Field-effect P-N junction
View Patent ↗This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.
1. A device comprising:
a semiconductor layer, a thickness of the semiconductor layer being comparable to a semiconductor depletion width of the semiconductor layer;
an ohmic contact disposed on a first side of the semiconductor layer;
a rectifying contact disposed on the first side the semiconductor layer, the rectifying contact being electrically isolated from the ohmic contact; and
a gate including a layer disposed on a second side of the semiconductor layer and an electrode disposed on the layer, the gate being aligned with the rectifying contact, the gate being configured to create a non-shunted, gate-inverted current pathway through the semiconductor layer from the rectifying contact to the ohmic contact.
2. The device of claim 1 , wherein the semiconductor layer comprises an inorganic semiconductor.
3. The device of claim 1 , wherein the rectifying contact comprises a metal, a semi-metal, or a semiconductor.
4. The device of claim 1 , wherein the layer comprises an inorganic dielectric material.
5. The device of claim 1 , wherein the gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.
6. The device of claim 1 , wherein the layer comprises a material including an electric charge configured to produce an effective gate electric field of the gate.
7. The device of claim 6 , wherein the layer comprises a ferroelectric material.