Semiconductor device
A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.
1. A semiconductor device comprising:
a multilayer film in which an oxide semiconductor film and an oxide film are stacked;
a gate electrode; and
a gate insulating film,
wherein the multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween,
wherein the multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film,
wherein the first angle is an acute angle and smaller than the second angle, and
wherein the first angle and the second angle are each greater than or equal to 10° and less than 90°.
2. The semiconductor device according to claim 1 , wherein an upper edge of the oxide semiconductor film substantially coincides with a lower edge of the oxide film in the multilayer film.
3. The semiconductor device according to claim 1 , wherein the oxide film is stacked over the oxide semiconductor film in the multilayer film.
4. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film is stacked over the oxide film, and
wherein a second oxide film is stacked over the oxide semiconductor film.
5. The semiconductor device according to claim 1 ,
wherein each of the oxide semiconductor film and the oxide film includes an In-M-Zn oxide, where M is one selected from the group consisting of Al, Ga, Ge, Y, Zr, La, Ce, and Nd, and
wherein the oxide film has a lower atomic ratio of In to M than the oxide semiconductor film.
6. The semiconductor device according to claim 1 ,
wherein the oxide film is amorphous,
wherein the oxide semiconductor film is crystalline, and
wherein a c-axis of a crystal part included in the oxide semiconductor film is parallel to a normal vector of a surface of the oxide semiconductor film.
7. The semiconductor device according to claim 1 , further comprising a source electrode and a drain electrode which are in contact with the multilayer film.
8. The semiconductor device according to claim 7 , wherein a low-resistance region is provided in a region that is in the multilayer film and in the vicinity of an interface between the multilayer film and one of the source electrode and the drain electrode.
9. The semiconductor device according to claim 7 , further comprising a second oxide film having the same or different composition as the oxide film, wherein the second oxide film is provided over and in contact with a top surface of the source electrode, a top surface of the drain electrode, and a top surface of the multilayer film.
10. A semiconductor device comprising:
a gate electrode;
an oxide semiconductor film over the gate electrode; and
an oxide film over the oxide semiconductor film,
wherein the oxide film comprises an In—Ga—Zn oxide,
wherein a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film is smaller than a second angle between a bottom surface of the oxide film and a side surface of the oxide film, and
wherein the first angle is an acute angle.
11. The semiconductor device according to claim 10 , wherein the oxide semiconductor film comprises an In—Ga—Zn oxide.
12. The semiconductor device according to claim 10 ,
wherein the oxide semiconductor film comprises crystals whose c-axes are aligned in a direction perpendicular to a top surface of the oxide semiconductor film,
wherein a direction of a-axis of one of the crystals is different from a direction of a-axis of the other one of the crystals, and
wherein a direction of b-axis of one of the crystals is different from a direction of b-axis of the other one of the crystals.
13. A semiconductor device comprising:
a multilayer film in which an oxide semiconductor film and an oxide film are stacked;
a gate electrode; and
a gate insulating film,
wherein the multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween,
wherein the multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film,
wherein the first angle is an acute angle and smaller than the second angle,
wherein the oxide film includes a chemical element,
wherein the oxide semiconductor film includes the chemical element, and
wherein an energy of a bottom of a conduction band of the oxide film is closer to a vacuum level than an energy of a bottom of a conduction band of the oxide semiconductor film.
14. The semiconductor device according to claim 13 , wherein an upper edge of the oxide semiconductor film substantially coincides with a lower edge of the oxide film in the multilayer film.
15. The semiconductor device according to claim 13 , wherein the oxide film is stacked over the oxide semiconductor film in the multilayer film.
16. The semiconductor device according to claim 13 ,
wherein the oxide semiconductor film is stacked over the oxide film, and
wherein a second oxide film is stacked over the oxide semiconductor film.
17. The semiconductor device according to claim 13 , wherein the energy of the bottom of the conduction band of the oxide film is closer to the vacuum level than the energy of the bottom of the conduction band of the oxide semiconductor film by more than or equal to 0.05 eV and less than or equal to 2 eV.
18. The semiconductor device according to claim 13 ,
wherein each of the oxide semiconductor film and the oxide film includes an In-M-Zn oxide, where M is one selected from the group consisting of Al, Ga, Ge, Y, Zr, La, Ce, and Nd, and
wherein the oxide film has a lower atomic ratio of In to M than the oxide semiconductor film.
19. The semiconductor device according to claim 13 ,
wherein the oxide film is amorphous,
wherein the oxide semiconductor film is crystalline, and
wherein a c-axis of a crystal part included in the oxide semiconductor film is parallel to a normal vector of a surface of the oxide semiconductor film.
20. The semiconductor device according to claim 13 , further comprising a source electrode and a drain electrode which are in contact with the multilayer film.
21. The semiconductor device according to claim 20 , wherein a low-resistance region is provided in a region that is in the multilayer film and in the vicinity of an interface between the multilayer film and one of the source electrode and the drain electrode.
22. The semiconductor device according to claim 20 , further comprising a second oxide film having the same or different composition as the oxide film, wherein the second oxide film is provided over and in contact with a top surface of the source electrode, a top surface of the drain electrode, and a top surface of the multilayer film.