IP Library Granted Patent US 8,976,933
Granted Patent B2
US 8,976,933 · App. 13/246,008 · Granted Mar 10, 2015

Method for spatially modulating X-ray pulses using MEMS-based X-ray optics

Inventors: Daniel Lopez (Chicago, IL); Gopal Shenoy (Naperville, IL); Jin Wang (Burr Ridge, IL); Donald A. Walko (Woodridge, IL); Il-Woong Jung (Woodridge, IL); Deepkishore Mukhopadhyay (Chicago, IL)
Assignee: UChicago Argonne, LLC
G21K1/06G21K1/067
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Quick Facts
Patent No.
US 8,976,933
App. No.
13/246,008
Granted
Mar 10, 2015
Kind
B2
Abstract

A method and apparatus are provided for spatially modulating X-rays or X-ray pulses using microelectromechanical systems (MEMS) based X-ray optics. A torsionally-oscillating MEMS micromirror and a method of leveraging the grazing-angle reflection property are provided to modulate X-ray pulses with a high-degree of controllability.

Claims (34)

1. A method for spatially modulating X-rays or X-ray pulses using MicroElectroMechanical systems (MEMS) X-ray optics comprising:

providing a MEMS micromirror surface;

providing incident X-rays on the MEMS micromirror surface at a set angle of incidence includes providing a pulse train dispersion including incident temporally dispersed X-ray pulses on the MEMS micromirror surface;

providing a mirror frequency for controllably modulating the incident X-rays; and

providing an area detector receiving spatially separated X-ray pulse positions from controllably modulating the incident X-ray pulses.

2. The method as recited in claim 1 wherein providing incident X-rays on the MEMS micromirror surface at said set angle of incidence includes providing said set angle of incidence for reflecting the incident X-rays.

3. The method as recited in claim 1 wherein providing incident X-rays on the MEMS micromirror surface at said set angle of incidence includes providing said set angle of incidence less than a critical angle θ c said critical angle θ c based upon a given X-ray wavelength and a MEMS micromirror surface material.

4. The method as recited in claim 1 wherein providing said MEMS micromirror surface includes providing a torsional mirror.

5. The method as recited in claim 1 wherein providing said MEMS micromirror surface includes providing said MEMS micromirror being fabricated on a single-crystal-silicon (SCS) device layer of a Silicon-On-Insulator (SOI) wafer.

6. The method as recited in claim 1 wherein providing said MEMS micromirror surface includes providing said MEMS micromirror including a respective pair of torsional hinges.

7. The method as recited in claim 1 wherein providing said MEMS micromirror surface includes providing said MEMS micromirror including a respective pair of comb-drive actuators.

8. The method as recited in claim 1 wherein providing said mirror frequency for controllably modulating the incident X-rays includes changing pulse intensity and duration by providing a selected mirror frequency.

9. The method as recited in claim 1 wherein providing incident X-rays on the MEMS micromirror surface at said set angle of incidence includes changing pulse intensity and duration by providing a selected angle of incidence.

10. A method for spatially modulating X-rays or X-ray pulses using MicroElectroMechanical systems (MEMS) X-ray optics comprising:

providing a MEMS micromirror surface;

providing incident X-rays on the MEMS micromirror surface at a set angle of incidence includes providing a short pulse dispersion including a single X-ray pulse on the MEMS micromirror surface;

providing a mirror frequency for controllably modulating the incident X-rays; and

providing an area detector receiving a spatially spread X-ray pulse position from controllably modulating the incident short X-ray pulse.

11. The method as recited in claim 10 wherein said single X-ray pulse includes a pulse duration of approximately 100 picosecond (ps).

12. An apparatus for spatially modulating X-rays or X-ray pulses using MicroElectroMechanical systems (MEMS) X-ray optics comprising:

a MEMS micromirror including a MEMS micromirror surface;

an X-ray source providing incident X-rays on the MEMS micromirror surface at a set angle of incidence; and

said MEMS micromirror including a mirror frequency, said set angle of incidence of the incident X-rays and said mirror frequency being provided for controllably modulating the incident X-rays; and

said micromirror providing a pulse train dispersion, wherein said X-ray source providing incident temporally dispersed X-ray pulses on the MEMS micromirror surface; and an area detector receiving spatially separated X-ray pulse positions from controllably modulating the incident X-ray pulses.

13. The apparatus as recited in claim 12 wherein said MEMS micromirror is fabricated on a single-crystal-silicon (SCS) device layer of a Silicon-On-Insulator (SOI) wafer.

14. The apparatus as recited in claim 12 wherein said MEMS micromirror includes a respective pair of torsional hinges.

15. The apparatus as recited in claim 12 wherein said MEMS micromirror includes a respective pair of comb-drive actuators.

16. The apparatus as recited in claim 12 wherein said set angle of incidence includes a set angle of incidence less than a critical angle θ c and said critical angle θ c being based upon a given X-ray wavelength and a MEMS micromirror surface material.

17. The apparatus as recited in claim 12 wherein said MEMS micromirror includes a torsional oscillating mirror.

18. An apparatus for spatially modulating X-rays or X-ray pulses using MicroElectroMechanical systems (MEMS) X-ray optics comprising:

a MEMS micromirror including a MEMS micromirror surface;

an X-ray source providing incident X-rays on the MEMS micromirror surface at a set angle of incidence;

said MEMS micromirror including a mirror frequency, said set angle of incidence of the incident X-rays and said mirror frequency being provided for controllably modulating the incident X-rays; and

said micromirror providing a short pulse dispersion, wherein said X-ray source providing a single X-ray pulse on the MEMS micromirror surface; and an area detector receiving a spatially spread X-ray pulse position from controllably modulating the incident short X-ray pulse.

Assignments (2)
CONFIRMATORY LICENSE Recorded Sep 10, 2012
From: UCHICAGO ARGONNE, LLC
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 028949/0940 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2011
From: LOPEZ, OMAR DANIEL; SHENOY, GOPAL; WANG, JIN; WALKO, DONALD A.; JUNG, IL-WOONG; MUKHOPADHYAY, DEEPKISHORE
To: UCHICAGO ARGONNE, LLC
Reel/Frame 027313/0664 →
Continuity (1)
Related Publication 20130077759A1 · Mar 28, 2013