IP Library Granted Patent US 8,927,259
Granted Patent B2
US 8,927,259 · App. 12/514,941 · Granted Jan 6, 2015

Piezoelectric microcantilever sensors for biosensing

Inventors: Wan Y. Shih (Bryn Mawr, PA); Wei-Heng Shih (Bryn Mawr, PA); Zuyan Shen (Philadelphia, PA); John-Paul Mcgovern (Philadelphia, PA); Qing Zhu (Philadelphia, PA); Joseph Capobianco (Marlton, NJ)
Assignee: Drexel University
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Quick Facts
Patent No.
US 8,927,259
App. No.
12/514,941
Granted
Jan 6, 2015
Kind
B2
Abstract

A piezoelectric microcantilever for sensing compounds or molecules. The piezoelectric microcantilever, may include at least one electrode, an insulation layer, a receptor, an immobilization layer, a non-piezoelectric layer and a piezoelectric layer. The sensor is capable of self actuation and detection. The piezoelectric layer may be constructed from a highly piezoelectric thin lead magnesium niobate-lead titanate film, a highly piezoelectric thin zirconate titanate film, a highly piezoelectric lead-free film. Methods of using the sensors and flow cells and arrays including the sensors are also described.

Claims (29)

1. A piezoelectric microcantilever sensor having a Q value greater than 20 comprising:

a non-piezoelectric layer,

a piezoelectric layer,

at least one conducting element operatively associated with the piezoelectric layer and

a receptor capable of binding a molecule or compound whereby, upon binding, said molecule or compound, said receptor exerts a force on the piezoelectric layer and causes a shift in the resonance frequency of the piezoelectric microcantilever sensor,

wherein the said piezoelectric layer is selected from the group consisting of:

a piezoelectric thin film having a dielectric constant of greater than 1600 and a thickness of less than 4 μm, and

a piezoelectric film having a thickness less than 75 μm and a piezoelectric coefficient −d 31 of at least 250 pm/V.

2. The piezoelectric microcantilever sensor of claim 1 , further comprising an electrical insulation layer which insulates the at least one conducting element.

3. The piezoelectric microcantilever sensor of claim 2 , wherein the electrical insulation layer comprises a material selected from the group consisting of poly-para-xylylene, methyltrimethoxysilane, 3-mercaptopropyl trimethoxysilane, Al 2 O 3 , SiO 2 and functionalized hydrophobic silanes and mixtures thereof.

4. The piezoelectric microcantilever sensor of claim 1 , wherein said receptor is bound to the conducting element by an immobilization layer.

5. The piezoelectric microcantilever sensor of claim 1 , wherein a length of said piezoelectric layer is less than or greater than a length of said non-piezoelectric layer.

6. The piezoelectric microcantilever sensor of claim 1 , wherein said piezoelectric thin film of the piezoelectric layer is derived from a free standing piezoelectric film.

7. The piezoelectric microcantilever sensor of claim 1 , wherein said piezoelectric layer has a dielectric constant of at least 1600 and a thickness less than 2 μm.

8. The piezoelectric microcantilever sensor of claim 1 , wherein said piezoelectric layer has a dielectric constant of at least 1900 and a thickness less than 4 μm.

9. The piezoelectric microcantilever sensor of claim 1 , wherein said piezoelectric layer has a dielectric constant of at least 1900 and a thickness less than 2 μm.

10. The piezoelectric microcantilever sensor of claim 1 , wherein said piezoelectric layer has a piezoelectric constant −d 31 of at least 250 pm/v and a thickness less than 8 μm.

11. The piezoelectric microcantilever sensor of claim 4 , wherein said piezoelectric layer comprises a material selected from the group consisting of lead magnesium niobate-lead titanate, lead-zirconate-titanate, and doped sodium potassium niobate-lithium niobate.

12. The piezoelectric microcantilever sensor of claim 4 , wherein said piezoelectric layer comprises a lead-free piezoelectric material.

13. The piezoelectric microcantilever sensor of claim 1 , wherein said piezoelectric microcantilever has a Q value greater than 120.

14. The piezoelectric microcantilever sensor of claim 1 , wherein the non-piezoelectric layer comprises a material selected from the group consisting of ceramic material, polymeric material, metallic material and combinations thereof.

15. The piezoelectric microcantilever sensor of claim 1 , wherein said non-piezoelectric layer comprises a material selected from the group consisting of silicon dioxide, silicon nitride, tin and copper.

16. The piezoelectric microcantilever sensor of claim 15 , wherein said non-piezoelectric layer comprises multiple layers of different materials.

17. The piezoelectric microcantilever sensor of claim 1 , wherein the microcantilever is capable of being driven in a capacitive method by applying a voltage across said piezoelectric layer.

18. A flow cell comprising a sample chamber, at least one microcantilever sensor as claimed in claim 1 , a pump and at least one channel for each sensor which is capable of determining the presence or amount of a compound or molecule which binds to said sensor.

19. The flow cell of claim 18 , further comprising a humidity control mechanism.

20. The flow cell of claim 19 , further comprising a temperature control mechanism.

21. The flow cell of claim 18 , comprising an array of microcantilever sensors and wherein said array is portable.

22. The piezoelectric microcantilever sensor of claim 1 , wherein said receptor is selected from the group consisting of DNA, proteins, enzymes, cells, viruses, parasites, antigens and pathogens.

Assignments (2)
SECURITY INTEREST Recorded Nov 3, 2021
From: TBT GROUP, INC.
To: THE ENPEX CORPORATION
Reel/Frame 058012/0503 →
CONFIRMATORY LICENSE Recorded Dec 17, 2018
From: DREXEL UNIVERSITY
To: NATIONAL INSTITUTES OF HEALTH (NIH), U.S. DEPT. OF HEALTH AND HUMAN SERVICES (DHHS), U.S. GOVERNMENT
Reel/Frame 047928/0733 →
Continuity (2)
Provisional Application 60867538 · Nov 28, 2006
Related Publication 20100068697A1 · Mar 18, 2010