IP Library › Granted Patent US 9,018,630
Granted Patent B2
US 9,018,630 · App. 14/000,440 · Granted Apr 28, 2015

Heterocyclic dinaphtho thieno thiophene (DNTT) compounds for use as organic semiconductor thin films in field effect transistors and related methods

Inventors: Kazuo Takimiya (Higashihiroshima, JP); Kazuki Niimi (Higashihiroshima, JP); Hirokazu Kuwabara (Tokyo, JP); Yuichi Sadamitsu (Tokyo, JP); Eisei Kanoh (Tokyo, JP)
Assignee: Nippon Kayaku Kabushiki Kaisha
H01L51/0074C07C319/20C07D495/04C09K11/06H01L51/0558C09K2211/1011C09K2211/1092
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,018,630
App. No.
14/000,440
Granted
Apr 28, 2015
Kind
B2
Abstract

Provided are a novel heterocyclic compound represented by formula (1), and a field-effect transistor having a semiconductor layer comprising the aforementioned compound. Also provided is a method for producing an intermediate enabling the production of the aforementioned novel heterocyclic compound. (In the formula, R 1 and R 2 represent a hydrogen atom, a C 2-16 alkyl group or an aryl group. However, when R 1 each independently represents a C 2-16 alkyl group or an aryl group, R 2 represents a hydrogen atom or each independently represents an aryl group; and when R 1 represents a hydrogen atom, R 2 each independently represents an aryl group.)

Claims (22)

1. A heterocyclic compound represented by the following formula (1):

(wherein R 1 and R 2 each represent one of a hydrogen atom, a C2-C16 alkyl group, and an aryl group; when R 1 each independently represents a C2-C16 alkyl group or an aryl group, R 2 each represents a hydrogen atom or R 2 each independently represents an aryl group; and when R 1 represents a hydrogen atom, R 2 each independently represents an aryl group).

2. The heterocyclic compound according to claim 1 , wherein in the formula (1), R 1 each independently is a linear C5-C12 alkyl group, and R 2 each is a hydrogen atom.

3. The heterocyclic compound according to claim 1 , wherein in the formula (1), R 1 each independently is an aryl group having one of a phenyl structure, a naphthyl structure, and a biphenyl structure, and R 2 each is a hydrogen atom.

4. The heterocyclic compound according to claim 3 , wherein in the formula (1), R 1 each independently is an aryl group selected from the group consisting of a phenyl group, a 4-alkylphenyl group, a 1-naphthyl group, and a biphenyl group, and R 2 is a hydrogen atom.

5. The heterocyclic compound according to claim 1 , wherein in the formula (1), R 1 is a hydrogen atom, and R 2 each independently is an aryl group having one of a phenyl structure, a naphthyl structure, and a biphenyl structure.

6. The heterocyclic compound according to claim 5 , wherein in the formula (1), R 1 each is a hydrogen atom, and R 2 each independently is an aryl group selected from the group consisting of a phenyl group, a 4-alkylphenyl group, a 1-naphthyl group, and a biphenyl group.

7. An organic semiconductor material comprising one or two or more heterocyclic compounds represented by the formula (1) according to claim 1 .

8. An ink for creating a semiconductor device, comprising one or two or more heterocyclic compounds represented by the formula (1) according to claim 1 .

9. A method for producing an organic thin film, which comprises applying the ink according to claim 8 .

10. A method for producing a field effect transistor, comprising the step of forming an organic thin film on a substrate by the method according to claim 9 .

11. An organic thin film comprising one or two or more heterocyclic compounds represented by the formula (1) according to claim 1 .

12. A field effect transistor comprising an organic thin film according to claim 11 .

13. The field effect transistor according to claim 12 , wherein the field effect transistor is a bottom contact type.

14. The field effect transistor according to claim 12 , wherein the field effect transistor is a top contact type.

15. A method for producing an organic thin film, wherein the organic thin film according to claim 11 is formed by a deposition method.

16. A method for producing a field effect transistor, comprising the step of forming an organic thin film on a substrate by the method according to claim 15 .

17. A method for producing an intermediate compound represented by a formula (4) in production of a heterocyclic compound represented by a formula (2), the method comprising reacting a compound represented by a formula (3) with dimethyl disulfide:

(wherein R 3 represents a substituent);

(wherein R 3 and R 4 represent a substituent).

18. A method for producing an intermediate compound represented by a formula (6) in production of a heterocyclic compound represented by a formula (2), the method comprising reacting a compound represented by a formula (4) with a tin compound represented by a formula (5):

(wherein R 3 , R 4 , and R 5 represent a substituent).

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 7, 2014
From: HIROSHIMA UNIVERSITY
To: NIPPON KAYAKU KABUSHIKI KAISHA
Reel/Frame 031906/0399 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2013
From: TAKIMIYA, KAZUO; NIIMI, KAZUKI; KUWABARA, HIROKAZU; SADAMITSU, YUICHI; KANOH, EISEI
To: HIROSHIMA UNIVERSITY; NIPPON KAYAKU KABUSHIKI KAISHA
Reel/Frame 031086/0470 →
Priority Claims (1)
JP 2011-039403 · Feb 25, 2011 · national
Continuity (1)
Related Publication 20130330876A1 · Dec 12, 2013