Method for manufacturing semiconductor device
After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode over a substrate having an insulating surface;
forming an insulating film over the gate electrode;
forming a film on an inner wall of a vacuum chamber by introducing a source gas to the vacuum chamber after evacuating the vacuum chamber;
disposing the substrate into the vacuum chamber after forming the film;
forming a microcrystalline semiconductor film over the insulating film in the vacuum chamber after disposing the substrate;
forming a buffer layer over the microcrystalline semiconductor film;
forming a semiconductor film to which an impurity element imparting one conductivity type is added;
etching the microcrystalline semiconductor film, the buffer layer, and the semiconductor film to which the impurity element imparting one conductivity type is added, wherein the microcrystalline semiconductor film, the buffer layer, and the semiconductor film to which the impurity element imparting one conductivity type is added are narrower than the gate electrode;
forming source and drain electrodes over the semiconductor film to which the impurity element imparting one conductivity type is added;
etching and removing a part of the semiconductor film to which the impurity element imparting one conductivity type is added; and
etching and removing a part of the buffer layer which is not covered with the source and drain electrodes,
wherein substrate temperature is increased continuously in the step of forming the microcrystalline semiconductor film,
wherein helium is introduced to the vacuum chamber in the step of forming the microcrystalline semiconductor film, and
wherein in the step of forming the microcrystalline semiconductor film, at least one deposition condition is changed continuously such that a first region near an interface with the buffer layer is formed at a deposition rate that is higher than that for forming a second region near an interface with the insulating film.
2. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the buffer layer is an amorphous semiconductor film, and
wherein the buffer layer is formed in a different vacuum chamber from the vacuum chamber used for forming the microcrystalline semiconductor film, under a deposition condition with substrate temperatures of greater than or equal to 300° C. and less than 400° C.
3. The method for manufacturing a semiconductor device according to claim 1 ,
wherein, under another deposition condition of forming a part of the microcrystalline semiconductor film near an interface with the insulating film, a plurality of discharge-stop-periods is provided in a deposition period of one substrate by turning off high-frequency power.
4. The method for manufacturing a semiconductor device according to claim 1 ,
wherein a source gas for forming the microcrystalline semiconductor film includes a silane gas, a hydrogen gas, and a trimethyl boron gas.
5. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the inner wall of the vacuum chamber in which the microcrystalline semiconductor film is formed is heated to a temperature that is higher than a substrate temperature when the microcrystalline semiconductor film is formed.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein the buffer layer is formed using an amorphous semiconductor film containing halogen.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein the vacuum chamber is evacuated to have an atmosphere with a degree of vacuum of over 1×10 −8 Pa and less than or equal to 1×10 −5 Pa.
8. The method for manufacturing a semiconductor device according to claim 1 , wherein argon is introduced to the vacuum chamber in the initial stage of forming the microcrystalline semiconductor film.
9. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode over a substrate having an insulating surface;
forming an insulating film over the gate electrode;
forming a film on an inner wall of a vacuum chamber by introducing a source gas to the vacuum chamber after evacuating the vacuum chamber;
disposing the substrate in the vacuum chamber after forming the film;
forming a first microcrystalline semiconductor film over the insulating film by introducing a source gas including a silane gas and a hydrogen gas to the vacuum chamber under a first deposition condition in which substrate temperature is set at greater than or equal to 100° C. and less than 300° C. after disposing the substrate, so that an oxygen concentration in the first microcrystalline semiconductor film is less than or equal to 1×10 17 atoms/cm 3 ;
forming a second microcrystalline semiconductor film in the vacuum chamber under a second deposition condition in which substrate temperature is set at higher than that of the first deposition condition, and a flow rate ratio of the silane gas to the hydrogen gas is higher than that of the first deposition condition after forming the first microcrystalline semiconductor film, so that a deposition rate of the second microcrystalline semiconductor film is higher than that of the first microcrystalline semiconductor film;
forming a buffer layer over the second microcrystalline semiconductor film, so that an oxygen concentration in the buffer layer is less than or equal to 5×10 19 atoms/cm 3 ;
forming a semiconductor film to which an impurity element imparting one conductivity type is added;
etching the first microcrystalline semiconductor film, the second microcrystalline semiconductor film, the buffer layer, and the semiconductor film to which the impurity element imparting one conductivity type is added, wherein the first microcrystalline semiconductor film, the second microcrystalline semiconductor film, the buffer layer, and the semiconductor film to which the impurity element imparting one conductivity type is added are narrower than the gate electrode;
forming source and drain electrodes over the semiconductor film to which the impurity element imparting one conductivity type is added;
etching and removing a part of the semiconductor film to which the impurity element imparting one conductivity type is added;
etching and removing a part of the buffer layer which is not covered with the source and drain electrodes; and
forming an insulating film over and in contact with the etched part of the buffer layer, and the source and drain electrodes,
wherein between the step of forming the first microcrystalline semiconductor film and the step of forming the second microcrystalline semiconductor film, at least one of substrate temperature and the flow rate ratio of the silane gas to the hydrogen gas is changed continuously and deposition continues.
10. The method for manufacturing a semiconductor device according to claim 9 ,
wherein the buffer layer is an amorphous semiconductor film, and
wherein the buffer layer is formed in a different vacuum chamber from the vacuum chamber used for forming the first and second microcrystalline semiconductor films, under a deposition condition with substrate temperatures of greater than or equal to 300° C. and less than 400° C.
11. The method for manufacturing a semiconductor device according to claim 9 ,
wherein, before disposing the substrate in the vacuum chamber, the vacuum chamber is evacuated to have an atmosphere with a degree of vacuum of over 1×10 −8 Pa and less than or equal to 1×10 −5 Pa, and
wherein a hydrogen gas or a rare gas is introduced to generate plasma after the evacuation.
12. The method for manufacturing a semiconductor device according to claim 9 ,
wherein a hydrogen gas or a rare gas is introduced to generate plasma after disposing the substrate in the vacuum chamber.
13. The method for manufacturing a semiconductor device according to claim 9 ,
wherein, under the second deposition condition, a plurality of discharge-stop-periods is provided in a deposition period of one substrate by turning off high-frequency power.
14. The method for manufacturing a semiconductor device according to claim 9 ,
wherein the source gas for forming the first and second microcrystalline semiconductor films further includes a trimethyl boron gas.
15. The method for manufacturing a semiconductor device according to claim 2 ,
wherein the inner wall of the vacuum chamber in which the first and second microcrystalline semiconductor films are formed is heated to a temperature that is higher than the substrate temperature when the first and the second microcrystalline semiconductor films are formed.
16. The method for manufacturing a semiconductor device according to claim 9 , wherein the buffer layer is formed using an amorphous semiconductor film containing halogen.
17. The method for manufacturing a semiconductor device according to claim 9 , wherein the vacuum chamber is evacuated to have an atmosphere with a degree of vacuum of over 1×10 −8 Pa and less than or equal to 1×10 −8 Pa.
18. The method for manufacturing a semiconductor device according to claim 9 , wherein, between the step of forming the first microcrystalline semiconductor film and the step of forming a second microcrystalline semiconductor film, substrate temperature is increased continuously and deposition continues.