Flash memory structure and method of forming the same
Embodiments of mechanisms of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a word line cell disposed over the substrate. The semiconductor device further includes a memory gate disposed over the substrate and adjacent to the word line cell and a spacer on a sidewall of the memory gate. The spacer and the word line cell are at opposite sides of the memory gate. In addition, an angle between a top surface of the memory gate and a sidewall of the memory gate is in a range from about 75° to about 90°.
1. A semiconductor device structure, comprising:
a substrate;
a word line cell disposed over the substrate;
a memory gate disposed over the substrate and adjacent to the word line cell;
a spacer on a sidewall of the memory gate, wherein the spacer and the word line cell are at opposite sides of the memory gate; and
a contact formed over the memory gate, wherein the contact further comprises an extending portion extending into the spacer,
wherein an angle between a top surface of the memory gate and the sidewall of the memory gate is in a range from about 75° to about 90°.
2. The semiconductor device structure as claimed in claim 1 , wherein the word line cell comprises a control gate and an insulating layer formed over the control gate.
3. The semiconductor device structure as claimed in claim 1 , wherein the memory gate comprises polysilicon.
4. The semiconductor device structure as claimed in claim 1 , wherein the word line cell has a first height and the memory gate has a second height, and a ratio of the second height to the first height is in a range from about 4:5 to about 1:1.
5. The semiconductor device structure as claimed in claim 1 , wherein the memory gate is in a shape of a rectangle.
6. The semiconductor device structure as claimed in claim 1 , wherein a portion of the spacer is in between the substrate and the extending portion of the contact, such that the extending portion of the contact is not in contact with the substrate.
7. The semiconductor device structure as claimed in claim 6 , wherein the word line cell has a first height and the portion of the spacer between the substrate and the extending portion of the contact has a forth height, and a ratio of the forth height to the first height is in a range from about 9:20 to about 14:20.
8. A semiconductor device structure, comprising:
a substrate having a top surface;
a word line cell formed over the substrate, wherein the word line cell comprises a control gate and an insulating layer formed over the control gate;
a memory gate adjacent to the word line cell, the memory gate having a top surface;
a spacer on a sidewall of the memory gate; and
a contact formed over the memory gate, wherein the contact further comprises an extending portion extending into the spacer,
wherein the top surface of the memory gate is parallel to the top surface of the substrate.
9. The semiconductor device structure as claimed in claim 8 , wherein the word line cell has a first height and the memory gate has a second height, and a ratio of the second height to the first height is in a range from about 4:5 to about 1:1.
10. The semiconductor device structure as claimed in claim 8 , wherein a shortest distance between the substrate and the contact is in a range from about 350 A to about 1000 A.
11. The semiconductor device structure as claimed in claim 8 , wherein the memory gate comprises polysilicon.
12. The semiconductor device structure as claimed in claim 8 , wherein the memory gate is in a shape of a rectangle.
13. The semiconductor device structure as claimed in claim claim 8 , wherein a portion of the spacer is in between the substrate and the extending portion of the contact, such that the extending portion of the contact is not in contact with the substrate.
14. The semiconductor device structure as claimed in claim 13 , wherein the word line cell has a first height and the portion of the spacer between the substrate and the extending portion of the contact has a forth height, and a ratio of the forth height to the first height is in a range from about 9:20 to about 14:20.