Semiconductor device and method of manufacturing semiconductor device
A semiconductor device including: a base material portion that includes a semiconductor substrate and an insulating film that is formed on one face of the semiconductor substrate and on which a vertical hole is formed along the thickness direction of the semiconductor substrate; a vertical hole wiring portion that includes a vertical hole electrode formed on a side wall of the base material portion that forms the vertical hole; a metallic film that is formed within the insulating film and that is electrically connected to the vertical hole wiring portion; and a conductive protective film that is formed to be in contact with the metallic film within the insulating film and that is formed in a region that includes a contact region of a probe during a probe test that is performed in the middle of manufacture on a film face of the metallic film.
1. A method of manufacturing a semiconductor device comprising:
forming a metallic film inside an insulating film of a base material portion that includes a semiconductor substrate and the insulating film which is formed on one face of the semiconductor substrate;
forming a conductive protective film to be in physical contact with the metallic film within a predetermined region that is within the insulating film and within a film face of the metallic film, wherein the conductive protective film lines the metallic film in a region that includes a contact region of a probe;
performing a probe test by causing the probe to be in contact with one of the metallic film and the conductive protective film which is exposed on a surface of the insulating film at an opposite side to the semiconductor substrate side;
forming a vertical hole on the base material portion along a thickness direction of the semiconductor substrate after the probe test;
forming a glass sealing material on at least one of the metallic film and the conductive protective film; and
attaching a glass substrate to the base material portion via the glass sealing material.
2. The method of manufacturing a semiconductor device according to claim 1 , further comprising forming the metallic film on a semiconductor substrate side of the conductive protective film.
3. The method of manufacturing a semiconductor device according to claim 1 , further comprising forming the conductive protective film on a semiconductor substrate side of the metallic film.
4. The method of manufacturing a semiconductor device according to claim 1 , further comprising forming the conductive protective film at a position that opposes an opening portion of the vertical hole.
5. The method of manufacturing a semiconductor device according to claim 1 , further comprising forming an opening portion with a smaller opening area than a region that includes a contact region of the probe in which the conductive protective film is formed on a surface of the insulating film on a contact side of the probe.
6. The method of manufacturing a semiconductor device according to claim 1 , wherein the conductive protective film comprises anyone of an Au film, an Ni film, and a Cu film.
7. The method of manufacturing a semiconductor device according to claim 1 , wherein the conductive protective film comprises at least one of a W film, a Ti film, a laminated film of a TiN film and a Ti film, and a laminated film of a TaN film and a Ta film.
8. A semiconductor device comprising:
a base material portion that includes a semiconductor substrate and an insulating film that is formed on one face of the semiconductor substrate and on which a vertical hole is formed along a thickness direction of the semiconductor substrate;
a vertical hole wiring portion that includes a vertical hole electrode formed on a side wall of the base material portion that forms the vertical hole;
a metallic film that is formed within the insulating film and that is electrically connected to the vertical hole wiring portion;
a conductive protective film that is formed to be in physical contact with the metallic film within the insulating film, wherein the conductive protective film lines the metallic film in a region that includes a contact region of a probe; and
a glass sealing material and a glass substrate sequentially disposed on at least one of the metallic film and the conductive protective film.
9. The semiconductor device according to claim 8 ,
wherein the metallic film is provided on a semiconductor substrate side of the conductive protective film.
10. The semiconductor device according to claim 8 ,
wherein the conductive protective film is provided on a semiconductor substrate side of the metallic film.
11. The semiconductor device according to claim 8 ,
wherein the conductive protective film is arranged at a position that opposes an opening portion of the vertical hole.
12. The semiconductor device according to claim 8 ,
wherein an opening portion with a smaller opening area than a region that includes a contact region of the probe in which the conductive protective film is formed is formed on a surface of the insulating film on a contact side of the probe.
13. The semiconductor device according to claim 8 ,
wherein the conductive protective film comprises any one of an Au film, an Ni film, and a Cu film.
14. The semiconductor device according to claim 8 ,
wherein the conductive protective film comprises at least one of a W film, a Ti film, a laminated film of a TiN film and a Ti film, and a laminated film of a TaN film and a Ta film.