In-situ deposition of film stacks

1. A method of forming a film stack comprising layers of silicon nitride film and silicon oxide film on a patterned semiconductor substrate in a processing chamber, the method comprising:

(a) depositing a silicon nitride film layer via reaction of a nitrogen containing precursor with a first silicon containing precursor, the deposition accelerated by a plasma having a first plasma composition;

(b) converting the plasma from having the first plasma composition to having a second plasma composition during which the plasma is continuously maintained in the processing chamber;

(c) substantially eliminating the first silicon containing precursor from the processing chamber, the elimination accelerated by the plasma while it has the second plasma composition;

(d) converting the plasma from having the second plasma composition to having a third plasma composition during which the plasma is continuously maintained in the processing chamber;

(e) depositing a silicon oxide film layer via reaction of a second silicon containing precursor with an oxidant, the deposition accelerated by the plasma while it has the third plasma composition;

(f) converting the plasma from having the third plasma composition to having a fourth plasma composition during which the plasma is continuously maintained in the processing chamber;

(g) substantially eliminating the oxidant from the processing chamber, the elimination accelerated by the plasma while it has the fourth plasma composition;

(h) converting the plasma from having the fourth plasma composition to having the first plasma composition during which the plasma is continuously maintained in the processing chamber; and

(i) repeating (a)-(g) to form another silicon nitride film layer and another silicon oxide film layer.

2. The method of claim 1 , wherein:

substantially eliminating the oxidant from the processing chamber in (g) does not include a pump-to-base of the processing chamber below a base pressure of 0.5 torr; and

substantially eliminating the first silicon containing precursor from the processing chamber in (c) does not include a pump-to-base of the processing chamber below a base pressure of 0.5 torr.

3. The method of claim 1 , wherein the second silicon containing precursor is TEOS.

4. The method of claim 3 , wherein the oxidant is oxygen.

5. The method of claim 4 , wherein the first silicon containing precursor is silane.

6. The method of claim 5 , wherein the nitrogen containing precursor is ammonia.

7. The method of claim 1 , wherein the second plasma composition includes an inert gas species and the fourth plasma composition includes an inert gas species.

8. The method of claim 7 , wherein:

the elimination of the oxidant in (g) is further accelerated by purging the processing chamber with the inert gas species; and

the elimination of the first silicon containing precursor in (c) is further accelerated by purging the processing chamber with the inert gas species.

9. The method of claim 8 , wherein the inert gas species of the second plasma composition is argon, and the inert gas species of the fourth plasma composition is argon.

10. The method of claim 9 , further comprising delivering argon to the processing chamber using a dedicated process gas delivery line, the dedicated process gas delivery line not used to deliver the first or second silicon containing precursors, the ammonia containing precursor, or the oxidant to the processing chamber.

11. The method of claim 9 , wherein the first plasma composition includes nitrogen and the third plasma composition includes nitrogen.

12. The method of claim 1 , wherein:

the plasma while having the first plasma composition and while having the third plasma composition is maintained with:

RF power having one or more frequencies between about 200 kHz and about 2000 kHz; and

RF power having one or more frequencies between about 13.56 MHz and about 80 MHz; and

the plasma while having the second plasma composition and while having the fourth plasma composition is maintained with:

RF power having one or more frequencies between about 13.56 MHz and about 80 MHz.

13. The method of claim 1 , wherein the first and third plasma compositions comprise substantially the same chemical species in substantially the same concentrations, and wherein the second and fourth plasma compositions comprise substantially the same chemical species in substantially the same concentrations.

14. A method of forming a film stack comprising layers of silicon nitride film and silicon oxide film on a patterned semiconductor substrate in a processing chamber, the method comprising:

depositing a first silicon nitride film, the first silicon nitride film formed from the reaction of a nitrogen containing precursor with a first silicon containing precursor, the deposition accelerated by a plasma having a first plasma composition;

continuously maintaining a plasma in the processing chamber while converting the plasma having the first plasma composition into a plasma having a second plasma composition;

substantially eliminating the first silicon containing precursor from the processing chamber, the elimination accelerated by the plasma having the second plasma composition;

continuously maintaining a plasma in the processing chamber while converting the plasma having the second plasma composition into a plasma having a third plasma composition;

depositing a first silicon oxide film atop the first silicon nitride film, the first silicon oxide film formed from the reaction of a second silicon containing precursor with an oxidant, the deposition accelerated by the plasma having the third plasma composition;

continuously maintaining a plasma in the processing chamber while converting the plasma having the third plasma composition into a plasma having a fourth plasma composition;

substantially eliminating the oxidant from the processing chamber, the elimination accelerated by the plasma having the fourth plasma composition;

continuously maintaining a plasma in the processing chamber while converting the plasma having the fourth plasma composition into a plasma having substantially the first plasma composition;

depositing a second silicon nitride film atop the first silicon oxide film, the second silicon nitride film formed from the reaction of the nitrogen containing precursor with the first silicon containing precursor, the deposition accelerated by the plasma having substantially the first plasma composition;

continuously maintaining a plasma in the processing chamber while converting the plasma having substantially the first plasma composition into a plasma having substantially the second plasma composition;

repeating the step of substantially eliminating the first silicon containing precursor from the processing chamber, the elimination accelerated by the plasma having substantially the second plasma composition;

continuously maintaining a plasma in the processing chamber while converting the plasma having substantially the second plasma composition into a plasma having substantially the third plasma composition;

depositing a second silicon oxide film atop the second silicon nitride film, the second silicon oxide film formed from the reaction of the second silicon containing precursor with the oxidant, the deposition accelerated by the plasma having substantially the third plasma composition;

continuously maintaining a plasma in the processing chamber while converting the plasma having substantially the third plasma composition into a plasma having substantially the fourth plasma composition; and

repeating the step of substantially eliminating the oxidant from the processing chamber, the elimination accelerated by the plasma having substantially the fourth plasma composition.