Etched trenches in bond materials for die singulation, and associated systems and methods
Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.
1. A singulated LED die, comprising:
a semiconductor SST device having an N-type region at a first side, a P-type region at a second side facing away from the first side, and an active region between the N-type region and the P-type region, wherein the SST device includes an electrical contact at the first side;
a bond material attached to the second side of the SST device;
a carrier substrate attached to the bond material, the carrier substrate having an etched indentation; and
a protective material at least partially encapsulating the semiconductor SST device, wherein the protective material is adhered to sides of the etched indentation, wherein the etched indentation is only partially encapsulated by the protective material, and wherein the electrical contact is only partially encapsulated by the protective material.
2. The singulated LED die of claim 1 , further comprising a plurality of N-contacts connected to the N-type region.
3. The singulated LED die of claim 1 wherein the protective material is selected from a group consisting of polymers and epoxies.
4. The singulated LED die of claim 1 wherein the protective material is a transparent silicone-based material.
5. A singulated LED die, comprising:
a semiconductor SST device having an N-type region, a P-type region, and an active region between the N-type region and the P-type region, wherein the SST device includes an electrical contact at the N-type region;
a bond material attached to the P-type region;
a crystalline silicon carrier substrate directly attached to the bond material, the carrier substrate having an etched indentation; and
a protective material at least partially encapsulating the semiconductor SST device, wherein the protective material is adhered to sides of the etched indentation, wherein the etched indentation is only partially encapsulated by the protective material, and wherein the electrical contact is only partially encapsulated by the protective material.
6. A singulated LED die, comprising:
a semiconductor SST device having an N-type region, a P-type region, and an active region between the N-type region and the P-type region, wherein the SST device includes an electrical contact at the N-type region;
a bond material attached to the P-type region, wherein the bond material includes a sandwich arrangement with a first metal portion between two second metal portions;
a carrier substrate attached to the bond material, the carrier substrate having an etched indentation; and
a protective material at least partially encapsulating the semiconductor SST device, wherein the protective material is adhered to sides of the etched indentation, wherein the etched indentation is only partially encapsulated by the protective material, and wherein the electrical contact is only partially encapsulated by the protective material.