer, wherein the second solder layer thermally couples the second thermally conductive layer to the second surface of the power electronics device; and
a thermally conductive sealing material, wherein:
the thermally conductive sealing material contacts a portion of the first surface of the power electronics device and a portion of the second surface of the power electronics device; and
the thermally conductive sealing material contacts the first solder layer, the second solder layer, the first thermally conductive layer, and the second thermally conductive layer.
2. The power electronics module of claim 1 , wherein the power electronics device is fabricated from silicon carbide.
3. The power electronics module of claim 1 , wherein the first solder layer and the second solder layer each comprise a curved edge.
4. The power electronics module of claim 1 , wherein a thickness of the first solder layer and the second solder layer decreases from the maximum thickness T toward the first edge and the second edge of the power electronics device, thereby forming tapered solder portions on the first surface and the second surface of the power electronics device.
5. The power electronics module of claim 1 , wherein:
the first thermally conductive layer is a thermally conductive spacer;
the power electronics module further comprise a first heat spreader layer thermally coupled to a surface of the thermally conductive spacer;
the second thermally conductive layer is a second heat spreader layer; and
the power electronics module further comprises a first cooler device bonded to the first heat spreader layer, and a second cooler device bonded to the second heat spreader layer.
6. A power electronics module comprising:
a power electronics device comprising a first surface, a second surface opposite from the first surface, a first edge, and a second edge opposite the first edge, the power electronics device having a device length measured from the first edge to the second edge;
a first solder layer adjacent to the first surface of the power electronics device, the first solder layer having a length that is less than the device length of the power electronics device;
a second solder layer adjacent to the second surface of the power electronics device, the second solder layer having a length that is less than the device length of the power electronics device, wherein portions of the power electronics device extend beyond the first solder layer and the second solder layer;
a first thermally conductive layer adjacent to the first solder layer, wherein the first solder layer thermally couples the first thermally conductive layer to the first surface of the power electronics device;
a second thermally conductive layer adjacent to the second solder layer, wherein the second solder layer thermally couples the second thermally conductive layer to the second surface of the power electronics device; and
a thermally conductive sealing material, wherein:
portions of the power electronics device extend beyond an edge of the first solder layer and an edge of the second solder layer; and
the thermally conductive sealing material contacts a portion of the first surface of the power electronics device and a portion of the second surface of the power electronics device.
7. The power electronics module of claim 6 , wherein the power electronics device comprises at least one electrode on the first surface or the second surface, and the at least one electrode does not contact the first solder layer or the second solder layer.
8. The power electronics module of claim 6 , wherein the power electronics device is fabricated from silicon carbide.
9. The power electronics module of claim 6 , wherein the first solder layer and the second solder layer each comprise a curved edge.
10. The power electronics module of claim 6 , wherein a thickness of the first solder layer and the second solder layer decreases from a maximum thickness T toward the first edge and the second edge of the power electronics device, thereby forming tapered solder portions on the first surface and the second surface of the power electronics device.
11. The power electronics module of claim 6 , wherein:
the first thermally conductive layer is a thermally conductive spacer;
the power electronics module further comprise a first heat spreader layer thermally coupled to a surface of the thermally conductive spacer;
the second thermally conductive layer is a second heat spreader layer; and
the power electronics module further comprises a first cooler device thermally coupled to the first heat spreader layer, and a second cooler device thermally coupled to the second heat spreader layer.
12. The power electronics module of claim 6 , wherein the power electronics module further comprises a first cooler device thermally coupled to the first thermally conductive layer, and a second cooler device thermally coupled to the second thermally conductive layer.
13. A power electronics module comprising:
a power electronics device comprising a first surface, a second surface opposite from the first surface, a first edge, and a second edge opposite the first edge, wherein:
a first solder layer adjacent to the first surface of the power electronics device, and a second solder layer adjacent to the second surface of the power electronics device;
the first solder layer and the second solder layer each have a maximum thickness T;
a thickness of the first solder layer and the second solder layer decreases from the maximum thickness T toward the first edge and the second edge of the power electronics device, thereby defining tapered solder portions on the first surface and the second surface of the power electronics device;
a first thermally conductive layer adjacent to the first solder layer, wherein the first solder layer thermally couples the first thermally conductive layer to the first surface of the power electronics device;
a second thermally conductive layer adjacent to the second solder layer, wherein the second solder layer thermally couples the second thermally conductive layer to the second surface of the power electronics device; and
a thermally conductive sealing material surrounding portions of the power electronics device, the first solder layer, the second solder layer, the first thermally conductive layer, and the second thermally conductive layer, wherein:
portions of the power electronics device extend beyond an edge of the first solder layer and an edge of the second solder layer; and
the thermally conductive sealing material contacts a portion of the first surface of the power electronics device and a portion of the second surface of the power electronics device.
14. The power electronics module of claim 13 , wherein the power electronics device comprises at least one electrode on the first surface or the second surface, and the at least one electrode does not contact the first solder layer or the second solder layer.
15. The power electronics module of claim 13 , wherein the power electronics device is fabricated from silicon carbide.
16. The power electronics module of claim 13 , wherein:
the first thermally conductive layer is a thermally conductive spacer;
the power electronics module further comprise a first heat spreader layer thermally coupled to a surface of the thermally conductive spacer;
the second thermally conductive layer is a second heat spreader layer; and
the power electronics module further comprises a first cooler device bonded to the first heat spreader layer, and a second cooler device bonded to the second heat spreader layer.
17. The power electronics module of claim 13 , wherein the power electronics module further comprises a first cooler device thermally coupled to the first thermally conductive layer,
and a second cooler device thermally coupled to the second thermally conductive layer.