Organic light emitting diode display and method for manufacturing the same

1. An organic light emitting diode display, comprising:

a substrate;

a plurality of pixel electrodes comprising first, second and third pixel electrodes on the substrate;

a first light emitting auxiliary layer on the pixel electrodes, the first light emitting auxiliary layer comprising:

a first common doped layer on the first, second and third pixel electrodes,

a first buffer layer, and

at least one second doped layer on at least one of the first pixel electrode, the second pixel electrode, and the third pixel electrode, wherein when the at least one second doped layer comprises a plurality of second doped layers on more than one of the first, second and third pixel electrodes, the plurality of second doped layers are spaced apart from each other;

an organic light emitting layer on the first light emitting auxiliary layer, the organic light emitting layer including a first light emitting layer, a second light emitting layer, and a third light emitting layer; and

a common electrode on the organic light emitting layer.

2. The organic light emitting diode display of claim 1 , wherein the first light emitting auxiliary layer includes at least one of a hole injection layer and a hole transporting layer.

3. The organic light emitting diode display of claim 1 , wherein the first buffer layer includes at least one of a hole injection layer and a hole transporting layer.

4. The organic light emitting diode display of claim 1 , further comprising:

a second light emitting auxiliary layer between the organic light emitting layer and the common electrode.

5. The organic light emitting diode display of claim 4 , wherein the second light emitting auxiliary layer includes at least one of an electron transporting layer and an electron injection layer.

6. The organic light emitting diode display of claim 1 , further comprising:

a second buffer layer between the second doped layers and the organic light emitting layer.

7. The organic light emitting diode display of claim 6 , wherein the second buffer layer includes at least one of a hole injection layer and a hole transporting layer.

8. The organic light emitting diode display of claim 1 , wherein the second doped layers are disposed on the first pixel electrode, the second pixel electrode, and the third pixel electrode.

9. The organic light emitting diode display of claim 8 , wherein a height of the first buffer layer on the first pixel electrode, a height of the first buffer layer on the second pixel electrode, and a height of the first buffer layer on the third pixel electrode are different from each other.

10. The organic light emitting diode display of claim 1 , wherein the second doped layers are formed on two of the first pixel electrode, the second pixel electrode, and the third pixel electrode.

11. The organic light emitting diode display of claim 10 , wherein distances between the first doped layer and the second doped layers are different from each other.

12. The organic light emitting diode display of claim 1 , wherein the second doped layer is on one of the first pixel electrode, the second pixel electrode, and the third pixel electrode.

13. The organic light emitting diode display of claim 1 , wherein each of the first light emitting layer, the second light emitting layer, and the third light emitting layer is any one of a red light emitting layer, a green light emitting layer, and a blue light emitting layer.

14. The organic light emitting diode display of claim 1 , wherein the first doped layer includes a p-doped material.

15. The organic light emitting diode display of claim 1 , wherein a thickness of the first doped layer is about 10 to about 200 Å.

16. The organic light emitting diode display of claim 1 , wherein the second doped layer includes a p-doped material.

17. The organic light emitting diode display of claim 1 , wherein the second doped layer includes at least one of hexanitrile hexaazatriphenylene, tetrafluoro-tetracyanoquinodimethane (F 4 -TCNQ), lithium quinolate (LiQ), FeCl 3 , F 16 CuPc, a compound represented by the following Formula 1, or a metal oxide:

18. The organic light emitting diode display of claim 17 , wherein the second doped layer includes a metal oxide selected from vanadium oxide (V 2 O 5 ), rhenium oxide (Re 2 O 7 ), and indium tin oxide (ITO).

19. The organic light emitting diode display of claim 1 , wherein a thickness of the second doped layer is about 10 to about 200 Å.

20. The organic light emitting diode display of claim 1 , wherein a thickness of the second doped layer is about 20 to about 80 Å.

21. The organic light emitting diode display of claim 1 , wherein the plurality of pixel electrodes are divided into pixel units by a pixel defining layer.

22. The organic light emitting diode display of claim 1 , wherein the pixel electrodes define a positive electrode and the common electrode is a negative electrode.

23. The organic light emitting diode display of claim 1 , wherein the common electrode has a light transmitting property.

24. A method for manufacturing an organic light emitting diode display, comprising: forming a plurality of pixel electrodes on a substrate comprising forming a first pixel electrode, a second pixel electrode, and a third pixel electrode;

forming a first light emitting auxiliary layer on the pixel electrodes comprising forming a first common doped layer on the first, second and third pixel electrodes, forming a first buffer layer, and forming at least one second doped layer, wherein the at least one second doped layer is formed on at least one of the first pixel electrode, the second pixel electrode, and the third pixel electrode and when the at least one second doped layer is formed on more than one of the first, second and third pixel electrodes, the second doped layers are spaced apart from each other;

forming an organic light emitting layer on the first light emitting auxiliary layer comprising forming a first light emitting layer, forming a second light emitting layer, and forming a third light emitting layer; and

forming a common electrode on the organic light emitting layer.

25. The method of claim 24 , wherein the forming of the first light emitting auxiliary layer includes at least one of forming a hole injection layer and forming a hole transporting layer.

26. The method of claim 24 , wherein the forming of the first buffer layer includes at least one of forming a hole injection layer and forming a hole transporting layer.

27. The method of claim 24 , further comprising:

forming a second light emitting auxiliary layer between the organic light emitting layer and the common electrode.

28. The method of claim 27 , wherein the forming of the second light emitting auxiliary layer includes at least one of forming an electron transporting layer and forming an electron injection layer.

29. The method of claim 27 , further comprising:

forming a second buffer layer between the second doped layer and the organic light emitting layer.

30. The method of claim 29 , wherein the forming of the second buffer layer includes at least one of forming a hole injection layer and forming a hole transporting layer.

31. The method of claim 24 , wherein the second doped layers are formed on the first pixel electrode, the second pixel electrode, and the third pixel electrode.

32. The method of claim 24 , wherein a height of the first buffer layer formed on the first pixel electrode, a height of the first buffer layer formed on the second pixel electrode, and a height of the first buffer layer formed on the third pixel electrode are different from each other.

33. The method of claim 24 , wherein the second doped layers are formed on two of the first pixel electrode, the second pixel electrode, and the third pixel electrode.

34. The organic light emitting diode display of claim 33 , wherein distances between the first doped layer and the second doped layers are different from each other.

35. The method of claim 24 , wherein the second doped layer is formed on one of the first pixel electrode, the second pixel electrode, and the third pixel electrode.

36. The method of claim 24 , wherein each of the first light emitting layer, the second light emitting layer, and the third light emitting layer is any one of a red light emitting layer, a green light emitting layer, and a blue light emitting layer.

37. The method of claim 24 , wherein the first doped layer includes a p-doped material.

38. The method of claim 24 , wherein a thickness of the first doped layer is about 10 to about 200 Å.

39. The method of claim 24 , wherein the second doped layer includes a p-doped material.

40. The method of claim 24 , wherein the second doped layer includes at least one of hexanitrile hexaazatriphenylene, tetrafluoro-tetracyanoquinodimethane (F 4 -TCNQ), lithium quinolate (LiQ), FeCl 3 , F 16 CuPc, a compound represented by the following Formula 1, or a metal oxide:

41. The method of claim 40 , wherein the second doped layer comprises a metal oxide selected from vanadium oxide (V 2 O 5 ), rhenium oxide (Re 2 O 7 ), and indium tin oxide (ITO).

42. The method of claim 24 , wherein a thickness of the second doped layer is about 10 to about 200 Å.

43. The method of claim 24 , wherein a thickness of the second doped layer is about 20 to about 80 Å.

44. The method of claim 24 , wherein the plurality of pixel electrodes are divided into pixel units by a pixel defining layer.

45. The method of claim 24 , wherein the pixel electrodes define a positive electrode and the common electrode is a negative electrode.

46. The method of claim 24 , wherein the common electrode has a light transmitting property.