Phase-change memory
A phase-change memory element with side-wall contacts is disclosed, which has a bottom electrode. A non-metallic layer is formed on the electrode, exposing the periphery of the top surface of the electrode. A first electrical contact is on the non-metallic layer to connect the electrode. A dielectric layer is on and covering the first electrical contact. A second electrical contact is on the dielectric layer. An opening is to pass through the second electrical contact, the dielectric layer, and the first electrical contact and preferably separated from the electrode by the non-metallic layer. A phase-change material is to occupy one portion of the opening, wherein the first and second electrical contacts interface the phase-change material at the side-walls of the phase-change material. A second non-metallic layer may be formed on the second electrical contact. A top electrode contacts the top surface of the outstanding terminal of the second electrical contact.
1. A substrate, comprising:
a dielectric layer located between a first electrical contact and a second electrical contact;
an opening formed in the substrate and comprising one or more side-walls, wherein a side-wall of the one or more side-walls traverses the first electrical contact, the second electrical contact, and the dielectric layer; and
a phase-change material occupying at least a portion of the opening, wherein both the first electrical contact and the second electrical contact interface the phase-change material at one or more side-walls of the opening.
2. The substrate of claim 1 , wherein the first electrical contact interfaces the phase-change material at a first side-wall of the opening, and wherein the second electrical contact interfaces the phase-change material at a second side-wall of the opening.
3. The substrate of claim 1 , wherein the second electrical contact comprises:
a first end that is electrically coupled to a top electrode; and
a second end that is electrically coupled to the one or more side-walls of the opening.
4. The substrate of claim 3 , wherein the first electrical contact is electrically coupled to a bottom electrode.
5. The substrate of claim 4 , wherein the opening is separated from the bottom electrode by a non-metallic layer.
6. The substrate of claim 4 , wherein the opening is located between the top electrode and the bottom electrode.
7. The substrate of claim 3 , further comprising a non-metallic layer at least partially covering the second electrical contact and exposing a top surface of the first end to the top electrode.
8. The substrate of claim 7 , wherein the opening further traverses the non-metallic layer, wherein the phase-change material contacts the non-metallic layer, and wherein a surface of the phase-change material is lower than that of a surface of the non-metallic layer.
9. The substrate of claim 1 , wherein an isolating layer occupies a second portion of the opening and isolates the phase-change material from a top electrode.
10. The substrate of claim 9 , wherein the isolating layer comprises a dielectric material.
11. A substrate, comprising:
a dielectric layer located between a first electrical contact and a second electrical contact;
an opening formed in the substrate and comprising one or more side-walls, wherein a side-wall of the one or more side-walls at least partially passes through each of the first electrical contact, the second electrical contact, and the dielectric layer; and
a phase-change material occupying at least a portion of the opening, wherein both the first electrical contact and the second electrical contact are coupled to the phase-change material at one or more side-walls of the opening.
12. The substrate of claim 11 , wherein a profile of the phase-change material is U-shaped.
13. A substrate comprising:
a dielectric layer located between a first electrical contact and a second electrical contact;
an opening formed in the substrate and at least partially passing through each of the first electrical contact, the second electrical contact, and the dielectric layer;
a phase-change material occupying at least a portion of the opening, wherein both the first electrical contact and the second electrical contact are coupled to the phase-change material at one or more side-walls of the opening, and wherein a profile of the phase-change material occupying at least a portion of the opening is U-shaped;
a dielectric material formed within the U-shaped phase-change material; and
a top electrode formed on the dielectric material, wherein the second electrical contact is electrically coupled to the top electrode.
14. The substrate of claim 11 , wherein the first electrical contact is electrically coupled to a bottom electrode, and wherein the second electrical contact is electrically coupled to a top electrode.
15. The substrate of claim 14 , wherein the opening is separated from the bottom electrode by a non-metallic layer.
16. The substrate of claim 15 , wherein a portion of the non-metallic layer is located between the first electrical contact and the bottom electrode, and wherein the bottom electrode and the non-metallic layer create a ladder-like configuration.
17. The substrate of claim 15 , wherein the non-metallic layer comprises an etch stop material.
18. The substrate of claim 15 , wherein the non-metallic layer comprises a dielectric material.
19. The substrate of claim 11 , wherein the dielectric layer comprises an etch stop material.
20. The substrate of claim 11 , wherein the phase-change material comprises In, Ge, Sb, Te, Ga, Sn, or combinations thereof.
21. The substrate of claim 11 , wherein both the first electrical contact and the second electrical contact are coupled to the phase-change material at the side-wall.
22. The substrate of claim 11 , further comprising:
a dielectric material located on a top surface of the phase-change material.
23. The substrate of claim 1 , wherein both the first electrical contact and the second electrical contact interface the phase-change material at the side-wall.
24. The substrate of claim 1 , further comprising:
a top electrode formed on a dielectric material, wherein the second electrical contact is electrically coupled to the top electrode.
25. The substrate of claim 1 , further comprising:
a dielectric material in direct contact with a top surface of the phase-change material.
26. The substrate of claim 25 , wherein a profile of the phase-change material is U-shaped, and wherein the dielectric material is formed within the U-shaped phase-change material.
27. The substrate of claim 13 , wherein a side-wall of the opening at least partially passes through each of the first electrical contact, the second electrical contact, and the dielectric layer.
28. The substrate of claim 27 , wherein both the first electrical contact and the second electrical contact are coupled to the phase-change material at the side-wall.
29. The substrate of claim 13 , wherein the dielectric material is formed between the top electrode and a top surface of the phase-change material.