Method for fabricating variable resistance memory device

1. A method for fabricating a variable resistance memory device, comprising:

sequentially forming a first conductive layer and a variable resistance layer on a substrate;

forming stacked structures in which first conductive lines and variable resistance lines are sequentially stacked by selectively etching the variable resistance layer and the first conductive layer;

forming an insulating layer to fill a space between the stacked structures;

forming a second conductive layer on the insulating layer and the stacked structures; and

forming a second conductive line and a variable resistance pattern by etching the second conductive layer and the variable resistance line using a mask pattern, wherein the mask pattern forms lines that extend in a direction crossing a direction that the stacked structures extend.

2. The method of claim 1 , further comprising: forming spacer layers on side walls of the stacked structures after the forming of the stacked structures.

3. The method of claim 1 , wherein the variable resistance layer includes a structure in which electric resistance is changed due to oxygen vacancy, migration of ions, or a phase change in materials or a magnetic tunnel junction structure in which electric resistance is changed due to magnetic field or spin transfer torque.

4. The method of claim 1 , further comprising: forming a selection device layer on a top or bottom portion of the variable resistance layer.

5. A method for fabricating a variable resistance memory device, comprising:

sequentially forming a first conductive layer for wiring, a first conductive layer for electrode, a variable resistance layer, and a second conductive layer for electrode on a substrate;

forming stacked structures in which a first wiring, a first electrode, a variable resistance line, and a second electrode are sequentially stacked by selectively etching the second conductive layer for electrode, the variable resistance layer, the first conductive layer for electrode, and the first conductive layer for wiring;

forming an insulating layer to fill a space between the stacked structures;

forming the second conductive layer for wiring on the insulating layer and the stacked structures; and

forming a second wiring, a second electrode pattern, and a variable resistance pattern by etching the second conductive layer for wiring, the second electrode, and the variable resistance line using a mask pattern, wherein the mask pattern forms lines that extend in a direction crossing a direction that the stacked structures extend.

6. The method of claim 5 , further comprising: forming spacer layers on side walls of the stacked structures after the forming of the stacked structures.

7. The method of claim 5 , wherein the variable resistance layer includes a structure in which electric resistance is changed due to oxygen vacancy, migration of ions, or a phase change in materials or a magnetic tunnel junction structure in which electric resistance is changed due to magnetic field or spin transfer torque.

8. The method of claim 5 , further comprising: forming a selection device layer on a top or bottom portion of the variable resistance layer.

9. A method for fabricating a variable resistance memory device, comprising:

sequentially forming a first conductive layer and a first variable resistance layer on a substrate;

forming first stacked structures in which first conductive lines and first variable resistance lines are sequentially stacked by selectively etching the first variable resistance layer and the first conductive layer;

forming a first insulating layer to fill a space between the first stacked structures;

sequentially forming a second conductive layer and a second variable resistance layer on the first insulating layer and the first stacked structure;

forming second stacked structures in which a first variable resistance pattern, a second conductive line, and a second variable resistance line are sequentially stacked by etching the second variable resistance layer, the second conductive layer, and the first variable resistance line using a mask pattern, wherein the mask pattern forms lines that extend in a direction crossing a direction that the first stacked structures extend;

forming a second insulating layer to fill a space between the second stacked structures; and

forming a third conductive layer on the second insulating layer and the second stacked structure.

10. The method of claim 9 , further comprising: forming spacer layers on side walls of the first or second stacked structures after the forming of the first or second stacked structures.

11. The method of claim 9 , wherein the first and second variable resistance layers include a structure in which electric resistance is changed due to oxygen vacancy, migration of ions, or a phase change in materials or a magnetic tunnel junction structure in which electric resistance is changed due to magnetic field or spin transfer torque.

12. The method of claim 9 , further comprising: forming a selection device layer on a top or bottom portion of the first or second variable resistance layer.

13. The method of claim 9 , further comprising:

forming a third variable resistance layer on the third conductive layer; and

forming third stacked structures in which a second variable resistance pattern, a third conductive line, and a third variable resistance line are sequentially stacked by etching the third variable resistance layer, the third conductive layer, and the second variable resistance line using a mask pattern, wherein the mask pattern forms lines that extend in a direction crossing a direction that the second stacked structures extend.