Production method for spectroscopic sensor
A method for manufacturing a spectroscopic sensor 1 comprises a first step of forming a cavity layer 21 by etching a surface layer disposed on a handle substrate, a second step of forming a first mirror layer 22 on the cavity layer 21 after the first step, a third step of joining a light-transmitting substrate 3 onto the first mirror layer 22 after the second step, a fourth step of removing the handle substrate from the cavity layer 21 after the third step, a fifth step of forming a second mirror layer 23 on the cavity layer 21 devoid of the handle substrate after the fourth step, and a sixth step of joining a light-detecting substrate 4 onto the second mirror layer after the fifth step.
1. A method for manufacturing a spectroscopic sensor comprising an interference filter unit, having a cavity layer and first and second mirror layers opposing each other through the cavity layer, for selectively transmitting therethrough light in a predetermined wavelength range according to an incident position thereof; a light-transmitting substrate for transmitting therethrough light incident on the interference filter unit; and a light-detecting substrate for detecting the light transmitted through the interference filter unit; the method comprising:
a first step of forming the cavity layer by etching a surface layer disposed on a handle substrate;
a second step of forming the first mirror layer on the cavity layer after the first step;
a third step of joining the light-transmitting substrate onto the first mirror layer after the second step;
a fourth step of removing the handle substrate from the cavity layer after the third step;
a fifth step of forming the second mirror layer on the cavity layer devoid of the handle substrate after the fourth step; and
a sixth step of joining the light-detecting substrate onto the second mirror layer after the fifth step.
2. A method for manufacturing a spectroscopic sensor according to claim 1 , wherein, before the first step, a silicon oxide film is formed on one of main faces of the handle substrate made of silicon, and the silicon oxide film is employed as the surface layer.
3. A method for manufacturing a spectroscopic sensor according to claim 1 , wherein, before the first step, both main faces of a silicon substrate are thermally oxidized so as to form silicon oxide films on both main faces of the handle substrate made of silicon, and the silicon oxide film formed on one of the main faces of the handle substrate is employed as the surface layer.
4. A method for manufacturing a spectroscopic sensor according to claim 1 , wherein an optical filter layer for transmitting therethrough light in the predetermined wavelength range is formed on the light-transmitting substrate before the third step; and
Wherein, in the third step, the light-transmitting substrate is joined onto the first mirror layer such that the first mirror layer and the optical filter layer oppose each other.