Infrared light sensor having a high signal voltage and a high signal/noise ratio
An infrared light sensor for an infrared light detector ( 1 ), including a substrate membrane section ( 2 ) and at least two sensor chips ( 7 to 10 ), which are fastened next to each other on the substrate membrane section ( 2 ) and each comprise a layer element ( 11 ) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode ( 12 ) and a head electrode ( 13 ) and is arranged in such that there is a voltage difference in each case between the head electrode ( 13 ) and the base electrode ( 12 ) of each layer element ( 11 ) when the layer elements ( 11 ) are irradiated with infrared light; and a coupling line ( 14 to 16 ) in each case for two adjacently arranged sensor chips ( 7 to 10 ), the coupling line coupling the head electrode ( 13 ) of the one sensor chip ( 7 to 9 ) and the base electrode ( 12 ) of the other sensor chip ( 8 to 10 ) to each other in an electrically conductive manner so that the layer elements ( 11 ) of the sensor chips ( 7 to 10 ) are connected in a series circuit, which has one of the base electrodes ( 17 ) at one end thereof and one of the head electrodes ( 18 ) at the other end thereof, at which a total voltage difference of the series circuit can be tapped as the sum of the individual voltage differences of the layer elements ( 11 ).
1. An infrared light detector comprising:
a substrate membrane;
one or more infrared light sensors, each of the sensors comprising a respective segment of the substrate membrane and at least two sensor chips; and
one or more electronic readout components, each of the components respectively associated with a given one of the sensors;
wherein each of the sensor chips comprises:
(a) a layer element consisting essentially of pyroelectrically sensitive material,
(b) a base electrode and a head electrode each electrically contacting the layer element and configured such that exposure of at least a part of the layer element to infrared light produces an individual voltage difference between the head electrode and the base electrode, and
(c) a coupling line,
wherein the at least two sensor chips are attached physically adjacent one another on the substrate membrane segment and are electrically interconnected in a series circuit by the coupling line such that the head electrode of a first of the sensor chips and the base electrode of a last of the sensor chips are electrically interconnected,
wherein the series circuit is electrically connected to a respective one of the electronic readout components with one of the base electrodes and with one of the head electrodes, to provide a total voltage difference of the series circuit as a sum of the individual voltage differences of the respective layer elements of the sensor chips for a respective one of the infrared light sensors, and
wherein a total capacitance value of the series circuit is at least three times an input capacitance value of a respective one of the electronic readout components.
2. The infrared light detector according to claim 1 , wherein the pyroelectrically sensitive material is lead-zirconate-titanate.
3. The infrared light detector according to claim 1 , wherein the layer element is a thin film.
4. The infrared light detector according to claim 1 , wherein the sensor chips are thermally conductively connected via the substrate membrane segment and the coupling line.
5. The infrared light detector according to claim 1 , wherein the infrared light sensors are arranged in a grid arrangement on the substrate membrane.
6. The infrared light detector according to claim 1 , wherein the infrared light sensors are arranged so as to be thermally insulated from one another.
7. The infrared light detector according to claim 1 , configured to be housed in at least one of a thermal imaging camera, a presence sensor, a motion sensor, a gas detector, a spectroscope and a terahertz detector.