Semiconductor device having oxide semiconductor transistor
It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.
1. A semiconductor device comprising:
a first conductive layer over a substrate;
a first insulating layer over the first conductive layer;
an oxide semiconductor layer over the first insulating layer and overlapping with the first conductive layer, the oxide semiconductor layer including a channel region, wherein the first conductive layer is overlapped with the channel region;
a second conductive layer in contact with the oxide semiconductor layer;
a third conductive layer in contact with the oxide semiconductor layer;
a second insulating layer over the oxide semiconductor layer, the second conductive layer and the third conductive layer; and
a fourth conductive layer over the second insulating layer and overlapping with the channel region,
wherein the fourth conductive layer overlaps the second conductive layer and the third conductive layer,
wherein the oxide semiconductor layer comprises a first region and a second region, the first region being located over the second region;
wherein the first region comprises a crystal, and a c-axis of the crystal is substantially perpendicular to the second insulating layer,
wherein the second region has a lower crystallinity than the first region, and
wherein all the metal elements included in the first region are included in the second region, and all the metal elements included in the second region are included in the first region.
2. The semiconductor device according to claim 1 , wherein a region except a region comprising the crystal in the oxide semiconductor layer includes an amorphous structure.
3. The semiconductor device according to claim 1 , wherein the first region in the oxide semiconductor layer contains a crystal of In 2 Ga 2 ZnO 7 .
4. The semiconductor device according to claim 1 , wherein one of the second conductive layer and the third conductive layer is electrically connected to the oxide semiconductor layer on an upper surface or a lower surface of the oxide semiconductor layer.
5. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer contains an In—Ga—Zn—O-based oxide semiconductor material.
6. The semiconductor device according to claim 1 , wherein the second conductive layer and the third conductive layer function as one of a source electrode and a drain electrode and the other of the source electrode and the drain electrode, respectively.
7. The semiconductor device according to claim 1 , wherein an upper surface of the oxide semiconductor layer has a crystal region.
8. The semiconductor device according to claim 1 , wherein the second region includes an amorphous structure.
9. The semiconductor device according to claim 1 , wherein the crystal has a size of 20 nm or less.
10. The semiconductor device according to claim 1 , wherein the fourth conductive layer functions as a gate electrode.
11. A semiconductor device comprising:
a first conductive layer over a substrate;
a first insulating layer over the first conductive layer;
an oxide semiconductor layer over the first insulating layer and overlapping with the first conductive layer, the oxide semiconductor layer including a channel region, wherein the first conductive layer is overlapped with the channel region;
a second conductive layer in contact with the oxide semiconductor layer;
a third conductive layer in contact with the oxide semiconductor layer;
a second insulating layer over the oxide semiconductor layer, the second conductive layer and the third conductive layer, and
a fourth conductive layer over the second insulating layer and overlapping with the channel region,
wherein the first conductive layer overlaps the second conductive layer and the third conductive layer,
wherein the fourth conductive layer overlaps the second conductive layer and the third conductive layer,
wherein the oxide semiconductor layer comprises a first region and a second region, the first region being located over the second region,
wherein the first region comprises a crystal, and a c-axis of the crystal is substantially perpendicular to the second insulating layer,
wherein the second region has a lower crystallinity than the first region, and
wherein all the metal elements included in the first region are included in the second region, and all the metal elements included in the second region are included in the first region.
12. The semiconductor device according to claim 11 , wherein the second region in the oxide semiconductor layer contains a crystal of In 2 Ga 2 ZnO 7 .
13. The semiconductor device according to claim 11 , wherein one of the second conductive layer and the third conductive layer is electrically connected to the oxide semiconductor layer on an upper surface or a lower surface of the oxide semiconductor layer.
14. The semiconductor device according to claim 11 , wherein the oxide semiconductor layer contains an In—Ga—Zn—O-based oxide semiconductor material.
15. The semiconductor device according to claim 11 , wherein the second conductive layer and the third conductive layer function as one of a source electrode and a drain electrode and the other of the source electrode and the drain electrode, respectively.
16. The semiconductor device according to claim 11 , wherein the second region includes an amorphous structure.
17. The semiconductor device according to claim 11 , wherein the crystal has a size of 20 nm or less.
18. The semiconductor device according to claim 11 , wherein the fourth conductive layer functions as a gate electrode.