IP Library › Granted Patent US 8,946,749
Granted Patent B2
US 8,946,749 · App. 13/682,224 · Granted Feb 3, 2015

Semiconductor light emitting device

Inventor: Katsuji Iguchi (Osaka, JP)
Assignee: Sharp Kabushiki Kaisha
H01L33/60H01L33/58H01L2224/48091H01L2224/73265
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Quick Facts
Patent No.
US 8,946,749
App. No.
13/682,224
Granted
Feb 3, 2015
Kind
B2
Abstract

A semiconductor light emitting device includes a substrate having a wiring pattern formed thereon, and a semiconductor light emitting element mounted on one main surface of the substrate and electrically connected to the wiring pattern. The substrate has, on the one main surface, a serrated structure reflecting at least part of light emitted from said semiconductor light emitting element to the substrate, to a direction perpendicular to the one main surface.

Claims (28)

1. A semiconductor light emitting device, comprising:

a substrate provided with a wiring pattern; and

a semiconductor light emitting element mounted on a top surface of said substrate and electrically connected to said wiring pattern; wherein

said substrate has, on said top surface, a serrated structure for reflecting at least part of light, emitted from said semiconductor light emitting element to said substrate, in a direction perpendicular to said top surface so that said at least part of the light is reflected toward a side of the substrate on which the semiconductor light emitting element is mounted.

2. The semiconductor light emitting device according to claim 1 , wherein

said serrated structure includes a plurality of serrated structures positioned in concentric circular patterns with said semiconductor light emitting element being the center, when viewed two-dimensionally.

3. The semiconductor light emitting device according to claim 1 , wherein

said serrated structure includes a plurality of serrated structures positioned in concentric rectangular patterns with said semiconductor light emitting element being the center, when viewed two-dimensionally.

4. The semiconductor light emitting device according to claim 1 , wherein

said serrated structure includes a plurality of serrated structures positioned in concentric rectangular patterns on an inner side and in concentric circular patterns on an outer side, with said semiconductor light emitting element being the center, when viewed two-dimensionally.

5. The semiconductor light emitting device according to claim 1 , wherein

said substrate further has a reflector portion having a substantially rectangular outer shape when viewed two-dimensionally and surrounding an edge; and

said serrated structure includes a plurality of serrated structures extending in a direction perpendicular to the longitudinal direction of said substrate and positioned spaced from each other in said longitudinal direction.

6. The semiconductor light emitting device according to claim 5 , wherein

said serrated structures are further positioned in rectangular patterns to surround said semiconductor light emitting element.

7. The semiconductor light emitting element according to claim 1 , wherein

said serrated structure is positioned not to overlap with a position of connection between said wiring pattern and said semiconductor light emitting element.

8. The semiconductor light emitting device according to claim 1 , wherein

said serrated structure is formed apart by a distance at least 1 and at most 1.5 times the thickness of the semiconductor light emitting element, from a peripheral side surface of said semiconductor light emitting element.

9. The semiconductor light emitting device according to claim 8 , wherein

said serrated structure has a saw-tooth shape in transverse section, and has a plurality of inclinations serving as reflecting surfaces for reflecting light emitted from said semiconductor light emitting element; and

when H represents a thickness of said semiconductor light emitting element, L represents the shortest distance between a crossing line of the closest inclination closest to said semiconductor light emitting element among a plurality of inclinations and said one upper surface and the peripheral side surface of said semiconductor light emitting element, and θ represents an inner angle formed by the closest inclination and said one upper surface, said closest inclination satisfies the relation of 2θ=90°−tan −1 (H/L).

10. The semiconductor light emitting device according to claim 9 , wherein the relation of 30°≦θ≦45° is satisfied.

11. The semiconductor light emitting device according to claim 9 , wherein where Lp represents distance between vertexes of adjacent peaks, h represents height of the vertex, and θp represents an inner angle of the inclination positioned between each of the vertexes in the transverse section of said serrated structure, the relation of Lp=h/tan θp is satisfied.

12. The semiconductor light emitting device according to claim 1 wherein said serrated structure is formed of ceramic.

13. The semiconductor light emitting device according to claim 1 , wherein said serrated structure is formed of metal.

14. The semiconductor light emitting device according to claim 13 , wherein said serrated structure has its surface mirror-finished.

15. The semiconductor light emitting device according to claim 14 , wherein said serrated structure has its surface formed of silver.

Assignments (2)
NUNC PRO TUNC ASSIGNMENT Recorded Jul 19, 2020
From: SHARP KABUSHIKI KAISHA
To: LEDCOMM LLC
Reel/Frame 053247/0249 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 21, 2012
From: IGUCHI, KATSUJI
To: SHARP KABUSHIKI KAISHA
Reel/Frame 029337/0673 →
Priority Claims (1)
JP 2011-254128 · Nov 21, 2011 · national
Continuity (1)
Related Publication 20130126927A1 · May 23, 2013