Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same
A polycrystalline ferroelectric and/or multiferroic oxide article includes a substrate having a biaxially textured surface; at least one biaxially textured buffer layer supported by the substrate; and a biaxially textured ferroelectric or multiferroic oxide layer supported by the buffer layer. Methods for making polycrystalline ferroelectric and/or multiferroic oxide articles are also disclosed.
1. A polycrystalline multiferroic device article comprising:
a. a substrate having a biaxially textured surface;
b. a biaxially textured buffer layer supported by and in contact with the substrate; and,
c. a biaxially textured, multiferroic device layer supported by and in contact with the buffer layer.
2. The device article of claim 1 , wherein the biaxially textured multiferroic device layer comprises at least one selected from the group consisting of multiferroic rare-earth manganites and ferrites and bismuth ferrites and manganites.
3. The device article of claim 1 , wherein the biaxially textured multiferroic device layer comprises at least one selected from the group consisting of TbMnO 3 , HoMn 2 O 5 , LuFe 2 O 4 , BiFeO 3 and BiMnO 3 .
4. The device article of claim 1 , further comprising a conducting layer in contact with the biaxially textured multiferroic device layer.
5. The device article of claim 4 , wherein the conducting layer is SrRuO 3 .
6. The device article of claim 1 , wherein the orientation of the multiferroic device layer is selected from the group consisting of (111), (101), and (001).
7. The device article of claim 1 , wherein the buffer layer comprises Y 2 O 3 .
8. The device article of claim 7 , wherein the buffer layer further comprises a YSZ layer on the Y 2 O 3 layer.
9. The device article of claim 8 , wherein the buffer layer further comprises a CeO 2 layer on the YSZ layer.
10. The device article of claim 9 , wherein the buffer layer further comprises a BiFeO 3 seed layer on the CeO 2 layer.
11. The device article of claim 1 , wherein the buffer layer comprises MgO.
12. The device article of claim 1 , wherein the article is selected from the group consisting of a high-density flexible data storage device, an actuator, a switch, and a magnetic field sensor.
13. The device article of claim 1 , wherein the article is a non-volatile memory device.
14. The device article of claim 1 , wherein said substrate is a RABiTS.
15. The device article of claim 1 , wherein said substrate is an ion beam assisted deposition (IBAD) substrate.
16. The device article of claim 1 , wherein the substrate is an inclined-substrate deposition (ISD) substrate.
17. A method for making a polycrystalline multiferroic oxide article comprising:
a. a substrate having a biaxially textured surface;
b. a biaxially textured buffer layer supported by and in contact with the substrate; and,
c. a biaxially textured, multiferroic device layer supported by and in contact with the buffer layer,
the method comprising the steps of:
a. providing a substrate having a biaxially textured surface;
b. depositing at least one biaxially textured buffer layer such that the buffer layer is supported by the substrate; and,
c. depositing a biaxially textured multiferroic oxide layer so as to be supported on the buffer layer.
18. The method of claim 17 , wherein the biaxially textured multiferroic oxide layer comprises at least one selected from the group consisting of multiferroic rare-earth manganites and ferrites and bismuth ferrites and manganites.
19. The method of claim 17 , wherein the biaxially textured multiferroic oxide layer comprises at least one selected from the group consisting of TbMnO 3 , HoMn 2 O 5 , LuFe 2 O 4 , BiFeO 3 and BiMnO 3 .
20. The method of claim 17 , further comprising the step of depositing a conducting layer that is in contact with the multiferroic oxide layer.
21. The method of claim 17 , wherein the conducting layer is supported by the multiferroic oxide layer.
22. The method of claim 21 , wherein the conducting layer is SrRuO 3 .
23. The method of claim 17 , wherein the substrate is formed by a RABiTS process.
24. The method of claim 17 , wherein the substrate is formed by ion beam assisted deposition (IBAD) process.
25. The method of claim 17 , wherein the substrate is formed by inclined-substrate deposition (ISD) process.
26. The method of claim 17 , wherein an SrRuO 3 layer is deposited such that the SrRuO 3 is supported by the buffer layer; and depositing a top layer of biaxially textured BiFeO 3 such that the BiFeO 3 is supported by the SrRuO 3 layer.
27. A polycrystalline multiferroic device article comprising:
a. a substrate having a biaxially textured surface;
b. a set of (100) oriented, biaxially textured buffer layer(s) supported by and in contact with the substrate selected from a group comprising Y 2 O 3 , YSZ, CeO 2 , MgO, SrRuO 3 ; and,
c. a (100), biaxially textured, multiferroic device layer supported by and in contact with the buffer layer(s) selected from a group comprising BaTiO 3 , PbTiO 3 , (PZT), and (PLZT), (PMN), KNbO 3 , K x Na 1-x NbO 3 , and K(Ta x Nb 1-x )O 3 , TbMnO 3 , HoMn 2 O 5 , LuFe 2 O 4 , BiFeO 3 and BiMnO 3 .
28. A polycrystalline multiferroic device article comprising:
a. a substrate having a biaxially textured surface;
b. a set of (100) oriented, biaxially textured buffer layer(s) supported by and in contact with the substrate selected from a group comprising Y 2 O 3 , YSZ, CeO 2 , MgO, SrRuO 3 ; and,
c. a (110), uniaxially oriented, multiferroic device layer supported by and in contact with the buffer layer(s) selected from a group comprising BaTiO 3 , PbTiO 3 , (PZT), and (PLZT), (PMN), KNbO 3 , K x Na 1-x NbO 3 , and K(Ta x Nb 1-x )O 3 , TbMnO 3 , HoMn 2 O 5 , LuFe 2 O 4 , BiFeO 3 and BiMnO 3 .
29. A polycrystalline multiferroic device article comprising:
a. a substrate having a biaxially textured surface;
b. a set of biaxially textured buffer layer(s) supported by and in contact with the substrate selected from a group comprising Y 2 O 3 , YSZ, CeO 2 , MgO, SrRuO 3 ; and,
c. a (111), uniaxially oriented, multiferroic device layer supported by and in contact with the buffer layer(s) selected from a group comprising BaTiO 3 , PbTiO 3 , (PZT), and (PLZT), (PMN), KNbO 3 , K x Na 1-x NbO 3 , and K(Ta x Nb 1-x )O 3 , TbMnO 3 , HoMn 2 O 5 , LuFe 2 O 4 , BiFeO 3 and BiMnO 3 .
30. A polycrystalline multiferroic device article comprising:
a. a substrate having a biaxially textured surface;
b. a set of (100) oriented, biaxially textured buffer layer(s) supported by and in contact with the substrate selected from a group comprising Y 2 O 3 , YSZ, CeO 2 , MgO, SrRuO 3 ; and,
c. a (100), biaxially textured, BiFeO 3 multiferroic device layer supported by and in contact with the buffer layer(s);
d. said BiFeO 3 layer having a similar in-plane and out-of-plane polarization.
31. A polycrystalline multiferroic device article comprising:
a. a substrate having a biaxially textured surface;
b. a set of (100) oriented, biaxially textured buffer layer(s) supported by and in contact with the substrate selected from a group comprising Y 2 O 3 , YSZ, CeO 2 , MgO, SrRuO 3 ; and,
c. a (110), biaxially textured, BiFeO 3 multiferroic device layer supported by and in contact with the buffer layer(s);
d. said BiFeO 3 layer having a higher out-of-plane polarization that the in-plane polarization.
32. A polycrystalline multiferroic device article comprising:
a. a substrate having a biaxially textured surface;
b. a set of (100) oriented, biaxially textured buffer layer(s) supported by and in contact with the substrate selected from a group comprising Y 2 O 3 , YSZ, CeO 2 , MgO, SrRuO 3 ; and,
c. a (111), biaxially textured, BiFeO 3 multiferroic device layer supported by and in contact with the buffer layer(s);
d. said BiFeO 3 layer having no in-plane polarization and a very high out-of-plane polarization.