Method of processing a substrate and apparatus for performing the same
In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.
1. A method of processing a substrate, the method comprising:
generating a first plasma from a first reaction gas;
generating a second plasma from a second reaction gas;
extracting a first ingredient used for processing the substrate from ingredients in the first plasma;
extracting a second ingredient used for processing the substrate from ingredients in the second plasma; and
individually applying the first ingredient and the second ingredient to the substrate that is held in a processing chamber, wherein:
extracting the first ingredient from the first plasma includes flowing the first plasma through a first extracting hole defined in a shower head, the first extracting hole having a size that allows only the first ingredient from ingredients in the first plasma to pass therethrough,
extracting the second ingredient from the second plasma includes flowing the second plasma through a second extracting hole defined in the shower head, the second extracting hole having a size that allows only the second ingredient from ingredients in the second plasma to pass therethrough,
individually applying the first ingredient to the substrate includes injecting the first ingredient from the first extracting hole to the substrate that is held in the processing chamber,
individually applying the second ingredient to the substrate includes injecting the second ingredient from the second extracting hole to the substrate that is held in the processing chamber.
2. The method of claim 1 , wherein the generating a first plasma is performed under a first process recipe, and the generating a second plasma is performed under a second process recipe different from the first process recipe.
3. The method of claim 1 , wherein the first ingredient comprises a first radical for etching the substrate.
4. The method of claim 1 , wherein the second ingredient comprises a second radical for etching the substrate.
5. The method of claim 1 , further comprising:
generating ions used for processing the substrate from the extracted first ingredient and the extracted second ingredient.
6. The method of claim 5 , wherein the generating ions comprises applying a bias to the extracted first ingredient and the extracted second ingredient.
7. The method of claim 1 , further comprising:
generating a third plasma from a third reaction gas; and
applying the third plasma to the substrate independently from the first plasma and the second plasma.
8. The method of claim 7 , further comprising:
extracting a third ingredient used for processing the substrate from ingredients in the third plasma.
9. The method of claim 1 , wherein the first extracting hole is in direct fluid communication with the processing chamber, and wherein the second extracting hole is in direct fluid communication with the processing chamber.
10. A method of processing a substrate, the method comprising:
extracting a first radical from a first plasma introduced from a first remote plasma source;
extracting a second radical from a second plasma introduced from a second remote plasma source; and
individually applying the first radical and the second radical to the substrate that is held in a processing chamber, wherein:
extracting the first radical includes passing the first plasma through at least one first extracting hole defined in a first shower head that is connected to the first remote plasma source, the first shower head positioned at an upper inner space of the processing chamber,
extracting the second radical includes passing the second plasma through at least one second extracting hole defined in a second shower head that is connected to the second remote plasma source, the second shower head positioned at the upper inner space of the processing chamber and under the first shower head.
11. The method of claim 10 , further comprising:
generating ions used for processing the substrate by applying a bias to the first radical and the second radical.
12. The method of claim 10 , wherein the first radical and the second radical are different from each other.
13. The method of claim 10 , wherein:
individually applying the first radical to the substrate includes injecting the first radical from the at least one first extracting hole to the substrate that is held in the processing chamber,
individually applying the second radical to the substrate includes injecting the second radical from the at least one second extracting hole to the substrate that is held in the processing chamber.
14. The method of claim 10 , wherein the first shower head is directly connected to the first remote plasma source, and wherein the second shower head is directly connected to the second remote plasma source.
15. The method of claim 10 , wherein the at least one first extracting hole extends through the first and second showerheads, and wherein the at least one second extracting hole extends through the second showerhead but not the first showerhead.