Semiconductor device
A semiconductor device includes a semiconductor element, a capacitor, a first resin, lead frames and a second resin. The first resin forms a resin molding which covers the semiconductor element and the capacitor. The lead frames are attached to two surfaces of the resin molding and are connected to the semiconductor element and the capacitor. The second resin directly covers the capacitor and has a rigidity lower than a rigidity of the first resin. An outside of the second resin is directly covered with the first resin.
1. A semiconductor device comprising:
a semiconductor element;
a capacitor;
a first resin that forms a resin molding which covers the semiconductor element and the capacitor; and
lead frames that are attached to two surfaces of the resin molding and that are connected to the semiconductor element and the capacitor,
a second resin that directly covers the capacitor and that has a rigidity lower than a rigidity of the first resin, wherein
an outside of the second resin is directly covered with the first resin.
2. The semiconductor device according to claim 1 , wherein
the capacitor is a ceramic capacitor.
3. The semiconductor device according to claim 1 , wherein
the first resin is an epoxy resin, and
the second resin is a resin selected from the group consisting of a silicon resin, a fluororesin and a polyvinyl chloride resin.
4. The semiconductor device according to claim 1 , further comprising
metal plates respectively fixed to the lead frames, wherein
the capacitor is fixed to each of the metal plates,
the second resin directly covers joining portions between the capacitor and the metal plates, and
a portion of the second resin covering the capacitor is continuously connected to portions of the second resin covering the joining portions.
5. The semiconductor device according to claim 4 , wherein
the second resin is arranged apart from the lead frames.
6. The semiconductor device according to claim 1 , further comprising
metal plates respectively fixed to the lead frames,
a solder material fixed to one of the lead frames, wherein
the capacitor is fixed to each of the metal plates,
the semiconductor element is fixed to the solder material, and
the first resin is configured to directly cover the semiconductor element, portions of the lead frames and the solder material.
7. A semiconductor device comprising:
a semiconductor element;
a capacitor;
a first resin that forms a resin molding which covers the semiconductor element and the capacitor; and
lead frames that are attached to two surfaces of the resin molding and that are connected to the semiconductor element and the capacitor,
wherein a space is defined between the first resin and the capacitor.
8. The semiconductor device according to claim 7 , wherein
the capacitor is a ceramic capacitor.
9. The semiconductor device according to claim 7 , further comprising
a partition plate that is disposed between the capacitor and the first resin in a view from a stacking direction of the lead frames, the partition plate having a tubular shape, wherein
both end portions of the partition plate in the stacking direction are respectively in contact with the lead frames.
10. The semiconductor device according to claim 9 , wherein
the space is defined by the lead frames and the partition plate.
11. The semiconductor device according to claim 7 , further comprising
metal plates respectively fixed to the lead frames,
a solder material fixed to one of the lead frames, wherein
the capacitor is fixed to each of the metal plates,
the semiconductor element is fixed to the solder material, and
the first resin is configured to directly cover the semiconductor element, portions of the lead frames and the solder material.
12. A semiconductor device comprising:
a semiconductor element;
a capacitor;
a first resin that forms a resin molding, the resin molding covering the semiconductor element and the capacitor and being apart from the capacitor; and
lead frames that are attached to two surfaces of the resin molding and that are connected to the semiconductor element and the capacitor.
13. The semiconductor device according to claim 12 , wherein
the capacitor is a ceramic capacitor.
14. The semiconductor device according to claim 12 , further comprising
a partition plate that is disposed between the capacitor and the first resin in a view from a stacking direction of the lead frames, the partition plate having a tubular shape, wherein
both end portions of the partition plate in the stacking direction are respectively in contact with the lead frames.
15. The semiconductor device according to claim 12 , further comprising
metal plates respectively fixed to the lead frames,
a solder material fixed to one of the lead frames, wherein
the capacitor is fixed to each of the metal plates,
the semiconductor element is fixed to the solder material, and
the first resin is configured to directly cover the semiconductor element, portions of the lead frames and the solder material.