Electronic circuits including a MOSFET and a dual-gate JFET
Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
1. An electronic circuit comprising:
a substrate;
a MOSFET including a source and a drain both defined within the substrate, and a gate disposed on the substrate; and
a JFET, distinct from the MOSFET, and including a source, a drain, a top gate, and a bottom gate, each of the source, drain, top gate, and bottom gate being defined within the substrate,
the source of the JFET being directly coupled to the drain of the MOSFET.
2. The electronic circuit of claim 1 further comprising an isolation layer defined in the substrate, the bottom gate of the JFET being defined between the isolation layer and the top gate.
3. The electronic circuit of claim 2 wherein the isolation layer extends to beneath the MOSFET.
4. The electronic circuit of claim 1 wherein the MOSFET gate and either the top gate or the bottom gate of the JFET have different widths.
5. A method comprising:
providing a silicon on insulator wafer;
defining within the silicon of the wafer a MOSFET including a source and a drain;
defining within the silicon of the wafer a JFET including a source, a drain, a top gate, and a bottom gate;
forming a gate of the MOSFET on the silicon; and
forming a metal layer in electrical communication with both the source of the JFET and the drain of the MOSFET.
6. The method of claim 5 wherein defining within the silicon is performed by ion implantation.
7. The method of claim 5 wherein forming the gate of the MOSFET is performed by photolithography.