Interlayer conductor and method for forming

1. A 3-D structure, comprising:

a stack including a plurality of active layers at a corresponding plurality of depths in the stack, including a top active layer, and a plurality of contact landing areas on respective active layers;

a first insulating layer over the top active layer, and having a contact area opening over the plurality of contact landing areas, the contact area opening having a longitudinal dimension and a transverse dimension;

a second insulating layer over the first insulating layer, and filling the contact area opening and having a depth over the first insulating layer;

a plurality of interlayer conductors in the second insulating layer, the interlayer connectors having a first portion within the contact area opening through the first insulating layer and extending to a corresponding one of said contact landing areas, and a second portion in part outside the contact area opening above the first insulating layer,

said first portion having a transverse dimension Y 1 that is nominally equal to the transverse dimension of the contact area opening, and

said second portion having a transverse dimension Y 2 that is greater than the transverse dimension of the contact area opening.

2. The 3-D structure of claim 1 , including a layer of material different than second insulating layer, between on sidewalls of the active layers in the plurality of contact landing areas.

3. The 3-D structure of claim 1 , wherein the contact landing areas have longitudinal pitches (e.g. sum of flat landing area and sidewall structure), and the contact area opening has a longitudinal dimension X L and a transverse dimension Y L , where X L is equal to or greater than a sum of the longitudinal pitches of the contact landing areas, and Y L is less than X L ; and

each interlayer conductor has a longitudinal dimension X V , where X V is less than the average longitudinal pitch of the contact landing areas, X V is less than Y 2 , and Y 2 is greater than Y L .

4. The 3-D structure of claim 1 , wherein the contact landing areas have longitudinal pitches (e.g. sum of flat landing area and sidewall structure), and the contact area opening has a longitudinal dimension X L and a transverse dimension Y L , where X L is equal to or greater than a sum of the longitudinal pitches of the contact landing areas, and Y L is less than X L .

5. The 3-D structure of claim 1 , wherein the first portion has a first longitudinal dimension X 1 and the second portion has a second longitudinal dimension X 2 , and the first longitudinal dimension X 1 and the second longitudinal dimension X 2 are nominally equal.

6. The 3-D structure of claim 1 , including a patterned conductor layer over the second portions of the plurality of interlayer conductors, and interlayer contacts between said second portions and the patterned conductor layer, at least some of said interlayer contacts being disposed over the contact area opening.

7. The 3-D structure of claim 1 , wherein said second portions of the plurality of interlayer conductors comprise patterned conductor lines having interlayer contacts to other elements outside of the contact area opening.

8. The 3-D structure of claim 1 , wherein said plurality of active layers comprise capacitor plates.

9. The 3-D structure of claim 1 , wherein said plurality of active layers comprise integrated circuits in a multichip package.