Semiconductor device and method for fabricating the same
A semiconductor device includes a first isolation layer formed in a trench in a substrate. The isolation layer includes a first oxide layer formed in the trench and a second oxide layer formed over the first oxide layer, wherein the first oxide layer and the second oxide layer have a same composition.
1. A semiconductor device comprising:
a first isolation layer formed in a first trench having a first critical dimension (CD) in a substrate, the isolation layer comprising:
a first oxide layer formed in the first trench; and
a second oxide layer formed over the first oxide layer,
wherein the first oxide layer and the second oxide layer have a same composition, and
wherein the first oxide layer has a thickness greater than a thickness of the second oxide layer; and
a second trench formed in the substrate, the second trench having a second CD larger than the first CD,
wherein the second trench comprises:
a fourth oxide layer formed in the second trench;
a fifth oxide layer formed over the fourth oxide layer; and
a sixth nitride layer formed over the fifth oxide layer to fill the second trench.
2. The semiconductor device of claim 1 , further comprising:
a third oxide layer formed between the first trench and the first oxide layer.
3. The semiconductor device of claim 1 , further comprising:
a nitride layer over the fifth oxide layer to fill the second trench.
4. The semiconductor device of claim 1 , wherein the second oxide layer completely fills the trench and the fifth oxide layer only partially fills the second trench.
5. The semiconductor device of claim 1 , wherein the first isolation layer isolates a plurality of active regions formed in a cell region of a memory device.
6. A semiconductor device comprising:
a substrate comprising first and second regions;
a first trench formed in the first region of the substrate, the first trench having a first critical dimension (CD);
a second trench formed in the second region of the substrate, the second trench having a second CD;
an isolation layer formed in the first trench and in the second trench, the isolation layer comprising:
a first oxide layer formed in the first trench and in the second trench;
a second oxide layer, having a same composition as the first oxide layer and formed on the first oxide layer, wherein the second oxide layer completely fills the first trench and the first oxide layer only partially fills the second trench;
a nitride layer formed in the second trench over the second oxide layer, the nitride layer partially filling the second trench;
a third oxide layer formed between the first trench and the first oxide layer and between the second trench and the first oxide layer; and
a fourth oxide layer formed in the nitride layer, the fourth oxide layer completely filling the second trench,
wherein the first oxide layer has a greater thickness than a thickness of the second oxide layer.
7. The semiconductor device of claim 6 , wherein the isolation layer isolates a plurality of active regions formed in a cell region of a memory device.