Semiconductor package with improved thermal properties
A semiconductor package, comprises an encapsulant which contains a semiconductor substrate, the package lower side being mountable on a surface. The semiconductor substrate backside is in close proximity of the semiconductor package lower side for improved thermal conductivity to the surface. The active side of the semiconductor substrate, facing the upper side of the semiconductor package, has a plurality of die contacts. A plurality of electrically conductive interconnects are connected to the die contacts and extend to the lower side of the semiconductor package for connecting the die contacts to the surface.
1. A semiconductor package comprising:
an encapsulant comprising:
an upper side; and
a lower side mountable on a surface;
a semiconductor substrate in the encapsulant, the substrate comprising:
a backside proximal the lower side of the encapsulant for thermal connection to the surface; and
an active side distal the lower side of the encapsulant, the active side of the substrate including a plurality of die contacts;
a plurality of electrically conductive interconnects extending to the lower side of the encapsulant for electrically connecting the die contacts of the substrate to the surface; and
a heat spreader in thermal contact with the backside of the semiconductor substrate for aiding thermal connection to the surface.
2. The semiconductor package of claim 1 , wherein the electrically conductive interconnects include a redistribution layer connected to the die contacts for lateral redistribution of the connections within the encapsulant.
3. The semiconductor package of claim 2 , wherein the redistribution layer is connected to a pad ring located at the lower side of the encapsulant via vertically oriented electrically conductive portions embedded in the encapsulant.
4. The semiconductor package of claim 3 , wherein the vertically oriented electrically conductive portions comprise vias.
5. The semiconductor package of claim 4 , wherein the vias comprise a metallic material.
6. The semiconductor package of claim 1 , wherein the heat spreader comprises a metallic material.
7. The semiconductor package of claim 6 , wherein the backside coincides with the lower side of the encapsulant, and wherein the heat spreader covers at least part of the backside of the substrate and/or the lower side of the encapsulant.
8. The semiconductor package of claim 1 , wherein the backside is recessed with respect to the lower side of the encapsulant and wherein thermally conductive material fills a recessed area defined by the recessed backside and the encapsulant.
9. The semiconductor package of claim 8 , wherein the recessed area is partly filled with a thermally conductive material and partly filled with encapsulant.
10. The semiconductor package of claim 9 , wherein the thermally conductive material in the recessed area is arranged in a plurality of vias.
11. The semiconductor package of claim 1 , wherein the semiconductor substrate comprises a Radio Frequency (RF) circuit.
12. The semiconductor package of claim 1 , wherein the heat spreader is operable to perform an electrical function.
13. The semiconductor package of claim 12 , wherein the heat spreader is tied to ground.
14. A method of making a semiconductor package having improved thermal conduction to a surface, the method comprising;
providing a semiconductor substrate having an active side and an opposing backside;
applying an encapsulant for enclosing the semiconductor substrate such that the backside of the substrate is proximal to a lower side of the encapsulant, wherein the lower side of the encapsulant is mountable on said surface; and
connecting a plurality of electrically conductive interconnects to die contacts on the active side of the semiconductor substrate for connecting the die contacts to the lower side of the encapsulant, and
providing a heat spreader in thermal contact with the backside of the semiconductor substrate for aiding thermal connection to the surface, with the heat spreader the lower side of the encapsulant and the plurality of electrically conductive interconnects being arranged relative to one another to interface both the heat spreader and the interconnects with the surface along a common plane.
15. The method of claim 14 , the method further comprising:
providing a redistribution layer;
connecting the redistribution layer to die contacts on the active side of the semiconductor substrate, and using the redistribution layer to spread the electrically conductive interconnects laterally outward; and
applying an overmolding layer on top of the redistribution layer and configuring the overmolding layer with the redistribution layer to protect the active side of the semiconductor substrate and the redistribution layer from ambient influences.
16. The method of claim 15 , the method further comprising:
etching holes through the encapsulant, the etched holes extending up to the redistribution layer;
forming vertically-oriented conductive portions by filling the etched holes with an electrically conductive material, wherein connecting the plurality of electrically conductive interconnects to die contacts on the active side of the semiconductor substrate includes connecting each of the electrically conductive interconnects to one of the vertically-oriented conductive portions;
connecting a heat spreader to the back side of the semiconductor substrate; and
connecting a pad ring to the vertically-oriented conductive portions.
17. The semiconductor package of claim 1 , wherein
the plurality of electrically conductive interconnects extend through the encapsulant from the upper side of the encapsulant to the lower side of the encapsulant,
a portion of each of the electrically conductive interconnects at the upper side of the encapsulant is electrically connected to one of the die contacts,
the heat spreader has a planar upper side in contact with the backside of the semiconductor substrate and a planar lower side, and
the heat spreader being configured and arranged with the encapsulant and a portion of each electrically conductive interconnect to interface both the lower side of the heat spreader and the electrically conductive interconnects with the surface along a common plane when the lower side of the encapsulant is mounted to the surface, with the heat spreader being configured and arranged to aid the thermal connection to the surface by conducting heat, from the backside of the semiconductor substrate via the upper side of the heat spreader, to the surface via the lower side of the heat spreader.