Display device and semiconductor device
View Patent ↗An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
1. A display device comprising:
a first transistor comprising a first semiconductor layer including a first channel formation region and a second channel formation region;
a second transistor comprising a second semiconductor layer;
a first wiring electrically connected to one of a source and a drain of the first transistor;
a second wiring electrically connected to one of a source and a drain of the second transistor;
a third wiring including a first region;
a first electrode including a second region that overlaps with at least a part of the first semiconductor layer; and
a first pixel electrode electrically connected to the other of the source and the drain of the first transistor,
wherein the first electrode is electrically connected to the other of the source and the drain of the second transistor,
wherein the first region and at least a part of the second semiconductor layer overlap with each other,
wherein the first region is capable of being a gate of the second transistor,
wherein the second region is capable of being a gate of the first transistor,
wherein the gate of the first transistor is electrically connected to the other of the source and the drain of the second transistor,
wherein a longitudinal direction of the first wiring intersects with a longitudinal direction of the third wiring,
wherein a longitudinal direction of the second wiring intersects with the longitudinal direction of the third wiring,
wherein a longitudinal direction of the first pixel electrode intersects with the longitudinal direction of the third wiring,
wherein a channel width direction of the first transistor intersects with the longitudinal direction of the third wiring,
wherein a channel width of the first channel formation region is longer than a channel length of the first channel formation region,
wherein the first semiconductor layer includes a region between the first channel formation region and the second channel formation region,
wherein a longitudinal direction of the region intersects with the longitudinal direction of the third wiring,
wherein the first wiring includes a third region,
wherein at least a part of the first electrode and at least a part of the first semiconductor layer overlap with each other in a fourth region, and
wherein the third region and the fourth region overlap with each other.
2. The display device according to claim 1 , wherein the first pixel electrode has a light-transmitting property.
3. The display device according to claim 1 , further comprising:
a partition wall covering an end portion of the first pixel electrode,
wherein the third region is positioned under the partition wall.
4. The display device according to claim 1 , further comprising:
a third transistor comprising a third semiconductor layer including a third channel formation region and a fourth channel formation region;
a fourth transistor comprising a fourth semiconductor layer;
a fourth wiring electrically connected to one of a source and a drain of the third transistor;
a fifth wiring electrically connected to one of a source and a drain of the fourth transistor;
a second electrode including a fifth region that overlaps with at least a part of the third semiconductor layer; and
a second pixel electrode electrically connected to the other of the source and the drain of the third transistor,
wherein the second electrode is electrically connected to the other of the source and the drain of the fourth transistor,
wherein the first region and at least a part of the fourth semiconductor layer overlap with each other,
wherein the fifth region is capable of being a gate of the third transistor,
wherein the third wiring includes a sixth region,
wherein the sixth region is capable of being a gate of the fourth transistor,
wherein the gate of the third transistor is electrically connected to the other of the source and the drain of the fourth transistor,
wherein a longitudinal direction of the fourth wiring intersects with the longitudinal direction of the third wiring,
wherein a longitudinal direction of the fifth wiring intersects with the longitudinal direction of the third wiring,
wherein a longitudinal direction of the second pixel electrode intersects with the longitudinal direction of the third wiring,
wherein a channel width direction of the third transistor intersects with the longitudinal direction of the third wiring,
wherein a channel width of the third channel formation region is longer than a channel length of the third channel formation region,
wherein the third semiconductor layer includes a ninth region between the third channel formation region and the fourth channel formation region,
wherein a longitudinal direction of the ninth region intersects with the longitudinal direction of the third wiring,
wherein the fourth wiring includes a seventh region,
wherein at least a part of the second electrode and at least a part of the third semiconductor layer overlap with each other in an eighth region, and
wherein the seventh region and the eighth region overlap with each other.
5. The display device according to claim 4 , a size of the first pixel electrode and a size of the second pixel electrode are different.
6. The display device according to claim 4 , a shape of the first pixel electrode and a shape of the second pixel electrode are different.
7. The display device according to claim 4 , wherein the first pixel electrode and the second pixel electrode have a light-transmitting property.
8. The display device according to claim 4 , further comprising:
a partition wall covering an end portion of the first pixel electrode and an end portion of the second pixel electrode,
wherein the third region, the fourth region, the seventh region, and the eighth region are positioned under the partition wall.
9. A display device comprising:
a first transistor comprising a first semiconductor layer including a first channel formation region and a second channel formation region;
a second transistor comprising a second semiconductor layer;
a first wiring electrically connected to one of a source and a drain of the first transistor;
a second wiring electrically connected to one of a source and a drain of the second transistor;
a third wiring including a first region;
a first electrode including a second region that overlaps with at least a part of the first semiconductor layer; and
a first pixel electrode electrically connected to the other of the source and the drain of the first transistor,
wherein the first electrode is electrically connected to the other of the source and the drain of the second transistor,
wherein the first region and at least a part of the second semiconductor layer overlap with each other,
wherein the first region is capable of being a gate of the second transistor,
wherein the second region is capable of being a gate of the first transistor,
wherein the gate of the first transistor is electrically connected to the other of the source and the drain of the second transistor,
wherein a longitudinal direction of the first wiring intersects with a longitudinal direction of the third wiring,
wherein a longitudinal direction of the second wiring intersects with the longitudinal direction of the third wiring,
wherein a longitudinal direction of the first pixel electrode intersects with the longitudinal direction of the third wiring,
wherein a channel width direction of the first transistor intersects with the longitudinal direction of the third wiring,
wherein a channel width of the first channel formation region is longer than a channel length of the first channel formation region,
wherein the first semiconductor layer includes a region between the first channel formation region and the second channel formation region,
wherein a longitudinal direction of the region intersects with the longitudinal direction of the third wiring,
wherein the first wiring includes a third region, and
wherein the third region and at least a part of the first channel formation region overlap with each other.
10. The display device according to claim 9 , wherein the first pixel electrode has a light-transmitting property.
11. The display device according to claim 9 , further comprising:
a partition wall covering an end portion of the first pixel electrode,
wherein the third region is positioned under the partition wall.
12. The display device according to claim 9 , further comprising:
a third transistor comprising a third semiconductor layer including a third channel formation region and a fourth channel formation region;
a fourth transistor comprising a fourth semiconductor layer;
a fourth wiring electrically connected to one of a source and a drain of the third transistor;
a fifth wiring electrically connected to one of a source and a drain of the fourth transistor;
a second electrode including a fourth region that overlaps with at least a part of the third semiconductor layer; and
a second pixel electrode electrically connected to the other of the source and the drain of the third transistor,
wherein the second electrode is electrically connected to the other of the source and the drain of the fourth transistor,
wherein the first region and at least a part of the fourth semiconductor layer overlap with each other,
wherein the fourth region is capable of being a gate of the third transistor,
wherein the third wiring includes a fifth region,
wherein the fifth region is capable of being a gate of the fourth transistor,
wherein the gate of the third transistor is electrically connected to the other of the source and the drain of the fourth transistor,
wherein a longitudinal direction of the fourth wiring intersects with the longitudinal direction of the third wiring,
wherein a longitudinal direction of the fifth wiring intersects with the longitudinal direction of the third wiring,
wherein a longitudinal direction of the second pixel electrode intersects with the longitudinal direction of the third wiring,
wherein a channel width direction of the third transistor intersects with the longitudinal direction of the third wiring,
wherein a channel width of the third channel formation region is longer than a channel length of the third channel formation region,
wherein the third semiconductor layer includes a seventh region between the third channel formation region and the fourth channel formation region,
wherein a longitudinal direction of the seventh region intersects with the longitudinal direction of the third wiring,
wherein the fourth wiring includes a sixth region, and
wherein the sixth region and at least a part of the third channel formation region overlap with each other.
13. The display device according to claim 12 , a size of the first pixel electrode and a size of the second pixel electrode are different.
14. The display device according to claim 12 , a shape of the first pixel electrode and a shape of the second pixel electrode are different.
15. The display device according to claim 12 , wherein the first pixel electrode and the second pixel electrode have a light-transmitting property.
16. The display device according to claim 12 , further comprising:
a partition wall covering an end portion of the first pixel electrode and an end portion of the second pixel electrode,
wherein the third region and the sixth region are positioned under the partition wall.