Display device and electronic appliance
View Patent ↗A display device with low manufacturing cost, a display device with low power consumption, a display device capable of being formed over a large substrate, a display device with a high aperture ratio of a pixel, and a display device with high reliability are provided. The display device includes a transistor electrically connected to a light-transmitting pixel electrode and a capacitor. The transistor includes a gate electrode, a gate insulating film, and a first multilayer film including an oxide semiconductor layer. The capacitor includes the pixel electrode and a second multilayer film overlapping with the pixel electrode, positioned at a predetermined distance from the pixel electrode, and having the same layer structure as the first multilayer film. A channel formation region of the transistor is at least one layer, which is not in contact with the gate insulating film, of the first multilayer film.
1. A display device comprising:
a transistor comprising:
a gate electrode;
a first multilayer film comprising an oxide semiconductor layer comprising a channel formation region of the transistor; and
a gate insulating film between the gate electrode and the first multilayer film;
a pixel electrode electrically connected to the transistor; and
a capacitor comprising a second multilayer film,
wherein the pixel electrode overlaps with the second multilayer film,
wherein the first multilayer film comprises the same layer structure as the second multilayer film,
wherein the oxide semiconductor layer is provided apart from the gate insulating film, and
wherein the second multilayer film is provided apart from the pixel electrode.
2. The display device according to claim 1 , further comprising a first oxide layer between the gate insulating film and the oxide semiconductor layer.
3. The display device according to claim 2 , further comprising a second oxide layer in contact with the oxide semiconductor layer.
4. The display device according to claim 2 ,
wherein electron affinity of the oxide semiconductor layer is higher than electron affinity of the first oxide layer by 0.2 eV or more.
5. The display device according to claim 2 ,
wherein concentration of aluminum, silicon, titanium, gallium, germanium, yttrium, zirconium, tin, lanthanum, cerium, or hafnium in the first oxide layer is 1.5 times or more as high as that in the oxide semiconductor layer.
6. The display device according to claim 2 ,
wherein the first oxide layer and the oxide semiconductor layer are each an In—Ga—Zn-based oxide,
wherein the first oxide layer has an atomic ratio of In:Ga:Zn=x 1 :y 1 :z 1 ,
wherein the oxide semiconductor layer has an atomic ratio of In:Ga:Zn=x 2 :y 2 :z 2 , and
wherein y 1 /x 1 is 1.5 times or more as large as y 2 /x 2 .
7. The display device according to claim 2 ,
wherein the oxide semiconductor layer has a crystalline structure, and
wherein the first oxide layer has a lower crystallinity than the oxide semiconductor layer.
8. The display device according to claim 1 , further comprising a capacitor line electrically connected to the second multilayer film.
9. An electronic appliance comprising the display device according to claim 1 .
10. A display device comprising:
a transistor comprising:
a gate electrode;
a first multilayer film comprising:
a first oxide layer; and
an oxide semiconductor layer comprising a channel formation region of the transistor; and
a gate insulating film between the gate electrode and the first multilayer film;
a pixel electrode electrically connected to the transistor; and
a capacitor comprising a second multilayer film,
wherein the pixel electrode overlaps with the second multilayer film,
wherein the first multilayer film comprises the same layer structure as the second multilayer film,
wherein the first oxide layer is provided between the gate insulating film and the oxide semiconductor layer, and
wherein the second multilayer film is provided apart from the pixel electrode.
11. The display device according to claim 10 , further comprising a second oxide layer in contact with the oxide semiconductor layer.
12. The display device according to claim 10 ,
wherein electron affinity of the oxide semiconductor layer is higher than electron affinity of the first oxide layer by 0.2 eV or more.
13. The display device according to claim 10 ,
wherein concentration of aluminum, silicon, titanium, gallium, germanium, yttrium, zirconium, tin, lanthanum, cerium, or hafnium in the first, oxide layer is 1.5 times or more as high as that in the oxide semiconductor layer.
14. The display device according to claim 10 ,
wherein the first oxide layer and the oxide semiconductor layer are each an In—Ga—Zn-based oxide,
wherein the first oxide layer has an atomic ratio of In:Ga:Zn=x 1 :y 1 :z 1 ,
wherein the oxide semiconductor layer has an atomic ratio of In:Ga:Zn=x 2 :y 2 :z 2 , and
wherein y 1 /x 1 is 1.5 times or more as large as y 2 /x 2 .
15. The display device according to claim 10 ,
wherein the oxide semiconductor layer has a crystalline structure, and
wherein the first oxide layer has a lower crystallinity than the oxide semiconductor layer.
16. The display device according to claim 10 , further comprising a capacitor line electrically connected to the second multilayer film.
17. An electronic appliance comprising the display device according to claim 10 .