Nano-structure semiconductor light emitting device

1. A method of manufacturing a light emitting device having a plurality of nano-light emitting structures, comprising:

depositing a first conductivity-type semiconductor material on a substrate to form a base layer;

forming a mask having a plurality of openings on the base layer;

depositing the first conductivity-type nitride semiconductor material in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion;

depositing a current blocking layer on the tip portion of the nanocores;

removing a portion of the mask to expose the main portion of the nanocore;

depositing an active material layer on the plurality of nanocores; and

depositing a second conductivity-type nitride semiconductor layer on the active material layer.

2. The method according to claim 1 , further comprising depositing a contact electrode material on the second conductivity-type nitride semiconductor layers of the plurality of nano-light emitting structures to form a contact electrode.

3. The method according to claim 2 , further comprising forming a first electrode contacting the base layer; and

forming a second electrode contacting the contact electrode.

4. The method according to claim 3 , further comprising depositing an insulating layer on the contact electrode.

5. The method according to claim 1 , further comprising depositing a second current blocking layer between the active material layer and the second conductivity-type nitride semiconductor layer.

6. The method according to claim 1 , wherein the depositing the current blocking layer comprises depositing an undoped nitride or a nitride doped with a conductivity-type impurity opposite to that of the nanocore conductivity-type material.

7. The method according to claim 1 , wherein the forming the mask comprises forming a first mask layer and a second mask layer.

8. The method according to claim 7 , wherein the removing a portion of the mask comprises removing the second mask layer.

9. A method of manufacturing a light emitting device having a plurality of nano-light emitting structures, comprising:

depositing a first conductivity-type semiconductor material on a substrate to form a base layer;

forming a mask having a plurality of openings on the base layer;

depositing the first conductivity-type nitride semiconductor material in the openings of the mask to form a plurality of nanocores having a main portion and a tip portion;

removing a portion of the mask to expose the main portion of the nanocore;

depositing an active material layer on the plurality of nanocores;

depositing a current blocking layer on the active material layer; and

depositing a second conductivity-type nitride semiconductor layer on the current blocking layer.

10. The method according to claim 9 , further comprising depositing a contact electrode material on the second conductivity-type nitride semiconductor layers of the plurality of nano-light emitting structures to form a contact electrode.

11. The method according to claim 10 , further comprising forming a first electrode contacting the base layer; and

forming a second electrode contacting the contact electrode.

12. The method according to claim 11 , further comprising depositing an insulating layer on the contact electrode material.

13. The method according to claim 9 , wherein the depositing the current blocking layer comprises depositing an undoped nitride or a nitride doped with a conductivity-type impurity opposite to that of the nanocore on the active material layer.

14. The method according to claim 9 , wherein the forming the mask comprises forming a first mask layer and a second mask layer.

15. The method according to claim 14 , wherein the removing a portion of the mask comprises removing the second mask layer.

16. A method of manufacturing a light emitting device having a plurality of nano-light emitting structures, comprising:

depositing a first conductivity-type semiconductor material on a substrate to form a base layer;

depositing a first mask material on the base layer to form a first mask layer;

depositing a second mask material on the first mask layer to form a second mask layer, wherein the second mask layer has a different etching rate than the first mask layer;

forming a plurality of openings in the first mask layer and second mask layer exposing the base layer;

depositing first conductivity-type nitride semiconductor material in the openings of the mask to form a plurality of nanocores having a main portion bounded by the first and second masking layers and an exposed tip portion;

heat treating the nanocores at a temperature of 600° C. to 1200° C.;

depositing a current blocking layer overlying the plurality of nanocores;

removing the second masking layer to expose the main portion of the nanocore;

depositing an active material layer overlying the plurality of nanocores; and

depositing a second conductivity-type nitride semiconductor layer overlying the active material layer.

17. The method according to claim 16 , further comprising depositing a contact electrode material on the second conductivity-type nitride semiconductor layers of the plurality of nano-light emitting structures to form a contact electrode.

18. The method according to claim 17 , further comprising forming a first electrode contacting the base layer; and

forming a second electrode contacting the contact electrode.

19. The method according to claim 16 , wherein the blocking layer is formed between the plurality of nanocores and the active layer.

20. The method according to claim 16 , wherein the blocking layer is formed between the active layer and the second conductivity-type nitride semiconductor layer.