IP Library › Granted Patent US 8,927,985
Granted Patent B2
US 8,927,985 · App. 14/027,426 · Granted Jan 6, 2015

Semiconductor device

Inventor: Hideki Matsukura (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L29/7869H01L27/124H01L27/1255
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Quick Facts
Patent No.
US 8,927,985
App. No.
14/027,426
Granted
Jan 6, 2015
Kind
B2
Abstract

A semiconductor device includes first and second conductive layers over an insulating surface, a first insulating layer over the first and second conductive layers, first and second oxide semiconductor layers over the first insulating layer, third and fourth conductive layers over the first oxide semiconductor layer, a second insulating layer over the third and fourth conductive layers, and a fifth conductive layer over the second insulating layer. In the semiconductor device, the third conductive layer is electrically connected to the second conductive layer, the fifth conductive layer is electrically connected to the fourth conductive layer, the first oxide semiconductor layer has a region overlapping with the first conductive layer, the second oxide semiconductor layer has a region overlapping with the fifth conductive layer, and the second oxide semiconductor layer has a region intersecting with the second conductive layer.

Claims (75)

1. A semiconductor device comprising:

a first conductive layer and a second conductive layer over an insulating surface;

a first insulating layer over the first conductive layer and the second conductive layer;

a first oxide semiconductor layer and a second oxide semiconductor layer over the first insulating layer;

a third conductive layer and a fourth conductive layer over the first oxide semiconductor layer;

a second insulating layer over the third conductive layer and the fourth conductive layer; and

a fifth conductive layer over the second insulating layer;

wherein the third conductive layer is electrically connected to the second conductive layer,

wherein the fifth conductive layer is electrically connected to the fourth conductive layer,

wherein at least part of the first conductive layer has a function as a gate electrode of a transistor,

wherein at least part of the third conductive layer has a function as one of a source electrode and a drain electrode of the transistor,

wherein at least part of the fourth conductive layer has a function as the other of the source electrode and the drain electrode of the transistor,

wherein the first oxide semiconductor layer has a region overlapping with the first conductive layer,

wherein the second oxide semiconductor layer has a region overlapping with the fifth conductive layer, and

wherein the second oxide semiconductor layer has a region intersecting with the second conductive layer.

2. The semiconductor device according to claim 1 ,

wherein an alkali metal concentration of the second oxide semiconductor layer is higher than an alkali metal concentration of the first oxide semiconductor layer.

3. The semiconductor device according to claim 1 ,

wherein an alkaline earth metal concentration of the second oxide semiconductor layer is higher than an alkaline earth metal concentration of the second oxide semiconductor layer.

4. The semiconductor device according to claim 1 ,

wherein a hydrogen concentration of the second oxide semiconductor layer is higher than a hydrogen concentration of the first oxide semiconductor layer.

5. The semiconductor device according to claim 1 ,

wherein at least part of the fifth conductive layer has a function as one electrode of a display element,

wherein at least part of the fifth conductive layer has a function as one electrode of a capacitor,

wherein at least part of the second oxide semiconductor layer has a function as the other electrode of the display element, and

wherein at least part of the second oxide semiconductor layer has a function as the other electrode of the capacitor.

6. A semiconductor device comprising:

a first conductive layer and a second conductive layer over an insulating surface;

a first insulating layer over the first conductive layer and the second conductive layer;

a first oxide semiconductor layer and a second oxide semiconductor layer over the first insulating layer;

a third conductive layer and a fourth conductive layer over the first oxide semiconductor layer;

a sixth conductive layer over the second oxide semiconductor layer;

a second insulating layer over the third conductive layer, the fourth conductive layer, and the sixth conductive layer; and

a fifth conductive layer over the second insulating layer;

wherein the third conductive layer is electrically connected to the second conductive layer,

wherein the fifth conductive layer is electrically connected to the fourth conductive layer,

wherein at least part of the first conductive layer has a function as a gate electrode of a transistor,

wherein at least part of the third conductive layer has a function as one of a source electrode and a drain electrode of the transistor,

wherein at least part of the fourth conductive layer has a function as the other of the source electrode and the drain electrode of the transistor,

wherein at least part of the sixth conductive layer has a function as an auxiliary wiring,

wherein the first oxide semiconductor layer has a region overlapping with the first conductive layer,

wherein the second oxide semiconductor layer has a region overlapping with the fifth conductive layer, and

wherein the second oxide semiconductor layer has a region intersecting with the second conductive layer.

7. The semiconductor device according to claim 6 ,

wherein an alkali metal concentration of the second oxide semiconductor layer is higher than an alkali metal concentration of the first oxide semiconductor layer.

8. The semiconductor device according to claim 6 ,

wherein an alkaline earth metal concentration of the second oxide semiconductor layer is higher than an alkaline earth metal concentration of the second oxide semiconductor layer.

9. The semiconductor device according to claim 6 ,

wherein a hydrogen concentration of the second oxide semiconductor layer is higher than a hydrogen concentration of the first oxide semiconductor layer.

10. The semiconductor device according to claim 6 ,

wherein at least part of the fifth conductive layer has a function as one electrode of a display element,

wherein at least part of the fifth conductive layer has a function as one electrode of a capacitor,

wherein at least part of the second oxide semiconductor layer has a function as the other electrode of the display element, and

wherein at least part of the second oxide semiconductor layer has a function as the other electrode of the capacitor.

11. A semiconductor device comprising:

a first conductive layer over an insulating surface;

a first insulating layer over the first conductive layer;

a first oxide semiconductor layer and a second oxide semiconductor layer over the first insulating layer;

a third conductive layer and a fourth conductive layer over the first oxide semiconductor layer;

a second insulating layer over the third conductive layer and the fourth conductive layer; and

a fifth conductive layer over the second insulating layer;

wherein the fifth conductive layer is electrically connected to the fourth conductive layer,

wherein the first oxide semiconductor layer has a region overlapping with the first conductive layer, and

wherein the second oxide semiconductor layer has a region overlapping with the fifth conductive layer.

12. The semiconductor device according to claim 11 ,

wherein an alkali metal concentration of the second oxide semiconductor layer is higher than an alkali metal concentration of the first oxide semiconductor layer.

13. The semiconductor device according to claim 11 ,

wherein an alkaline earth metal concentration of the second oxide semiconductor layer is higher than an alkaline earth metal concentration of the second oxide semiconductor layer.

14. The semiconductor device according to claim 11 ,

wherein a hydrogen concentration of the second oxide semiconductor layer is higher than a hydrogen concentration of the first oxide semiconductor layer.

15. The semiconductor device according to claim 11 ,

wherein at least part of the fifth conductive layer has a function as one electrode of a display element,

wherein at least part of the fifth conductive layer has a function as one electrode of a capacitor,

wherein at least part of the second oxide semiconductor layer has a function as the other electrode of the display element, and

wherein at least part of the second oxide semiconductor layer has a function as the other electrode of the capacitor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 27, 2013
From: MATSUKURA, HIDEKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 031295/0261 →
Priority Claims (1)
JP 2012-206461 · Sep 20, 2012 · national
Continuity (1)
Related Publication 20140077208A1 · Mar 20, 2014