Package assembly and method of forming the same
A package assembly including a semiconductor die electrically coupled to a substrate by an interconnected joint structure. The semiconductor die includes a bump overlying a semiconductor substrate, and a molding compound layer overlying the semiconductor substrate and being in physical contact with a first portion of the bump. The substrate includes a no-flow underfill layer on a conductive region. A second portion of the bump is in physical contact with the no-flow underfill layer to form the interconnected joint structure.
1. A package assembly, comprising a semiconductor die electrically coupled to a substrate by an interconnected joint structure:
wherein the semiconductor die comprises a bump overlying a semiconductor substrate, and a molding compound layer overlying the semiconductor substrate and being in physical contact with a first portion of the bump;
wherein the substrate comprises a no-flow underfill layer on a conductive region, the no-flow underfill layer comprising flux, and the no-flow underfill layer is separated from the molding compound layer; and
wherein a second portion of the bump is in physical contact with the no-flow underfill layer to form the interconnected joint structure.
2. The package assembly of claim 1 , wherein the bump is a solder bump.
3. The package assembly of claim 1 , wherein the bump is electrically connected to the conductive region.
4. The package assembly of claim 1 , wherein the second portion of the bump protrudes from a top surface of the molding compound layer.
5. The package assembly of claim 1 , wherein the semiconductor die further comprises a post-passivation interconnect (PPI) layer between the semiconductor substrate and the molding compound layer.
6. The package assembly of claim 5 , wherein semiconductor die further comprises a polymer layer between the PPI layer and the molding compound layer.
7. The package assembly of claim 5 , wherein semiconductor die further comprises a polymer layer between the PPI layer and the semiconductor substrate.
8. The package assembly of claim 1 , wherein the bump is a solder bump with a diameter greater than 200 μm.
9. A package assembly comprising:
a first substrate having a conductive pad;
a bump structure electrically connected to the conductive pad;
a molding compound over the first substrate and in physical contact with the bump structure;
a second substrate having a conductive region;
a no-flow underfill (NUF) material over the conductive region; and
a gap between the NUF material and the molding compound,
wherein the bump structure is in physical contact with the NUF material and in electrical contact with the conductive region; and
the NUF comprises flux.
10. The package assembly of claim 9 , wherein a height of the molding compound is less than a height of the bump structure.
11. The package assembly of claim 10 , wherein the height of the molding compound is between about 0.25 times the height of the bump structure and about 0.75 times the height of the bump structure.
12. The package assembly of claim 9 , further comprising an interconnect layer electrically connected between the bump structure and the conductive pad, the interconnect layer comprising a landing pad region, and the bump structure is in contact with the landing pad region.
13. The package assembly of claim 12 , wherein the landing pad region is directly above the conductive pad.
14. The package assembly of claim 9 , wherein the bump structure comprises:
an under bump metallurgy (UBM) layer over the conductive pad; and
a bump feature over the UBM layer.
15. A package assembly comprising:
a first substrate having a conductive pad;
a bump structure electrically connected to the conductive pad;
a molding compound in physical contact with the bump structure, wherein the bump structure protrudes from the molding compound;
a second substrate having a conductive region; and
a no-flow underfill (NUF) material comprising flux over the conductive region, wherein the NUF material is separated from the molding compound,
wherein the bump structure is in physical contact with the NUF material and in electrical contact with the conductive region.
16. The package assembly of claim 15 , further comprising a protection layer between the molding compound and the first substrate, wherein the molding compound is in physical contact with the protection layer.
17. The package assembly of claim 15 , further comprising a redistribution layer (RDL) between the molding compound and the first substrate, wherein the RDL is in electrical contact with the conductive pad, and the bump structure is in electrical contact with the RDL.
18. The package assembly of claim 15 , wherein the second substrate is an interposer.
19. The package assembly of claim 15 , further comprising a mask layer over the second substrate, wherein the mask layer defines an opening exposing the conductive region.
20. The package assembly of claim 19 , wherein the NUF material covers the conductive region and exposes a portion of the mask layer.