Image sensors

1. An image sensor comprising:

a first substrate including a logic circuit;

a first insulation layer on the first substrate and on the logic circuit;

a second substrate including a photoelectric conversion element;

a second insulation layer on the second substrate and on the photoelectric conversion element, wherein a lower surface of the second insulation layer is in direct physical contact with an upper surface of the first insulation layer;

a first conductive connector in a first via hole that extends through the first and second insulation layers; and

a second conductive connector in a second via hole that extends through the first and second insulation layers, wherein each of the first and second via holes are provided as a respective single continuous via hole which extends through both the first and second insulation layers;

wherein the first conductive connector is electrically connected to a first part of the photoelectric conversion element and the logic circuit and the second conductive connector is electrically connected to a second part of the photoelectric conversion element.

2. The image sensor of claim 1 , wherein the photoelectric conversion element comprises a photodiode, a transfer transistor and a floating diffusion region.

3. The image sensor of claim 2 , wherein a gate of the transfer transistor is electrically connected to the first conductive connector.

4. The image sensor of claim 2 , wherein the floating diffusion region is electrically connected to the second conductive connector.

5. The image sensor of claim 4 , wherein the first substrate further includes a driving transistor and a gate of the driving transistor is electrically connected to the second conductive connector.

6. The image sensor of claim 4 , further comprising a first wiring pattern between the first substrate and the first insulation layer and a second wiring pattern between the second substrate and the second insulation layer,

wherein the second wiring pattern is electrically connected to the floating diffusion region, and the first wiring pattern is electrically connected to the first conductive connector.

7. The image sensor of claim 1 , wherein the first conductive connector and the second conductive connector extend into the second substrate.

8. The image sensor of claim 7 , further comprising a third insulation layer configured to insulate the first conductive connector and the second conductive connector from the second substrate.

9. The image sensor of claim 1 , wherein the second substrate has a thickness less than about 7000Å.

10. The image sensor of claim 1 , wherein the first conductive connector is partially filled in the first via hole and an insulation material is deposited in the first via hole above the first conductive connector to be extended into the second substrate, and

wherein the second conductive connector is partially filled in the second via hole and an insulation material is deposited in the second via hole above the second conductive connector to be extended into the second substrate.

11. The image sensor of claim 1 , wherein the photoelectric conversion element comprises a floating diffusion region, a first photodiode , a first transfer transistor, a second photodiode and a second transfer transistor, wherein the floating diffusion region is coupled to the first transfer transistor and the second transfer transistor.

12. The image sensor of claim 1 , wherein the logic circuit includes at least one of a timing generator, a row decoder, a row driver, a correlated double sampler (CDS), an analog to digital converter (ADC), a latch unit and a column decoder.

13. The image sensor of claim 1 , further comprising a layer under the second substrate, the layer including at least one of silicon nitride, silicon oxynitride, tantalum oxide, titanium oxide and hafnium oxide.

14. The image sensor of claim 13 , wherein the layer prevents an incident light from reflecting on a surface of the second substrate.

15. The image sensor of claim 13 , wherein the layer has thickness in a range of several tens of angstroms up to several hundreds of angstroms.

16. The image sensor of claim 1 , wherein the second substrate has a front surface and a back surface, and

wherein the photoelectric conversion element receives an incident light passing through the back surface of the second substrate, and the second insulation layer disposes above the front surface of the second substrate.