Bulk acoustic wave resonator comprising a boron nitride piezoelectric layer
A bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising boron nitride (BN); and a second electrode disposed over the first piezoelectric layer.
1. A bulk acoustic wave (RAW) resonator structure, comprising:
a first electrode disposed over a substrate;
a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising boron nitride (BN) comprising a wurtzite structure; and
a second electrode disposed over the piezoelectric layer.
2. The BAW resonator according to claim 1 , wherein the piezoelectric layer is doped with at least one element.
3. The RAW resonator according to claim 2 , wherein the at least one element comprises Aluminum (Al).
4. The BAW resonator according to claim 3 , wherein the at least one element is incorporated into a crystal lattice of the RN piezoelectric material.
5. The RAW resonator according to claim 3 , wherein a concentration of the Aluminum is in the range of approximately 0.0 weight percent to approximately 40 weight percent of the piezoelectric material.
6. The RAW resonator according to claim 2 , wherein the at least one element comprises Erbium (Er).
7. The RAW resonator according to claim 2 , wherein the at least one element comprises Scandium (Sc).
8. The RAW resonator according to claim 7 , wherein a concentration of the Scandium is in the range of approximately 1.0 atomic percent to approximately 40.0 atomic percent of the piezoelectric material.
9. The BAW resonator according to claim 2 , wherein the piezoelectric layer is provided using a plurality of targets formed of Boron and the at least one doping element, respectively, and sputtering the Boron and the at least one doping element from the corresponding targets over the bottom electrode using a plasma comprising nitrogen.
10. The RAW resonator according to claim 1 , wherein the piezoelectric layer is provided using a target formed of a compound comprising Boron and Nitrogen, and sputtering the Boron and Nitrogen from the target over the bottom electrode using a plasma.
11. The BAW resonator structure according to claim 1 , wherein the wurtzite structure is a wurtzite (0001) B4 structure, comprising: a hexagonal crystal structure with alternating layers of Boron (B) and Nitrogen (N); or a zinc blend structure comprising a symmetric structure of boron (B) and nitrogen (N) atoms.
12. A film bulk acoustic resonator (FBAR) structure, comprising:
a substrate defining a cavity;
a first electrode disposed over the substrate, at least a portion of the first electrode being formed over the cavity in the substrate;
a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising boron nitride (RN) comprising a wurtzite structure; and
a second electrode disposed over the piezoelectric layer.
13. The FBAR structure according to claim 12 , wherein the piezoelectric layer is doped with at least one element.
14. The FBAR structure according to claim 13 , wherein the at least one element comprises Aluminum (Al).
15. The FBAR structure according to claim 14 , wherein the at least one element is incorporated into a crystal lattice of the RN piezoelectric material.
16. The FBAR structure according to claim 13 , wherein the at least one element comprises Scandium (Sc).
17. The FBAR structure according to claim 13 , wherein the at least one element comprises Erbium (Er).
18. The FBAR structure according to claim 12 , wherein the wurtzite structure is a wurtzite (0001) B4 structure, comprising: a hexagonal crystal structure with alternating layers of Boron (B) and Nitrogen (N), and a zinc blend structure comprising a symmetric structure of boron (B) and nitrogen (N) atoms.
19. A solidly mounted resonator (SMR) structure, comprising:
a substrate;
an acoustic reflector formed on the substrate, the acoustic reflector comprising a plurality of acoustic impedance layers, wherein at least two of the acoustic impedance layers have different acoustic impedances;
a first electrode disposed over the acoustic reflector;
a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising boron nitride (BN) comprising a wurtzite structure; and
a second electrode disposed over the piezoelectric layer.
20. The SMR structure according to claim 19 , wherein the acoustic reflector comprises a distributed Bragg reflector (DBR).
21. The SMR structure according to claim 19 , wherein the piezoelectric layer is doped with at least one element.
22. The SMR structure according to claim 21 , wherein the at least one element comprises Aluminum (Al).
23. The SMR structure according to claim 21 , wherein the at least one element comprises Scandium (Sc).
24. The SMR structure according to claim 19 , wherein the wurtzite structure is a wurtzite (0001) B4 structure, comprising: a hexagonal crystal structure with alternating layers of Boron (B) and Nitrogen (N), and a zinc blend structure comprising a symmetric structure of boron (B) and nitrogen (N) atoms.
25. A bulk acoustic wave (BAW) resonator structure, comprising:
a first electrode disposed over a substrate;
a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising boron nitride (BN), wherein the piezoelectric layer is doped with at least one of Scandium Sc) or Erbium (Er); and
a second electrode, disposed over the piezoelectric layer.
26. The RAW resonator structure according to claim 25 , comprising a film bulk acoustic resonator (FBAR), the FBAR comprising: the substrate defining a cavity, wherein the first electrode is disposed over the substrate, at least a portion of the first electrode being formed over the cavity in the substrate.
27. The RAW resonator structure according to claim 25 , comprising a solidly mounted resonator (SMR), the SMR comprising: the substrate; an acoustic reflector formed in or on the substrate, the acoustic reflector comprising a plurality of acoustic impedance layers, wherein at least two of the acoustic impedance layers have different acoustic impedances.
28. The BAW resonator according to claim 25 , wherein a concentration of the Scandium is in the range of approximately 1.0 atomic percent to approximately 40.0 atomic percent of the piezoelectric material.
29. The RAW resonator according to claim 25 , wherein the piezoelectric layer is provided using a target formed of a compound comprising Boron and Nitrogen, and sputtering the Boron and Nitrogen from the target over the bottom electrode using a plasma.
30. The BAW resonator according to claim 25 , wherein the piezoelectric layer is provided using a plurality of targets formed of Boron and the at least one doping element, respectively, and sputtering the Boron and the at least one doping element from the corresponding targets over the bottom electrode using a plasma comprising nitrogen.