Semiconductor device and manufacturing method of semiconductor device
A semiconductor device includes an electron transit layer formed on a substrate; an electron supply layer formed on the electron transit layer; a doping layer formed on the electron supply layer, the doping layer being formed with a nitride semiconductor in which an impurity element to become p-type and C are doped; a p-type layer formed on the doping layer, the p-type layer being formed with a nitride semiconductor in which the impurity element to become p-type is doped; a gate electrode formed on the p-type layer; and a source electrode and a drain electrode formed on the doping layer or the electron supply layer. The p-type layer is formed in an area immediately below the gate electrode, and a density of the C doped in the doping layer is greater than or equal to 1×10 17 cm −3 and less than or equal to 1×10 19 cm −3 .
1. A semiconductor device comprising:
an electron transit layer formed on a substrate;
an electron supply layer formed on the electron transit layer;
a doping layer formed on the electron supply layer, the doping layer being formed with a nitride semiconductor in which an impurity element to become p-type and C are doped;
a p-type layer formed on the doping layer, the p-type layer being formed with a nitride semiconductor in which the impurity element to become p-type is doped;
a gate electrode formed on the p-type layer; and
a source electrode and a drain electrode formed on the doping layer or the electron supply layer, wherein
the p-type layer is formed in an area immediately below the gate electrode, and
a density of the C doped in the doping layer is greater than or equal to 1×10 17 cm −3 and less than or equal to 1×10 19 cm −3 .
2. The semiconductor device according to claim 1 , wherein
the impurity element to become p-type is Mg or Be.
3. The semiconductor device according to claim 1 , wherein
in the doping layer and the p-type layer, a density of the impurity element to become p-type before being doped is greater than or equal to 1×10 18 cm −3 .
4. The semiconductor device according to claim 1 , wherein
the p-type layer is formed with a material including GaN.
5. The semiconductor device according to claim 1 , wherein
the doping layer is formed with a material including GaN.
6. The semiconductor device according to claim 1 , wherein
the doping layer has a thickness of greater than or equal to 5 nm and less than or equal to 15 nm.
7. The semiconductor device according to claim 1 , wherein
the electron transit layer is formed with a material including GaN.
8. The semiconductor device according to claim 1 , wherein
the electron supply layer is formed with a material including AlGaN or InAlN.
9. A power unit comprising the semiconductor device according to claim 1 .
10. An amplifier comprising the semiconductor device according to claim 1 .