Method of disposing phosphor layers
Disclosed herein is a method of disposing phosphor layers, which can prevent damage to phosphors and also effectively dispose phosphor layers at desired locations of Light-Emitting Diodes (LEDs) when the phosphor layers are detached and disposed at the top surfaces of the LEDs. According to an embodiment, phosphor layers fabricated by filling phosphor layer pattern holes within an area of the vertical frame with a phosphor solution are detached from the phosphor layer pattern holes by applying force downwardly or upwardly in a vertical manner.
1. A method of disposing phosphor layers, comprising:
preparing phosphor layer fabrication equipment comprising a vertical frame and a plurality of phosphor layer pattern holes;
fabricating phosphor layers by filling the plurality of phosphor layer pattern holes of the phosphor layer fabrication equipment with a phosphor layer solution comprising a phosphor, silicon, and a filler and baking the filled phosphor layer solution;
placing a Light-Emitting Diode (LED) under the phosphor present in each of the plurality of phosphor layer pattern holes of the phosphor layer fabrication equipment in such a way as to be spaced apart from the phosphor; and
vertically applying force to the phosphor present in the phosphor layer pattern hole from a top towards a bottom of the phosphor so that the phosphor is detached from the phosphor layer pattern hole downwardly and vertically and placed at a top surface of the LED.
2. The method of claim 1 , wherein in the disposing of the phosphor at the top surface of the LED, the force vertically applied to the phosphor present in the phosphor layer pattern hole from the top towards the bottom of the phosphor is transferred by an object having a flat bottom.
3. The method of claim 1 , wherein the phosphor layer pattern holes are vertically formed in the vertical frame within a specific area of the vertical frame.
4. The method of claim 1 , wherein the plurality of phosphor layer pattern holes each comprise pad electrodes of a shape comprising at least one of a rectangle, circle, a triangle, a pentagon, or another shape.
5. The method of claim 4 , wherein the pad electrodes may be located at an upper center, lower left, lower center, lower right, and any other suitable location of each of the plurality of phosphor layer pattern holes.
6. The method of claim 1 , wherein the baking is at a temperature in a range of about 50° C. to 200° C. for about 5 minutes to 100 minutes.
7. The method of claim 1 , wherein the pressure is about 10 torr to 700 torr.
8. A method of disposing phosphor layers, comprising:
preparing phosphor layer fabrication equipment comprising a vertical frame and a plurality of phosphor layer pattern holes;
fabricating phosphor layers by filling the plurality of phosphor layer pattern holes of the phosphor layer fabrication equipment with a phosphor layer solution comprising a phosphor, silicon, and a filler and baking the filled phosphor layer solution;
placing an upward guider under the phosphor present in each of the plurality of phosphor layer pattern holes of the phosphor layer fabrication equipment in such a way as to be spaced from the phosphor and placing a vacuum chuck over the phosphor present in the phosphor layer pattern hole in such a way as to be spaced from the phosphor;
vertically applying force to the phosphor present in the phosphor layer pattern hole from a bottom towards a top of the phosphor using the upward guider so that the phosphor is detached from the phosphor layer pattern hole upwardly and vertically and then placed at a bottom of the vacuum chuck;
maintaining the vacuum chuck at specific pressure or lower so that the phosphor present at the bottom of the vacuum chuck is adsorbed by the bottom of the vacuum chuck; and
moving the phosphor present at the bottom of the vacuum chuck and placing the phosphor at a top surface of an LED.
9. The method of claim 8 , wherein the upward guider has a flat top surface.
10. The method of claim 8 , wherein the phosphor layer pattern holes are vertically formed in the vertical frame within a specific area of the vertical frame.
11. The method of claim 8 , wherein the plurality of phosphor layer pattern holes each comprise pad electrodes of a shape comprising at least one of a rectangle, circle, a triangle, a pentagon, or another shape.
12. The method of claim 11 , wherein the pad electrodes may be located at an upper center, lower left, lower center, lower right, and any other suitable location of each of the plurality of phosphor layer pattern holes.
13. The method of claim 1 , wherein the baking is at a temperature in a range of about 50° C. to 200° C. for about 5 minutes to 100 minutes.
14. The method of claim 1 , wherein the pressure is about 10 torr to 700 torr.