IP Library › Granted Patent US 9,077,291
Granted Patent B2
US 9,077,291 · App. 13/832,334 · Granted Jul 7, 2015

Power amplifier

Inventor: Yoshinobu Sasaki (Tokyo, JP)
Assignee: MITSUBISHI ELECTRIC CORPORATION
H03F3/21H03F1/0261H03F3/245H03F3/72H03F2200/18H03F2200/27H03F2200/411H03F2203/7206
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,077,291
App. No.
13/832,334
Granted
Jul 7, 2015
Kind
B2
Abstract

A power amplifier includes: an amplifier having an input terminal and including an amplifying transistor having a threshold voltage; a transistor supplying a bias to the input terminal of the amplifier according to an on/off signal; a capacitor connected between the input terminal of the amplifier and a grounding point; a resistor connected between the input terminal of the amplifier and the grounding point, in parallel with the capacitor; and a diode connected in series with the resistor. The diode has a threshold voltage that is lower than the threshold voltage of the amplifying transistor.

Claims (9)

1. A power amplifier comprising:

an amplifier having an input terminal and including an amplifying transistor having a threshold voltage;

a transistor supplying a bias to the input terminal of the amplifier according to an on/off signal;

a capacitor connected between the input terminal of the amplifier and a grounding point;

a resistor connected between the input terminal of the amplifier and the grounding point, in parallel with the capacitor; and

a diode connected in series with the resistor, wherein

the diode has a threshold voltage that is lower than the threshold voltage of the amplifying transistor, and

the diode turns off after the transistor turns off.

2. The power amplifier of claim 1 , wherein the amplifying transistor is a HBT and the diode is a Schottky diode.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 4, 2017
From: MITSUBISHI ELECTRIC CORPORATION
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 040839/0688 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 2, 2013
From: SASAKI, YOSHINOBU
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 030336/0804 →
Priority Claims (1)
JP 2012-155841 · Jul 11, 2012 · national
Continuity (1)
Related Publication 20140015613A1 · Jan 16, 2014