On-die termination of address and command signals
A memory controller is disclosed. The memory controller is configured to be connected to one or more memory devices via an address and control (RQ) bus. Each of the memory devices have on-die termination (ODT) circuitry connected to a subset of signal lines of the RQ bus, and the memory controller is operable to selectively disable the ODT circuitry in at least one memory device of the one or more memory devices.
1. A memory controller configured to be connected to one or more memory devices via an address and control (RQ) bus, wherein:
each of the memory devices have on-die termination (ODT) circuitry connected to a subset of signal lines of the address and control (RQ) bus; and
the memory controller is operable to selectively disable the ODT circuitry in at least one memory device of the one or more memory devices by driving control signals on a plurality of ODT control lines.
2. The controller of claim 1 , wherein the memory controller is further operable to selectively enable the ODT circuitry in at least one memory device of the one or more memory devices.
3. The controller of claim 2 , wherein the one or more memory devices comprises a plurality of memory devices; and
the memory controller is further configured to simultaneously enable respective ODT circuitry in a first subset of the plurality of memory devices and disable respective ODT circuitry in a second subset of the plurality of memory devices.
4. The controller of claim 1 , wherein:
the RQ bus comprises the plurality of ODT control lines, which comprise control and address ODT (CAODT) signal lines; and
the memory controller selectively disables the ODT circuitry via the CAODT signal lines.
5. The controller of claim 1 , wherein the one or more memory devices are arranged in a fly-by topology.
6. The controller of claim 1 , wherein the ODT circuitry comprises a plurality of identical circuits and each of the identical circuits are connected to a corresponding one of the subset of signal lines.
7. The controller of claim 1 , wherein selectively disabling a respective ODT circuitry includes selectively disabling termination of a subset of the respective signal lines.
8. The controller of claim 7 , wherein the subset of the respective signal lines selectively disabled by the memory controller excludes clock signal lines.
9. The controller of claim 7 , wherein the subset of the respective signal lines selectively disabled by the memory controller includes address and bank address signal lines.
10. The controller of claim 7 , wherein the subset of the respective signal lines selectively disabled by the memory controller includes row address strobe, column address strobe, and write enable signal lines.
11. The controller of claim 1 , wherein the selectively disabled ODT circuitry consumes essentially zero power.
12. The controller of claim 1 , further operable to selectively terminate the subset of signal lines in the one or more memory devices with one of a plurality of different impedance values.
13. The controller of claim 12 , wherein the plurality of different impedance values includes a nominal impedance value, an alternate impedance value, and a high impedance value, wherein the high impedance value corresponds to a disabled termination.
14. The controller of claim 12 , wherein the memory controller is further configured to drive signals on the RQ bus after selectively terminating the subset of the signal lines with one of the plurality of different impedance values.
15. The controller of claim 12 , further configured to selectively terminate the subset of signal lines in the one or more memory devices with one of the plurality of different impedance values by driving the control signals on the plurality of ODT control lines.
16. The controller of claim 1 , wherein the signal lines of the RQ bus include command and clock signal lines, and the memory controller is configured to drive all or a subset of the signal lines of the RQ bus.
17. The controller of claim 1 , further operable to control one or more termination devices separate from the one or more memory devices.
18. The controller of claim 1 , further configured to selectively enable termination of a subset of signal lines in the RQ bus in accordance with memory operations performed by the memory controller.
19. The controller of claim 1 , further configured to selectively disable the ODT circuitry based on one or more operations currently being performed on the one or more memory devices.
20. The controller of claim 1 , wherein the ODT circuitry includes a plurality of parallel circuit legs, each respective circuit leg comprising a first switch coupled in series with a first resistor between a first power rail and a signal line termination node and a second switch coupled in series with a second resistor between a second power rail and the signal line termination node; and
the memory controller is further configured to control the operation of the first switch and the second switch.