IP Library Granted Patent US 8,931,431
Granted Patent B2
US 8,931,431 · App. 12/729,448 · Granted Jan 13, 2015

Nozzle geometry for organic vapor jet printing

Inventors: Stephen R. Forrest (Ann Harbor, MI); Gregory McGraw (Ann Harbor, MI)
Assignee: The Regents of The University of Michigan
B41J2/005C23C14/04C23C14/12C23C14/228
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,931,431
App. No.
12/729,448
Granted
Jan 13, 2015
Kind
B2
Abstract

A first device is provided. The device includes a print head. The print head further includes a first nozzle hermetically sealed to a first source of gas. The first nozzle has an aperture having a smallest dimension of 0.5 to 500 microns in a direction perpendicular to a flow direction of the first nozzle. At a distance from the aperture into the first nozzle that is 5 times the smallest dimension of the aperture of the first nozzle, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the aperture of the first nozzle.

Claims (32)

1. A first device, comprising:

a print head comprising a planar nozzle array, a height sensor, and a z actuator; the planar nozzle array comprising a first nozzle hermetically sealed to a first source of gas;

wherein the first nozzle has an aperture having a smallest dimension of 0.5 to 500 microns in a direction perpendicular to a flow direction of the first nozzle;

wherein, at a distance from the aperture into the first nozzle that is 5 times the smallest dimension of the aperture of the first nozzle, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the aperture of the first nozzle; and wherein the z actuator is capable of maintaining the planar nozzle array at 3 μm to 10 μm above a substrate surface in response to measurements by the height sensor.

2. The first device of claim 1 , wherein the planar nozzle array comprises a plurality of first nozzles hermetically sealed to the first source of gas.

3. The first device of claim 1 , wherein the planar nozzle array further comprises a second nozzle hermetically sealed to a second source of gas different from the first source of gas,

wherein the second nozzle has an aperture having a smallest dimension of 0.5 to 500 microns in a direction perpendicular to a flow direction of the second nozzle;

wherein, at a distance from the aperture into the second nozzle that is 5 times the smallest dimension of the aperture of the second nozzle, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the aperture of the second nozzle.

4. The first device of claim 3 , wherein the planar nozzle array further comprises a third nozzle hermetically sealed to a third source of gas different from the first and second sources of gas,

wherein the third nozzle has an aperture having a smallest dimension of 0.5 to 500 microns in a direction perpendicular to a flow direction of the third nozzle;

wherein, at a distance from the aperture into the third nozzle that is 5 times the smallest dimension of the aperture of the third nozzle, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the aperture of the third nozzle.

5. The first device of claim 4 , wherein the planar nozzle array comprises a plurality of first nozzles hermetically sealed to the first source of gas, a plurality of second nozzles hermetically sealed to the second source of gas, and a plurality of third nozzles hermetically sealed to the third source of gas.

6. The first device of claim 1 , wherein the first nozzle has a constant cross section from the aperture to a distance from the aperture into the first nozzle that is 2 times the smallest dimension of the aperture of the first nozzle.

7. The first device of claim 1 , wherein the smallest dimension of the first nozzle in a direction perpendicular to a flow direction of the first nozzle continuously increases with distance from the aperture of the first nozzle for distances in the range of zero to 2 times the smallest dimension of the aperture of the first nozzle.

8. The first device of claim 1 , wherein the smallest dimension of the first nozzle in a direction perpendicular to a flow direction of the first nozzle increases linearly with distance from the aperture of the first nozzle for distances in the range of zero to 2 times the smallest dimension of the aperture of the first nozzle.

9. The first device of claim 1 , wherein the first nozzle is formed from a metal.

10. The first device of claim 1 , wherein the first nozzle is formed from a ceramic or of silicon.

11. The first device of claim 1 , wherein the first nozzle has an aperture having a smallest dimension of 100 to 500 microns in a direction perpendicular to a flow direction of the first nozzle.

12. The first device of claim 1 , wherein the first nozzle has an aperture having a smallest dimension of 20 to 100 microns in a direction perpendicular to a flow direction of the first nozzle.

13. The first device of claim 1 , wherein the first nozzle has an aperture having a smallest dimension of 0.5 to 20 microns in a direction perpendicular to a flow direction of the first nozzle.

14. The first device of claim 1 , wherein the cross section of the first nozzle perpendicular to the flow direction of the first nozzle is circular.

15. The first device of claim 1 , wherein the cross section of the first nozzle perpendicular to the flow direction of the first nozzle is rectangular.

16. The first device of claim 3 , wherein the first device further comprises:

the first and second sources of gas,

a thermal barrier disposed between the print head and the first and second sources of gas, and

independently controllable heat sources for each of the print head, the first source of gas, and the second source of gas.

17. The first device of claim 1 , wherein the first device further comprises:

the first source of gas, the first source of gas further comprising a first sublimation chamber and a second sublimation chamber;

a thermal barrier disposed between the print head and the first source of gas;

independently controllable heat sources for each of the print head, the first sublimation chamber and the second sublimation chamber.

18. The first device of claim 1 , wherein aperture is formed in a protrusion from the print head.

19. The first device of claim 1 , wherein the print head has a flatness of about 2 μm over the nozzle array.

Assignments (2)
CONFIRMATORY LICENSE Recorded Oct 6, 2020
From: UNIVERSITY OF MICHIGAN
To: UNITED STATES DEPARTMENT OF ENERGY
Reel/Frame 053983/0587 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 1, 2010
From: FORREST, STEPHEN R.; MCGRAW, GREGORY
To: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
Reel/Frame 024464/0857 →
Continuity (2)
Provisional Application 61211002 · Mar 25, 2009
Related Publication 20100247766A1 · Sep 30, 2010