IP Library › Granted Patent US 8,921,998
Granted Patent B2
US 8,921,998 · App. 14/236,236 · Granted Dec 30, 2014

Semiconductor module

Inventors: Yusuke Zushi (Nottingham, GB); Yoshinori Murakami (Yokohama, JP); Satoshi Tanimoto (Yokohama, JP); Shinji Sato (Niiza, JP); Kohei Matsui (Hino, JP)
Assignees: Nissan Motor Co., Ltd.; Sanken Electric Co., Ltd.; Fuji Electric Co., Ltd.
H01L23/5384H01L23/3735H01L2924/1306H01L24/48H01L24/49H01L25/072H01L2224/48132H01L2224/48227H01L2224/48235H01L2224/49175H01L2924/10272H01L2924/1033H01L2924/1203H01L2924/1305H01L2924/13055H01L2924/13091H01L2924/30105H01L2224/48091H01L2224/48472H01L2224/49111H01L2224/4846H01L23/49811H01L25/18H01L2924/30107
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Quick Facts
Patent No.
US 8,921,998
App. No.
14/236,236
Granted
Dec 30, 2014
Kind
B2
Abstract

A semiconductor module has a pair of semiconductor devices, a heat sink, a first electrode, an output electrode and a second electrode. The semiconductor devices are connected in series with each other and have first terminals that are electrically connected to a first power system and a second terminal that is electrically connected to a second power system. The first electrode is electrically connected both to one of the first terminal and to an electrode of one of the semiconductor devices. The output electrode is electrically connected both to the second terminal and to an electrode of the other of the semiconductor device. The second electrode is electrically connected to the other of the first terminals. The second electrode is connected to the heat sink via a first insulating member. The output electrode is connected to the second electrode via a second insulating member.

Claims (27)

1. A semiconductor module comprising:

a first terminal having two terminal sections electrically connected to a first power system, and a second terminal electrically connected to a second power system;

a first semiconductor device having a first electrode section and a second electrode section;

a second semiconductor device having a first electrode section and a second electrode section, the second semiconductor device being connected in series with the first semiconductor device;

a heat sink;

a first electrode electrically connected between one of the two terminal sections of the first terminal and to the first electrode section of the first semiconductor device;

an output electrode electrically connected to the second terminal, the second electrode section of the first semiconductor device, and the first electrode section of the second semiconductor device; and

a second electrode electrically connected between the other of the two terminal sections of the first terminal and the second electrode section of the second semiconductor device,

the second electrode overlying a first side of a first insulating member, a second insulating member overlying the second electrode on a side opposite to the first insulating member, and the output electrode overlying the second insulating member on a side opposite to the second electrode and a second side of the first insulating member overlying the heat sink.

2. The semiconductor module according to claim 1 , wherein

the first electrode is connected to the second electrode via the second insulating member.

3. The semiconductor module according to claim 1 , wherein

the first electrode is connected to the heat sink via the first insulating member, and

an area of the first electrode and an area of the second electrode are substantially identical.

4. The semiconductor module according to claim 1 , wherein

the second electrode includes

an electrode formed on the same surface as the output electrode,

an electrode formed on the first insulating member, and

a through hole that connects these two electrodes.

5. The semiconductor module according to claim 2 , wherein the second electrode includes

an electrode formed on the same surface as the output electrode,

an electrode formed on the first insulating member, and

a through hole that connects these two electrodes.

6. The semiconductor module according to claim 3 , wherein the second electrode includes

an electrode formed on the same surface as the output electrode,

an electrode formed on the first insulating member, and

a through hole that connects these two electrodes.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 30, 2014
From: ZUSHI, YUSUKE; MURAKAMI, YOSHINORI; TANIMOTO, SATOSHI; SATO, SHINJI; MATSUI, KOHEI
To: NISSAN MOTOR CO., LTD.; SANKEN ELECTRIC CO., LTD.; FUJI ELECTRIC CO., LTD.
Reel/Frame 032096/0094 →
Priority Claims (1)
JP 2011-184019 · Aug 25, 2011 · national
Continuity (1)
Related Publication 20140159225A1 · Jun 12, 2014