Silicon oxide nanopore wetting and stabilization by molecular coating

1. A nanopore device comprising:

a multi-layer structure comprising at least one layer of silicon dioxide extending from an outer edge of the multi-layer structure to a surface defining an aperture extending through the multi-layer structure, wherein at least the surface comprising a minimal diameter consists essentially of a monosilane functionalized silicon dioxide having a silicon-oxygen-silicon bond, the monosilane functionalized silicon dioxide having the following structure:

wherein n is an integer from 1 to 12; R 2 and R 3 are each independently a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, or a tert-butyl group; and R 4 is a chloride, a carboxylic acid group, an amine group, an amide group, a thiol group, an alcohol group, an acyl chloride group, an acyl bromide group, an acyl iodide group, an alkene group, an alkyne group, or a polyether group.

2. The nanopore device of claim 1 , wherein the monosilane functionalized silicon dioxide is formed by reaction of a monosilane with silanol groups present on a surface of the silicon dioxide.

3. The nanopore device of claim 2 , wherein the monosilane functionalized silicon dioxide is formed by reaction of 3-aminopropyl-dimethyl-ethoxysilane with silanol groups present on the surface of the silicon dioxide.

4. The nanopore device of claim 1 , wherein the multi-layer structure comprising the surface defining the aperture comprises at least one layer of silicon dioxide at a thickness of about 20 nm to about 200 nm.

5. The nanopore device of claim 1 , wherein the minimal diameter of the aperture is about 5 nm to about 60 nm.

6. The nanopore device of claim 1 , wherein a surface characteristic of the aperture is modified.

7. The nanopore device of claim 6 , wherein the surface characteristic is surface charge, polarity, pH sensitivity, or hydrophobicity.

8. The nanopore device of claim 1 , wherein the multi-layer structure comprising the surface defining the aperture further comprises at least one layer of a silicon nitride layer.

9. The nanopore device of claim 1 , wherein the aperture further comprises first and second cavities being fluidically connected via the aperture.

10. The nanopore device of claim 9 , further comprising a voltage source and a current sensing device operative to detect changes in a current within the nanopore device, the current having a current path defined by the first cavity, the second cavity, and the aperture.

11. The nanopore device of claim 10 , wherein the current is substantially stable and substantially linear between −1 Volt (V) and +1 V.

12. A method for making a nanopore device, the method comprising:

fabricating an aperture in a multi-layer structure comprising at least one layer of silicon dioxide extending from an outer edge of the multi-layer structure to a surface defining an aperture extending through the multi-layer structure; and

substantially functionalizing an exposed surface of the at least one layer of silicon dioxide with a monosilane to form a silicon-oxygen-silicon bond and a monolayer on the surface of the silicon dioxide;

wherein at least the surface comprising a minimal diameter consists essentially of the monosilane functionalized silicon dioxide having the following structure:

wherein n is an integer from 1 to 12; R 2 and R 3 are each independently a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, or a tert-butyl group; and R 4 is a chloride, a carboxylic acid group, an amine group, an amide group, a thiol group, an alcohol group, an acyl chloride group, an acyl bromide group, an acyl iodide group, an alkene group, an alkyne group, or a polyether group.

13. The method of claim 12 , further comprising cleaning a surface of the aperture prior to substantially functionalizing the surface of the silicon dioxide.

14. The method of claim 12 , wherein the minimal diameter of the aperture is about 5 nm to about 60 nm.

15. The method of claim 12 , wherein the monosilane functionalized silicon dioxide is formed by reaction of 3-aminopropyl-dimethyl-ethoxysilane with silanol groups present on the surface of the silicon dioxide.

16. The method of claim 12 , wherein substantially functionalizing the surface of the aperture comprises adding the monosilane in a solution to the multi-layer structure at a first temperature and then increasing the first temperature to a second temperature for a period of time.

17. The method of claim 16 , wherein the second temperature is about 90 degrees Celsius to about 130 degrees Celsius.

18. A nanopore device comprising:

a multi-layer structure comprising at least one layer of silicon dioxide extending from an outer edge of the multi-layer structure to a surface defining an aperture extending through the multi-layer structure, wherein at least the surface comprising a minimal diameter consists essentially of a monosilane functionalized silicon dioxide having a silicon-oxygen-silicon bond, the monosilane functionalized silicon dioxide having the following structure:

wherein n is an integer from 1 to 12; R 2 and R 3 are each independently a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, or a tert-butyl group; and R 4 is an amino group; and

the monosilane functionalized silicon dioxide comprises a monosilane monolayer having a thickness of about 0.5 to about 4 nanometers.

19. The nanopore device of claim 18 , wherein the monosilane functionalized silicon dioxide is formed by reaction of is 3-aminopropyl-dimethyl-ethoxysilane with silanol groups present on the silicon dioxide surface.