Semiconductor magnetoresistive random-access memory (MRAM) device and manufacturing method thereof

1. A semiconductor device, comprising:

a magnetic tunnel junction unit; a magnetic shielding material layer covering sidewalls of the magnetic tunnel junction unit;

an isolation dielectric layer disposed between the sidewalls of the magnetic tunnel junction unit and the magnetic shielding material layer,

wherein a height of the isolation dielectric layer is greater than a height of the magnetic tunnel junction unit in a vertical direction,

wherein a height of the magnetic shielding material layer is greater than the height of the isolation dielectric layer in the vertical direction, and a portion of the magnetic shielding material layer extending above the isolation dielectric layer comprises an oxide of the magnetic shielding material, and

wherein the oxide of the magnetic shielding material includes Al 2 O 3 ;

a first dielectric layer in which the magnetic tunnel junction unit, the isolation dielectric layer, and the magnetic shielding material layer are embedded,

wherein a height of the first dielectric layer and the height of the magnetic shielding material layer are substantially the same;

a second dielectric layer located above the first dielectric layer and the magnetic tunnel junction unit; and

a first conductive contact extending through the second dielectric layer and the isolation dielectric layer so as to electrically connect with a top portion of the magnetic tunnel junction unit,

wherein an upper portion of the isolation dielectric layer contacts portions of each of the first conductive contact and the second dielectric layer, and

wherein the first conductive contact and the magnetic shielding material layer are electrically isolated from each other by the second dielectric material layer and the isolation dielectric layer.

2. The semiconductor device of claim 1 , wherein the conductive contact is embedded within a dielectric layer having substantially a same thickness as the conductive contact.

3. The semiconductor device of claim 1 , wherein the magnetic shielding material layer includes Al, nickel iron alloy, or a diamagnetic material.

4. The semiconductor device of claim 1 , wherein the isolation dielectric layer is disposed in direct contact with the magnetic tunnel junction unit.

5. The semiconductor device of claim 1 , wherein the upper portion of the isolation dielectric layer surrounds the portion of the first conductive contact that is located nearest to the magnetic tunnel junction unit.

6. The semiconductor device of claim 5 , further comprising:

a base dielectric layer including a second conductive contact disposed therein; and

an isolation layer disposed on the second conductive contact, wherein the magnetic tunnel junction unit is disposed on the isolation layer.

7. The semiconductor device of claim 6 , wherein a width of the magnetic tunnel junction unit and a width of the isolation layer are substantially the same, and a width of the second conductive contact is greater than the widths of the magnetic tunnel junction unit and isolation layer.

8. The semiconductor device of claim 1 , wherein the second dielectric layer is formed having at least one stepped portion.

9. The semiconductor device of claim 1 , wherein the first conductive contact includes copper, aluminum, or tungsten.

10. The semiconductor device of claim 6 , wherein the second conductive contact is a copper plug.

11. The semiconductor device of claim 2 , wherein the isolation layer includes TaN or TiN.

12. The semiconductor device of claim 2 , wherein a width of the conductive contact is greater than a width of the magnetic tunnel junction unit.