Method for transferring a graphene layer
A method transfers a graphene layer from a donor substrate onto a final substrate. The method includes: providing a metal layer on the donor substrate; and growing a graphene layer on the metal layer. The method also includes: laminating a dry film photo-resist on the graphene layer; laminating a tape on the dry film photo-resist; chemically. etching the metal layer, obtaining an initial structure that includes the tape, the dry film photo-resist and the graphene layer; laminating the initial structure on the final substrate; thermally realizing the tape, so as to obtain an intermediate structure that includes the dry film photo-resist, the graphene layer and the final substrate; removing the dry film photo-resist; and obtaining a final structure that includes the final substrate with a transferred graphene layer.
1. A method, comprising:
providing a metal layer;
growing a graphene layer on said metal layer;
laminating a dry film photo-resist on said graphene layer;
laminating a tape on said dry film photo-resist;
obtaining an initial structure, including said tape, said dry film photo-resist, and said graphene layer, by chemically etching away said metal layer;
laminating said initial structure on a final substrate;
obtaining an intermediate structure, including said dry film photo-resist, said graphene layer, and said final substrate, by thermally releasing said tape from the graphene layer; and
obtaining a final structure, wherein obtaining the final structure includes removing said dry film photo-resist, wherein the dry film photo-resist is a UV-sensitive dry film photo-resist.
2. A method according to claim 1 , wherein removing the dry film photo-resist comprises chemically etching said dry film photo-resist.
3. A method according to claim 1 , wherein obtaining the final structure includes:
patterning said dry film photo-resist by exposing said dry film photo-resist film to ultraviolet light through a mask; and
patterning said graphene layer by chemically etching said graphene layer through the patterned dry film photo-resist.
4. A method according to claim 1 , wherein laminating the dry film photo-resist on said graphene layer comprises laminating a dry film negative photo-resist with a thickness in a range of 10-100μm on said graphene layer.
5. A method according to claim 1 , wherein said metal layer is a nickel layer or a copper layer.
6. A method according to claim 1 , wherein providing said metal layer includes forming the metal layer on a donor substrate that includes at least one of a semiconductor or insulator crystal substrate, a semiconductor device substrate, an epitaxial layer, a flexible substrate, a metal film, and an organic device substrate.
7. A method according to claim 1 , wherein laminating the tape on said dry film photo-resist comprises laminating a thermal releasing tape on said dry film photo-resist.
8. A method according to claim 1 , wherein laminating the tape uses a thermal release tape having a release temperature in the range of 90° C. and 200° C. and a lamination pressure ranging between 2 bar and 5 bar.