Hole formation method, multilayer wiring, semiconductor device, display element, image display device, and system containing via hole formed by the hole formation method
A hole formation method including applying a pillar-forming liquid to a base material, to thereby form a pillar; applying an insulating film-forming material to the base material on which the pillar has been formed, to thereby form an insulating film; removing the pillar to form an opening in the insulating film; and heat treating the insulating film in which the opening has been formed.
1. A hole formation method comprising:
applying a pillar-forming liquid to a base material, to thereby form a pillar;
applying an insulating film-forming material to the base material on which the pillar has been formed, to thereby form an insulating film;
removing the pillar by dissolving with a solution that dissolves the pillar to form an opening in the insulating film; and
heat treating the insulating film in which the opening has been formed, to deform the opening in the insulating film to a forward tapered shape.
2. The hole formation method according to claim 1 , wherein the pillar-forming liquid contains a resin and a solvent.
3. The hole formation method according to claim 1 , wherein the applying the pillar-funning liquid is performed by an electrostatic attraction type inkjet method.
4. The hole formation method according to claim 1 , wherein the applying the insulating film-forming material is applying the insulating film-forming material to the entire surface of the base material.
5. The hole formation method according to claim 1 , wherein the applying the insulating film-forming material is applying the insulating film-forming material on the base material in a line-and-space pattern and making the insulating film-forming material spread over the entire surface of the base material using flowability of the insulating film-forming material.
6. A hole formation method comprising:
applying a pillar-forming liquid to a base material, to thereby form a pillar;
applying an insulating film-forming material to the base material on which the pillar has been formed, to thereby form an insulating film;
removing the pillar to form an opening in the insulating film; and
heat treating the insulating film in which the opening has been formed,
wherein the pillar-forming liquid contains inorganic nanoparticles and a solvent.
7. The hole formation method according to claim 6 , wherein the applying the pillar-forming liquid is performed by an electrostatic attraction type inkjet method.
8. The hole formation method according to claim 6 , wherein the applying the insulating film-forming material is applying the insulating film-forming material to the entire surface of the base material.
9. The hole formation method according to claim 6 , wherein the applying the insulating film-forming material is applying the insulating film-forming material on the base material in a line-and-space pattern and making the insulating film-forming material spread over the entire surface of the base material using flowability of the insulating film-forming material.