IP Library Granted Patent US 8,944,353
Granted Patent B2
US 8,944,353 · App. 13/431,005 · Granted Feb 3, 2015

Method for producing fractured fragments of polycrystalline silicon

Inventors: Shigeru Sato (Misawa, JP); Motoki Sato (Naka-gun, JP)
Assignee: Mitsubishi Materials Corporation
B02C4/08B02C23/12
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Quick Facts
Patent No.
US 8,944,353
App. No.
13/431,005
Granted
Feb 3, 2015
Kind
B2
Abstract

A method for producing fractured fragments of polycrystalline silicon having a fracturing process fracturing fragments of polycrystalline silicon between a pair of rolls which are rotated in a counter direction each other around parallel axes, in which: the rolls have a plurality of fracturing teeth protruding radially-outwardly from outer peripheral surfaces thereof; the fracturing teeth have spherical top surfaces and conical or cylindrical side surfaces; the fracturing process is performed in fracturing ratio of equal to or more than 1.0 to less than 1.5, and the fracturing ratio is specified by a maximum length of polycrystalline silicon before fracturing with respect to a facing distance between the top surfaces of the fracturing teeth at a facing part of the rolls.

Claims (13)

1. A method for producing fractured fragments of polycrystalline silicon comprising a step of

fracturing fragments of polycrystalline silicon between a pair of rolls which are rotated in a counter direction each other around parallel axes,

wherein:

the rolls have a plurality of fracturing teeth protruding radially-outwardly from outer peripheral surfaces thereof;

the fracturing teeth have semi-spherical top surfaces and conical or cylindrical side surfaces;

the fracturing step is performed in fracturing ratio of equal to or more than 1.0 to less than 1.5, and

the fracturing ratio is specified by a maximum length of polycrystalline silicon before fracturing with respect to a facing distance between the top surfaces of the fracturing teeth at a facing part of the rolls.

2. The method for producing fractured fragment of polycrystalline silicon according to claim 1 ,

performing a plurality of the fracturing step; and

sorting the fractured fragments of polycrystalline silicon obtained by the fracturing step by size between fracturing steps,

wherein

the large fractured fragments of polycrystalline silicon sorted by the sorting step are fractured by the fracturing step following the sorting step.

3. The method of producing fractured fragments of polycrystalline silicon according to claim 2 , wherein, in each of the fracturing steps, diameters and protruding heights of the fracturing teeth and gaps between the adjacent fracturing teeth are adjusted in accordance with the facing distance of the fracturing teeth.

Assignments (2)
SPLIT AND CHANGE OF NAME Recorded Jul 6, 2023
From: MITSUBISHI MATERIALS CORPORATION
To: HIGH-PURITY SILICON CORPORATION
Reel/Frame 064222/0720 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 27, 2012
From: SATO, SHIGERU; SATO, MOTOKI
To: MITSUBISHI MATERIALS CORPORATION
Reel/Frame 027934/0860 →
Priority Claims (1)
JP 2011-84063 · Apr 5, 2011 · national
Continuity (1)
Related Publication 20120256023A1 · Oct 11, 2012