Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same
A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains a zincocene having the following formula or a derivative thereof: where R1 and R2 are hydrogen or C n H 2n+1 . The n is a number selected from 1 to 3, and the R1 and R2 is one selected from the group consisting of hydrogen, a methyl group, an ethyl group and an i-propyl group. A method of depositing a zinc oxide-based thin film includes the following steps of: loading a substrate into a deposition chamber; and supplying the above-described zinc oxide precursor and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. In an exemplary embodiment, the zinc oxide-based thin film may be formed on the substrate via atmospheric pressure chemical vapor deposition.
1. A zinc oxide precursor composition for use in deposition of a zinc oxide-based thin film, comprising:
a zincocene having the following formula or a derivative thereof:
where R1 and R2 are hydrogen or C n H 2n+1 ;
a carrier gas; and
an oxidizing gas.
2. The zinc oxide precursor composition of claim 1 , wherein the n is a number selected from 1 to 3.
3. The zinc oxide precursor composition of claim 2 , wherein the R1 and R2 comprise one selected from the group consisting of hydrogen, a methyl group, an ethyl group and an i-propyl group.
4. The zinc oxide precursor composition of claim 1 , wherein the zinc oxide precursor composition comprises a symmetric compound with the R1 and R2 being identical to each other, or comprises an asymmetric compound with the R1 and R2 being different from each other.
5. The zinc oxide precursor composition of claim 1 , comprising a zinc oxide precursor composition for use in atmospheric pressure chemical vapor deposition.