Light-emitting device and method of manufacturing the same
The present application relates to a light-emitting device and method of manufacturing the same. The device includes a lower portion, and vertical light-emitting structures disposed on the lower portion. A conductive member partially surrounds the vertical light-emitting structures, and reflective members are disposed between the vertical light-emitting structures. The reflective members reflect light that is emitted in a lateral direction from the vertical light-emitting structures to minimize the number of times that light emitted in a lateral direction from the vertical light-emitting structure is transmitted through the light-absorbing member, thereby increasing a luminous efficiency.
1. A light-emitting device, comprising:
a lower portion;
a plurality of vertical light-emitting structures disposed on the lower portion;
a conductive member partially surrounding the plurality of vertical light-emitting structures; and
a plurality of reflective members disposed between the plurality of vertical light-emitting structures and configured to reflect light that is emitted in a lateral direction from the plurality of vertical light-emitting structures,
wherein each of the plurality of reflective members comprises an internal portion and an external portion, the internal and external portions having different refractive indexes.
2. The light-emitting device of claim 1 , wherein each of the plurality of vertical light-emitting structures has a core-shell structure.
3. The light-emitting device of claim 2 , wherein:
each of the plurality of vertical light-emitting structures comprises:
a first conductive type semiconductor,
an active layer, and
a second conductive type semiconductor,
the first conductive type semiconductor is a core portion, and
the active layer and the second conductive type semiconductor are a shell portion.
4. The light-emitting device of claim 1 , wherein each of the plurality of vertical light-emitting structures has any one shape selected from: nanorod, nanowire, or nanopyramid shape.
5. The light-emitting device of claim 1 , wherein the conductive member comprises:
any one of indium tin oxide (ITO), ZnO, IZO(ZnO:In), AZO(ZnO:Al), GZO(ZnO:Ga), In 2 O 3 , SnO 2 , CdO, CdSnO 4 , and Ga 2 O 3 .
6. The light-emitting device of claim 1 , wherein a refractive index of each of the plurality of reflective members is smaller than a refractive index of the conductive member.
7. A light-emitting device, comprising:
a lower portion;
a plurality of vertical light-emitting structures disposed on the lower portion;
a conductive member partially surrounding the plurality of vertical light-emitting structures; and
a plurality of reflective members disposed between the plurality of vertical light-emitting structures and configured to reflect light that is emitted in a lateral direction from the plurality of vertical light-emitting structures,
wherein the plurality of reflective members each has a nanobead shape.
8. The light-emitting device of claim 1 , wherein a refractive index of the internal portion of each of the plurality of reflective members is smaller than a refractive index of the external portion.
9. The light-emitting device of claim 1 , wherein the plurality of reflective members have the same diameter.
10. The light-emitting device of claim 1 , wherein the plurality of reflective members have two or more diameters.
11. The light-emitting device of claim 1 , further comprising:
a mask layer disposed on the lower portion and having a plurality of holes that expose the lower portion therethrough,
wherein the plurality of vertical light-emitting structures are disposed on regions of the lower portion, which are exposed by the plurality of holes.
12. The light-emitting device of claim 1 , wherein the lower portion comprises:
a substrate and a semiconductor layer disposed on the substrate, and
wherein the plurality of vertical light-emitting structures are disposed on the semiconductor layer.