IP Library Granted Patent US 9,065,066
Granted Patent B2
US 9,065,066 · App. 13/850,534 · Granted Jun 23, 2015

Light-emitting element, light-emitting device, electronic device, and lighting device

Inventors: Satoshi Seo (Sagamihara, JP); Hiromi Seo (Sagamihara, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5016H01L51/0072H01L51/0074H01L51/0085H01L51/504H01L2251/308H01L2251/5384
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,065,066
App. No.
13/850,534
Granted
Jun 23, 2015
Kind
B2
Abstract

A light-emitting layer, which is a stack of a first light-emitting layer and a second light-emitting layer, is provided between an anode and a cathode. The first light-emitting layer is formed on the anode side and contains a first light-emitting substance converting triplet excitation energy into light emission, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property. The second light-emitting layer contains a second light-emitting substance converting triplet excitation energy into light emission, the first organic compound, and a third organic compound having a hole-transport property. The second organic compound has a lower HOMO level than the third organic compound. The first light-emitting substance emits light with a wavelength shorter than that of light emitted from the second light-emitting substance. The first and the second organic compounds form an exciplex. The first and the third organic compounds form an exciplex.

Claims (101)

1. A light-emitting element comprising:

a light-emitting layer between an anode and a cathode,

wherein the light-emitting layer is a stack of a first light-emitting layer and a second light-emitting layer,

wherein the first light-emitting layer is located at the anode side,

wherein the first light-emitting layer comprises a first light-emitting substance converting triplet excitation energy into light emission, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property,

wherein the second light-emitting layer comprises a second light-emitting substance converting triplet excitation energy into light emission, the first organic compound, and a third organic compound having a hole-transport property,

wherein the first organic compound and the second organic compound form a first exciplex,

wherein the first organic compound and the third organic compound form a second exciplex,

wherein an emission spectrum of the first exciplex overlaps with an absorption band on the longest wavelength side in an absorption spectrum of the first light-emitting substance, and

wherein an emission spectrum of the second exciplex overlaps with an absorption band on the longest wavelength side in an absorption spectrum of the second light-emitting substance.

2. The light-emitting element according to claim 1 , wherein the first exciplex has higher excitation energy than the second exciplex.

3. The light-emitting element according to claim 1 ,

wherein the first exciplex is formed from an anion of the first organic compound and a cation of the second organic compound, and

wherein the second exciplex is formed from an anion of the first organic compound and a cation of the third organic compound.

4. The light-emitting element according to claim 1 ,

wherein the first light-emitting substance is a phosphorescent compound or a thermally activated delayed fluorescence material,

wherein the second light-emitting substance is a phosphorescent compound or a thermally activated delayed fluorescence material,

wherein the first organic compound is a π-electron deficient heteroaromatic compound,

wherein the second organic compound is a π-electron rich heteroaromatic compound or an aromatic amine compound, and

wherein the third organic compound is a π-electron rich heteroaromatic compound or an aromatic amine compound.

5. A light-emitting device comprising the light-emitting element according to claim 1 .

6. An electronic device comprising the light-emitting device according to claim 5 .

7. A lighting device comprising the light-emitting device according to claim 5 .

8. A light-emitting element comprising:

a light-emitting layer between an anode and a cathode;

a hole-transport layer between the anode and the light-emitting layer; and

an electron-transport layer between the cathode and the light-emitting layer,

wherein the light-emitting layer is a stack of a first light-emitting layer and a second light-emitting layer,

wherein the first light-emitting layer is in contact with the hole-transport layer,

wherein the first light-emitting layer comprises a first light-emitting substance converting triplet excitation energy into light emission, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property,

wherein the second light-emitting layer is in contact with the electron-transport layer,

wherein the second light-emitting layer comprises a second light-emitting substance converting triplet excitation energy into light emission, the first organic compound, and a third organic compound having a hole-transport property,

wherein the first organic compound and the second organic compound form a first exciplex,

wherein the first organic compound and the third organic compound form a second exciplex,

wherein an emission spectrum of the first exciplex overlaps with an absorption band on the longest wavelength side in an absorption spectrum of the first light-emitting substance, and

wherein an emission spectrum of the second exciplex overlaps with an absorption band on the longest wavelength side in an absorption spectrum of the second light-emitting substance.

9. The light-emitting element according to claim 8 , wherein the first exciplex has higher excitation energy than the second exciplex.

10. The light-emitting element according to claim 8 ,

wherein the first exciplex is formed from an anion of the first organic compound and a cation of the second organic compound, and

wherein the second exciplex is formed from an anion of the first organic compound and a cation of the third organic compound.

11. The light-emitting element according to claim 8 ,

wherein the first light-emitting substance is a phosphorescent compound or a thermally activated delayed fluorescence material,

wherein the second light-emitting substance is a phosphorescent compound or a thermally activated delayed fluorescence material,

wherein the first organic compound is a π-electron deficient heteroaromatic compound,

wherein the second organic compound is a π-electron rich heteroaromatic compound or an aromatic amine compound, and

wherein the third organic compound is a π-electron rich heteroaromatic compound or an aromatic amine compound.

12. A light-emitting device comprising the light-emitting element according to claim 8 .

13. An electronic device comprising the light-emitting device according to claim 12 .

14. A lighting device comprising the light-emitting device according to claim 12 .

15. A light-emitting element comprising:

an anode:

a first light-emitting layer over the anode;

a second light-emitting layer over the first light-emitting layer; and

a cathode over the second light-emitting layer,

wherein the first light-emitting layer comprises a first organic compound, a second organic compound, and a first light-emitting substance converting triplet excitation energy into light emission,

wherein the second light-emitting layer comprises the first organic compound, a third organic compound, and a second light-emitting substance converting triplet excitation energy into light emission,

wherein the first organic compound is 2-[3′-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline,

wherein the second organic compound is N-(1,1′-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine,

wherein the third organic compound is N,N′-bis(9,9-dimethylfluoren-2-yl)-N,N′-di(biphenyl-4-yl)-1,4-phenylenediamine,

wherein the first organic compound and the second organic compound form a first exciplex, and

wherein the first organic compound and the third organic compound form a second exciplex,

wherein an emission spectrum of the first exciplex overlaps with an absorption band on the longest wavelength side in an absorption spectrum of the first light-emitting substance, and

wherein an emission spectrum of the second exciplex overlaps with an absorption band on the longest wavelength side in an absorption spectrum of the second light-emitting substance.

16. The light-emitting element according to claim 15 , wherein the first light-emitting substance is (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III).

17. The light-emitting element according to claim 15 , wherein the second light-emitting substance is bis{4,6-dimethyl-2-[5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,8-dimethyl-4,6-nonanedionato-κ 2 O,O′)iridium(III).

18. A light-emitting device comprising the light-emitting element according to claim 15 .

19. An electronic device comprising the light-emitting device according to claim 18 .

20. A lighting device comprising the light-emitting device according to claim 18 .

21. The light-emitting element according to claim 1 ,

wherein the second organic compound has a higher lowest unoccupied molecular orbital level than the first organic compound, and

wherein the third organic compound has a higher lowest unoccupied molecular orbital level than the first organic compound.

22. The light-emitting element according to claim 8 ,

wherein the second organic compound has a higher lowest unoccupied molecular orbital level than the first organic compound, and

wherein the third organic compound has a higher lowest unoccupied molecular orbital level than the first organic compound.

23. The light-emitting element according to claim 15 ,

wherein the second organic compound has a higher lowest unoccupied molecular orbital level than the first organic compound, and

wherein the third organic compound has a higher lowest unoccupied molecular orbital level than the first organic compound.

24. The light-emitting element according to claim 1 ,

wherein the second organic compound has a lower highest occupied molecular orbital level than the third organic compound, and

wherein the first light-emitting substance emits light with a wavelength shorter than a wavelength of light emitted from the second light-emitting substance.

25. The light-emitting element according to claim 8 ,

wherein the second organic compound has a lower highest occupied molecular orbital level than the third organic compound, and

wherein the first light-emitting substance emits light with a wavelength shorter than a wavelength of light emitted from the second light-emitting substance.

26. The light-emitting element according to claim 1 ,

wherein at least one of the absorption band on the longest wavelength side in the absorption spectrum of the first light-emitting substance and the absorption band on the longest wavelength side in the absorption spectrum of the second light-emitting substance corresponds to direct transition from a singlet ground state to a triplet excited state.

27. The light-emitting element according to claim 8 ,

wherein at least one of the absorption band on the longest wavelength side in the absorption spectrum of the first light-emitting substance and the absorption band on the longest wavelength side in the absorption spectrum of the second light-emitting substance corresponds to direct transition from a singlet ground state to a triplet excited state.

28. The light-emitting element according to claim 15 ,

wherein at least one of the absorption band on the longest wavelength side in the absorption spectrum of the first light-emitting substance and the absorption band on the longest wavelength side in the absorption spectrum of the second light-emitting substance corresponds to direct transition from a singlet ground state to a triplet excited state.

29. The light-emitting element according to claim 1 ,

wherein a peak of the emission spectrum of the first exciplex overlaps with the absorption band on the longest wavelength side of the first light-emitting substance.

30. The light-emitting element according to claim 8 ,

wherein a peak of the emission spectrum of the first exciplex overlaps with the absorption band on the longest wavelength side of the first light-emitting substance.

31. The light-emitting element according to claim 15 ,

wherein a peak of the emission spectrum of the first exciplex overlaps with the absorption band on the longest wavelength side of the first light-emitting substance.

32. The light-emitting element according to claim 1 ,

wherein at least one of a difference between an energy of a peak of the emission spectrum of the first exciplex and an energy of a peak of the absorption band on the longest wavelength side in the absorption spectrum of the first light-emitting substance and a difference between an energy of a peak of the emission spectrum of the second exciplex and an energy of a peak of the absorption band on the longest wavelength side in the absorption spectrum of the second light-emitting substance is 0.2 eV or less.

33. The light-emitting element according to claim 8 ,

wherein at least one of a difference between an energy of a peak of the emission spectrum of the first exciplex and an energy of a peak of the absorption band on the longest wavelength side in the absorption spectrum of the first light-emitting substance and a difference between an energy of a peak of the emission spectrum of the second exciplex and an energy of a peak of the absorption band on the longest wavelength side in the absorption spectrum of the second light-emitting substance is 0.2 eV or less.

34. The light-emitting element according to claim 15 ,

wherein at least one of a difference between an energy of a peak of the emission spectrum of the first exciplex and an energy of a peak of the absorption band on the longest wavelength side in the absorption spectrum of the first light-emitting substance and a difference between an energy of a peak of the emission spectrum of the second exciplex and an energy of a peak of the absorption band on the longest wavelength side in the absorption spectrum of the second light-emitting substance is 0.2 eV or less.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2013
From: SEO, SATOSHI; SEO, HIROMI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 030087/0036 →
Priority Claims (3)
JP 2012-091533 · Apr 13, 2012 · national
JP 2012-225061 · Oct 10, 2012 · national
JP 2013-047830 · Mar 11, 2013 · national
Continuity (1)
Related Publication 20130270531A1 · Oct 17, 2013